• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1577-1587
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• 1994

TiO2 thin films with the substitution of oxygen with nitrogen were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) using Ti(OCH(CH3)2)4 (titanium tetraisopropoxide, TTIP) and N2O as source materials. X-ray diffraction (XRD) results indicated that the crystal structure of the deposited thin films was anatase TiO2 with only (101) plane observed at the deposition temperatures of 36$0^{\circ}C$ and 38$0^{\circ}C$, and with (101) and (200) plane at above 40$0^{\circ}C$. Raman spectroscopic results indicated that the crystal structure was anatase TiO2 in accordance with the XRD results without any rutile, fcc TiN, or hcp TiN structure. No fundamental difference was observed with temperature increase, but the peak intensity at 194.5 cm-1 increased with strong intensity at 143.0 cm-1 for all samples. The crystalline size of the films varied from 49.2 nm to 63.9 nm with increasing temperature as determined by slow-scan XRD experiments. The refractive index of the films increased from 2.40 to 2.55 as temperature increased. X-ray photoelectron spectroscopy (XPS) study showed only Ti 2s, Ti 2p, C 1s, O 1s and O 2s peaks at the surface of the film. The composition of the surface was estimated to be TiO1.98 from the quatitative analysis. In the bulk of the film Ti 2s, Ti 2p, O 1s, O 2s, N 1s and N 2s were detected, and Ti-N bonding was observed due to the substitution of oxygen with nitrogen. A satellite structure was observed in the Ti 2p due to the Ti-N bonding, and the composition of titanium nitride was determined to be about TiN1.0 from the position of the binding energy of Ti-N 2p3/2 and the quatitative analysis. The spectrum of Ti 2p energy level could be the sum of a 4, 5, or 6 Gaussian curve reconstruction, and the case of the sum of the 6 Gaussian curve reconstruction was physically most meaningful. From the results of Auger electron spectroscopy (AES), it was known that the composition was not varied significantly throughout the whole thickness of the film, and silicon oxide was not observed at the interface between the film and the substrate. The composition of the film was possible (TiO2)1-x.(TiN)x or TiO2-2xNx and in this experimental condition x was found to be about 0.21-0.16.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.17-21
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• 2007

Dense and periodic arrays of holes and Si nano dots were fabricated on silicon substrate. The nanopatterned holes were approximately $15{\sim}40nm$ wide, 40 nm deep and $40{\sim}80\;nm$ apart. To obtain nano-size patterns, self?assembling diblock copolymer were used to produce layer of hexagonaly ordered parallel cylinders of polymethylmethacrylate (PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS. $100\;{\AA}-thick$ Au thin film was deposited by using e-beam evaporator. PS template was removed by lift-off process. Arrays of Au nano dots were transferred by using Fluorine-based reactive ion etching(RE). Au nano dots were removed by sulfuric acid. Si nano dots size and height were $30{\sim}70\;nm$ and $10{\sim}20\;nm$ respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.486-493
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• 2003

Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{＋}$-GaN and AlGaN/AlGaN interlayer/ $n^{＋}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.155-163
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• 2011

Carbon nanotubes (CNT) have been attracted much attention since they have been expected to be used in various areas by virtue of their outstanding physical, electrical, and chemical properties. In order to make full use of their prominent electric conductivity in some areas such as electron emission sources, device interconnects, and electrodes in energy storage devices, direct growth of CNT with vertical alignment is definitely beneficial issue because they can maintain mechanical stability and high conductivity at the interface between substrates. Here, we report direct growth of vertically aligned CNT (VCNT) on Cu foils using thermal chemical vapor deposition and characterize the field emission property of the VCNT. The VCNT's height was controlled by changing the growth temperature, growth time, and catalytic layer thickness. Optimum growth condition was found to be $800^{\circ}C$ for 20 min with acetylene and hydrogen mixtures on Fe catalytic layer of 1 nm thick. The diameter of VCNT grown was smaller than that of usual multi walled CNT. Based on the result of field emission characterization, we concluded that the VCNT on Cu foils can be useful in various potential applications where high conductivity through the interface between CNT and substrate is required.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.497-502
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• 2003

Crystallographic characteristics and interfacial structures of $Al_2$$O_3$and $ZrO_2$dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the $Al_2$$O_3$film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the $ZrO_2$film crystallized during deposition at a low temperature of ∼$300^{\circ}C$ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X$ZrO_2$$O_3$and $ZrO_2$films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.

• Membrane Journal
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• v.30 no.2
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• pp.97-110
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• 2020

CO₂ capture and storage (CCS) is one of the promising technologies that can mitigate ever-growing emission of anthropogenic carbon dioxide and resultant climate change. Among them, chemical looping combustion (CLC) and calcium looping (CaL) are getting increasing attention recently as the prospective alternatives to the existing amine scrubbing. Both methods use metal oxides in the process and consist of cyclic reactions. Yet, due to their cyclic nature, they both need to resolve sintering-induced cyclic stability deterioration. Moreover, the structure of the metal oxides needs to be optimized to enhance the overall performance of CO₂ capture and storage. Deposition of thin film coating on the metal oxide is another way to get rid of wear and tear during the sintering process. Chemical vapor deposition or atomic layer deposition are the well-known, established methods to form thin film membranes, which will be discussed in this review. Various effective recent developments on structural modification of metal oxide and incorporation of stabilizers for cyclic stability are also discussed.

• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.258-265
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• 1992

A low loss optical waveguide of $P_{2}O_{5}-SiO_{2}$on Si substrate is produced by using the chemical vapour deposition method of $SiO_2$ thin films used in Si technology. Propagation loss of the waveguide layer was 1.65 dB/cm as produced and reduced down to 0.1 dB/cm after heat treatment at $1100^{\circ}C$. By using laser lithography and reactive ion etching method $P_{2}O_{5}-SiO_{2}$ waveguide was produced and subsequently annealed at $1100^{\circ}C$.As a result of this annealing the shape of the waveguide core was changed from rectangular to semi-circular form, and the propagation loss was reduced as down to 0.03 dB/cm at 0.6328$\mu$m and 0.04dB/cm at 1.53$\mu$m. We think that the mechanism of the reduction in propagation loss during the heat treatment is the following: 1) The hydrogen bonding in waveguide layer, which causes absorption loss, is dissociated and diffused out. 2) The roughness of the interface and the micro-structure of the waveguide layer is removed. 3) The irregularities in the cross-sectional shape of the waveguide which was induced during the lithographic process were disappeared by flowing of the waveguide core.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.252-257
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• 2005

A high-brightness electron beam source for a microfocus X-ray tube has been fabricated using a carbon-nanotube (CNT) field emitter. The electron source consists of cathode that includes a CNT field emitter, a beam-extracting grid, and an anode that accelerates that electron beam. The microfocus X-ray tube requires an electron beam with the diameter of less than 5 $\mu$m and beam current of higher than 30 $\mu$A at the position of the X-ray target. To satisfy the requirements, the geometries of the field emitter tips and the electrodes of the gun was optimized by calculating the electron trajectories and beam spatial profile with EGUN code. The CNT tips were fabricated with successive steps: a tungsten wire with the diameter of 200 $\mu$m was chemically etched and was subsequently coated with CNTs by chemical vapor deposition. The experiments of electron emission at the fabricated CNT tips were performed. The design characteristics and basic experimental results of the electron source are reported.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.699-704
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• 2018

One-dimensional nanostructures have attracted increasing attention because of their unique electronic, optical, optoelectrical, and electrochemical properties on account of their large surface-to-volume ratio and quantum confinement effect. Vertically grown nanowires have a large surface-to-volume ratio. The vapor-liquid-solid (VLS) process has attracted considerable attention for its self-alignment capability during the growth of nanostructures. In this study, vertically aligned silicon oxide nano-pillars were grown on Si\$SiO_2$(300 nm)\Pt substrates using two-zone thermal chemical vapor deposition system via the VLS process. The morphology and crystallographic properties of the grown silicon oxide nano-pillars were investigated by field emission scanning electron microscopy and transmission electron microscopy. The diameter and length of the grown silicon oxide nano-pillars were found to be dependent on the catalyst films. The body of the silicon oxide nano-pillars exhibited an amorphous phase, which is consisted with Si and O. The head of the silicon oxide nano-pillars was a crystalline phase, which is consisted with Si, O, Pt, and Ti. The vertical alignment of the silicon oxide nano-pillars was attributed to the preferred crystalline orientation of the catalyst Pt/Ti alloy. The vertically aligned silicon oxide nano-pillars are expected to be applied as a functional nano-material.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.123-123
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• 2010

3족 질화물계 물질은 발광다이오드와 같은 광전자소자적용에 있어서 매우 우수한물 질이다.일반적으로, GaN 에피 성장에 있어서 저온 중간층을 삽입한 2 단계 성장 방법은 낮은 결함밀도와 균일한 표면을 얻기 위해 도입된 기술이다. 특히 AlN 중간층은 GaN 중간층과 비교하였을 때 결정성뿐만 아니라 높은 온도에서의 열적안정성, GaN 기반의 자외선 검출기서의빛 흡수 감소 등의 장점을 가지고 있다. 또한 패턴 사파이어 기판위 GaN 에피 성장은 측면성장 효과를 통해 결함 밀도 감소와 광 추출 효율을 향상시키는 것으로 알려져 있다.또한 열응력으로 인한 기판의 휨 현상은 박막성장중 기판의 온도 분포를 불균일하게 만드는 원인이 되며 이는 결국 박막 조성 및 결정성의 열화를 유도하게 되고 최종적으로 소자특성을 떨어 뜨리는 원인이 되는데 AlN 중간층의 도입으로 이것을 완화시킬 수 있는 효과가 있다. 하지만, AlN 중간층이 패턴된 기판 위에 성장시킨 GaN 에피층에 미치는 영향은 명확하지 않다. 본 연구팀은 일반적인 c-plane 사파이어 기판과 플라즈마 건식 에칭을 통한 렌즈 모양의 패턴된 사파이어 기판을 이용해서 AlN 중간층과 GaN 에피층을 유기금속 화학기상증착법으로 성장하였다. 특히, 렌즈 모양의 패턴된 사파이어 기판은 패턴 모양과 패턴 밀도가 성장에 미치는 영향을 연구하기 위해 두가지 패턴의 사파이어 기판을 이용하였다. AlN 중간층 두께를 조절함으로써 최적화된 GaN 에피층을 90분까지 4단계로 시간 변화를 주어 성장 양상을 관찰한 결과, GaN 에피박막의 성장은 패턴 기판의 trench 부분에서 시작하여 기판의 패턴부분을 덮는 측면 성장을 보이고있다. 또한 TEM과 CL을 통해 GaN 에피박막의 관통 전위를 분석해 본 결과 측면 성장과정에서 성장 방향을 따라 옆으로 휘게 됨으로 표면까지 도달하는 결정결함의 수가 획기적으로 줄어드는 것을 확인함으로써 고품질의 GaN 에피층을 성장시킬 수 있었다. 그리고 패턴밀도가 높고 모양이 볼록할수록 측면 성장 효과로 인한 결정성 향상과 난반사 증가를 통한 임계각 증가로 광추출 효율이 향상 되는 것을 확인할 수 있었다. 이러한 결과를 바탕으로 최적화된 AlN 중간층을 이용하여 패턴 기판위에서 고품질의 GaN 에피층을 성장시킬 수 있었다.