• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.63-67
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• 2016

In this paper, we present an indirect method of elastic modulus measurement for various lamination layers formed on polymer-based compliant substrates. Although the elastic modulus of every component is crucial for mechanically reliable microelectronic devices, it is difficult to accurately measure the film properties because the lamination layers are hardly detached from the substrate. In order to resolve the problem, 3-point bending test is conducted with a film-substrate specimen and area transformation rule is applied to the cross-sectional area of the film region. With known substrate modulus, a modulus ratio between the film and the substrate is calculated using bending stiffness of the multilayered specimen obtained from the 3-point bending test. This method is verified using electroplated copper specimens with two types of film-substrate structure; double-sided film and single sided film. Also, common dielectric layers, prepreg (PPG) and dry film solder resist (DF SR), are measured with the double-sided specimen type. The results of copper (110.3 GPa), PPG (22.3 GPa), DF SR (5.0 GPa) were measured with high precision.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.87-96
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• 2004

Polymer/ceramic composites are the most promising embedded capacitor material for organic substrates application. Predicting the effective dielectric constant of polymer/ceramic composites is very important for design of composite materials. In this paper, we measured the dielectric constant of epoxy/$BaTiO_3$ composite embedded capacitor films with various $BaTiO_3$ particles loading for 5 different sizes $BaTiO_3$ powders. Experimental data were fitted to several theoretical equations to find the equation useful for the prediction of the effective dielectric constant of polymer/ceramic composites and also to estimate the dielectric constant of $BaTiO_3$ powders. The Lichtenecker equation and the Jayasundere-Smith equation were useful for the prediction of the effective dielectric constant of epoxy/$BaTiO_3$ composites. And calculated dielectric constants of the $BaTiO_3$ powders were in the range of 100 to 600, which were lower than those of $BaTiO_3$ bulk ceramics.

• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.622-627
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• 2009

Using an alkali-solution developable photosensitive resin and a carbon black as a conductive filler, photo-patternable pastes for polymer thick film resistor were fabricated and evaluated. A photo solder resist (PSR), which is usually used as protecting layer of printed circuit board (PCB), was used as a photosensitive resin so that ultraviolet exposure and alkali-aqueous solution development of paste were possible. After fabricating the photosensitive polymer resistor paste, the electrical properties of thick film resistors were measured using PCB test boards. Sheet resistance was decreased with increasing amount of carbon black, but the developability was limited in excess loading of carbon black. The sheet resistance was also reduced by re-curing and the change rate was smaller in higher carbon black loading. Moreover, finely patterned meander-type thick film resistors were fabricated using photo-process and large resistance up to several tens of sheet resistance could be obtained in small area by this technique.

• Korean Journal of Optics and Photonics
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• v.19 no.3
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• pp.224-228
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• 2008

A highly sensitive integrated photonic temperature sensor was proposed and developed incorporating a polymeric microring resonator. The change in the ambient temperature was estimated by observing the shift in the resonant wavelength of the resonator induced via the thermooptic effect. For the purpose of enhancing its sensitivity, the sensor was built by implementing a polymeric resonator exhibiting a high thermooptic coefficient on a silicon substrate with a small coefficient of thermal expansion. For the range of from $20^{\circ}C$ to $30^{\circ}C$ near the room temperature, the fabricated sensor yielded a sensitivity of as high as 165 ${\pm}/^{\circ}C$ and a resolution of better than $0.1^{\circ}C$. And its performance was found to be hardly affected by the variation in the refractive index of the target analyte, which was applied to the surface of the sensor. It is hence expected that the sensor could be integrated with other refractormetric optical sensors, thereby compensating for the fatal error caused by the change in the ambient temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.303-310
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• 2008

We fabricated hydrogenated amorphous silicon(a-Si:H) 140 nm thick film on a $180\;nm-SiO_2/Si$ substrate with an inductively-coupled plasma chemical vapor deposition(ICP-CVD) equipment at $250^{\circ}C$. Moreover, 30 nm-Ni film was deposited with a thermal-evaporator sequently. Then the film stack was annealed to induce silicides by a rapid thermal annealer(RTA) at $200{\sim}500^{\circ}C$ in every $50^{\circ}C$ for 30 minuets. We employed a four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), and scanning probe microscope(SPM) in order to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure evolution, and surface roughness, respectively. We confirmed that nano-thick high resistive $Ni_3Si$, mid-resistive $Ni_2Si$, and low resistive NiSi phases were stable at the temperature of <300, $350{\sim}450^{\circ}C$, and >$450^{\circ}C$, respectively. Through SPM analysis, we confirmed the surface roughness of nickel silicide was below 12 nm, which implied that it was superior over employing the glass and polymer substrates.

• Journal of the Korean Applied Science and Technology
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• v.32 no.2
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• pp.232-239
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• 2015

In this paper, we study the dry transfer technology utilizing PDMS (Polydimethylsiloxane) stamp of a large single-layer graphene grown on Cu-foil as catalytic metal by using Chemical Vapor Deposition (CVD). By changing the surface property of the target substrate through $UV/O_3$ treatment, we can transfer the graphene on the target substrate while minimizing mechanical damages of graphene layer. Multi-layer (1~4 layers) graphene was stacked on $SiO_2/Si$ wafer successfully by repeating thetransfer method/process and then optical transmittance and sheet resistance of graphene layers have been measured as a quality assessment.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.508-508
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• 2011

스퍼터링을 이용한 박막 증착기술은 다양한 분야에 걸쳐 적용되어 왔으며, 스퍼터링 타겟 사용효율을 향상시키기 위해 마그네트론 구조 최적화 및 이온 소스 적용 스퍼터링 등의 기술이 연구되어 왔다. 또한 인듐과 같은 희토류 금속의 가격이 최근 상승함에 따라 고효율 스퍼터링기술의 필요성은 더욱 증대되었다. 본 연구에서는 고밀도 플라즈마 소스를 적용한 고효율 스퍼터링 공정을 개발하였다. 동공 음극방전에서 생성된 고밀도 플라즈마는 전자석 코일을 통해 형성된 자기장을 따라 스퍼터링 타겟 표면까지 수송되며, 음전위로 대전된 스퍼터링 타겟 표면에서는 가속되어 입사하는 이온에 의한 스퍼터링이 발생한다. 본 스퍼터링 공정 기술의 경우, 기존 마그네트론 스퍼터링 소스에서 나타나는 약 30%의 타겟 사용 효율을 뛰어넘는 약 80% 이상의 타겟 사용률을 보였다. 또한 고밀도 플라즈마 소스에서 공급되는 이온에 의한 스퍼터링 공정을 개발 함에 따라 스퍼터링 방전전압의 독립적 조절이 가능하다. 이에 따라 200 V 이하의 저전압 스퍼터링 공정을 통해 유연성 폴리머 기판 및 유기소자 상 저에너지 이온 증착이 가능하며, 1 kV 이상의 고전압 스퍼터링을 통해 추가적인 기판 전압 인가 없이 박막 치밀화 구현이 가능하다.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.399-407
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• 1998

본 연구에서는 LCD패키지용 이방성 전도 필름의 전기적, 기계적 특성 및 신뢰성에 미치는 접속 변수의 영향을 연구하였다. 이방성 전도 필름을 통한 전기적 전도 현상을 각각의 도전 입자와 기판 사이의 기계적 접촉에 의해 접촉 방향으로만 전류가 흐르게 되는 것이 주되는 전도 기구이다. 따라서 접속 압력에 따라 각각의 도전 입자의 변형으로 기판 사이의 접촉 면적이 변하는데 이방성 전도필름의 접촉 저항은 이런 접촉 변화에 의해 결정된다. 접속 압력에 따라 초기에 접촉 저항은 감소하다가 점차 접촉 저항기가 안정화되는 거동을 보였다. 그러나 높은 접속 압력에서는 오히려 저항치가 약간 증가함을 보였다. 이방성 전도 필름 접속의 접착력을 평가하기 위해 필 테스트(peel test)를 시행하였는데, 접속 압력과 접속 온도를 증가 시킬수록 이방성 전도 필름 접속의 접착력을 평가하기 위해 고온 시효 시험, 온도 사이클링 시험, 고온 고습 시험의 신뢰성 시험을 시행하였으며, 이중 고온 고습 시험이 ACF접속의 전기적, 기계적 특성에 가장 악영향을 주었다. 또 큰 압력으로 접속된 것보다 작은 압력으로 접속되었을 때, 그리고 도전입자로는 금속 코팅 된 폴리머 입자가 사용될 때 신뢰성이 상대적으로 좋은 것을 발견했다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.12
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• pp.1857-1863
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• 2010

We present the fabrication and characterization of transparent carbon nanotube film (CNF) piezoresistors. CNFs were fabricated by vacuum filtration methods with 65?92% transmittance and patterned on Au-deposited silicon wafer by photolithography and dry etching. The patterned CNFs were transferred onto poly-dimethysiloxane (PDMS) using the weak adhesion property between the silicon wafer and the Au layer. The transferred CNFs were confirmed to be piezoresistors using the equation of concentrated-force-derived resistance change. The gauge factor of the CNFs was measured to range from 10 to 20 as the resistance of the CNFs increased with applied pressure. In polymer microelectromechanical systems, CNF piezoresistors are the promising materials because of their high sensitivity and low-temperature process.

• Polymer(Korea)
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• v.31 no.6
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• pp.526-531
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• 2007

This paper reports the first results of a series of planarization film study for the stainless steel (SS) substrates for flexible displays. Diglycidyl ether of bisphenol A (DGEBA) and octa(dimethylsiloxypropylglycidylether) silsesquioxane (OG) were chosen for the organic and the hybrid epoxies respectively and diaminodiphenylmethane (DDM) was used as a curing agent at 1:2 stoichiometric ratio. These materials were spin-coated on SS substrates and thermal-cured. TGA study indicated that both the pristine and the cured OG were more thermally stable than DGEBA. AFM study showed that the smooth surfaces of $1{\sim}2\;nm$ roughness can be prepared for both DGEBA and OG when the films were thick ($>\;1\;{\mu}$). The electrical properties such as dielectric constant, capacitance and the leakage current with respect to the applied voltage were all stable even after the stress of $100\;V/100^{\circ}C$ was applied for $0{\sim}10000$ seconds indicating that the insulating properties of DGEBA and OG films were very reliable.