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http://dx.doi.org/10.3740/MRSK.2003.13.8.497

Crystallographic and Interfacial Characterization of Al2O3 and ZrO2 Dielectric Films Prepared by Atomic Layer Chemical Vapor Deposition on the Si Substrate  

Kim, Joong-Jung (Memory R&D Division, Hynix Semiconductor Inc.)
Yang, Jun-Mo (Memory R&D Division, Hynix Semiconductor Inc.)
Lim, Kwan-Yong (Memory R&D Division, Hynix Semiconductor Inc.)
Cho, Heung-Jae (Memory R&D Division, Hynix Semiconductor Inc.)
Kim, Won (Memory R&D Division, Hynix Semiconductor Inc.)
Park, Ju-Chul (Memory R&D Division, Hynix Semiconductor Inc.)
Lee, Soun-Young (Memory R&D Division, Hynix Semiconductor Inc.)
Kim, Jeong-Sun (Technology and Research Center -5 -5, Agency for Defense Development)
Kim, Geun-Hong (Technology and Research Center -5 -5, Agency for Defense Development)
Park, Dae-Gyu (IBM Microelectronics, Semiconductor R&D Center)
Publication Information
Korean Journal of Materials Research / v.13, no.8, 2003 , pp. 497-502 More about this Journal
Abstract
Crystallographic characteristics and interfacial structures of $Al_2$$O_3$and $ZrO_2$dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the $Al_2$$O_3$film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the $ZrO_2$film crystallized during deposition at a low temperature of ∼$300^{\circ}C$ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X$ZrO_2$$O_3$and $ZrO_2$films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.
Keywords
crystallographic characteristic; interfacial structure; ${Al_2}{O_3}$and $ZrO_2$dielectric films; atomic layer chemical vapor deposition; phase identification;
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