• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.214-218
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• 1994

$Y_{3}Fe_{5}O_{12}$ based garnet films(thin or thick) offer a great promise for the application of microwave communication components. We investigated the magnetic and crystallographic preperties of $Y_{3}Fe_{5}O_{12}$ thick films prepared by KrF eximer laser ablation of a stoichiometric garnet target. It was possible to obtain almost epitaxially oriented films on $Al_{2}O_{3}$(1102) plane. Although the crystalline quality depends on substrate temperature and $O_{2}$ partial pressure used($Po_{2}$), 4.1m thick films of $4{\pi}M_{s}=1300$ Gauss and $H_{c}=37.5$ Oe were obtained at the substrate temperature of $700^{\circ}C$ with the $Po_{2}$ of 100 mTorr after annealing the as-deposited films at $700^{\circ}C$ for 2 hours. These films are expected to be used for magnetostatic spin wave filters at narrow bandwidth frequency.

• Proceedings of the Korea Concrete Institute Conference
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• 2008.04a
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• pp.989-992
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• 2008

In this paper, we are presenting a case that integrates ultra high strength concrete(150MPa) with surface-exposed concrete. Ahead of the field application, we carried out laboratory experiment and B/P Test for a basic property of concrete(slump flow, air content, 50cm flow time, elapse time change and compression strength) and productivity. The next, we conducted Mock-up Test using simulation specimen to evaluate infilling, surface-finishing and hydration heat of concrete. We had satisfactory results for a basic property and hydration heat of concrete. However at the time of field application, it was occurred rupture of formwork because of high lateral pressure of concrete, and then formwork was reinforced and case-in-place time was adjusted. And regardless of low and high frequency vibration, it occurred to surface-pockmark. In case that applies ultra high strength concrete to surface-exposed concrete, we estimate that it is important of systematic management and improvement of construction.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.12 no.1
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• pp.19-26
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• 1987

The broadband microwave amplifier in the 3~4GHz frequency range has been designed by using potentially unstable GaAs FET. Input matching network is designed by 14dB available power gain circles which are in the stable region. In order to obtain maximu, transducer power gain, output matching network which is in the stable region can be designed using Fano's bandpass matching network. The measured values of transducer power gain, $S_11$and $S_22$ show close agreements with the theoretical valuse.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.5
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• pp.1-8
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• 1976

Microwave GaAs Metal Semiconductor Field effect Transistors (MESFET) with the gate-length of two micrometers are investigated. The scattering parameters of the transistors have been measured from 1GHz to 2GHz by Hp8545 Automatic network analyzer. From the measured data, an equivalent circuit is established which consists of an ntrinsic and. extrinsic transistor elements. In this paper, GaAb MESFET Amplifier is used in conjunction with conventional microstrip techniques to match into a 50 ohms high input/output impedances system. We found that Power gain is less than 8dB and VSWR is less than 1.5 in L-Band.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.11 no.5
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• pp.97-102
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• 2012

In this paper, each electrical length and harmonics of the multi-stage SIR are calculated by using the input impedance for the variable application of SIR in the microwave systems. The size reduced ratio of the SIR is slightly reduced as increasing of the number of stage. The impedance ratio between lower and higher impedance of the SIR has the dominant effect on the size reduced ratio and harmonic characteristics. Also the equivalent impedance of the SIR is a geometric mean between lower and higher impedance and the quality factor of the SIR is similar to the half-wavelength resonator's.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.4
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• pp.249-257
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• 2000

In this paper, we propose the use of stochastic finite element method, that is popularly employed in mechanical structure analysis, for more practical designing purpose of RF device. The proposed method is formulated based on the vector finite element method cooperated by pertubation analysis. The method utilizes sensitivity analysis algorithm with covariance matrix of the random variables that represent for uncertain physical quantities such as length or various electrical constants to compute the probabilities of the measure of performance of the structure. For this computation one need to know the variance and covariance of the random variables that might be determined by practical experiences. The presenting algorithm has been verified by analyzing several device with different be determined by practical experiences. The presenting algorithm has been verified by analysis several device with different measure of performanes. For the convenience of formulation, two dimensional analysis has been performed to apply it into waveguide with dielectric slab. In the problem the dielectric constant of the dielectric slab is considered as random variable. Another example is matched waveguide and cavity problem. In the problem, the dimension of them are assumed to be as random variables and the expectations and variances of quality factor have been computed.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.8
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• pp.1263-1268
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• 2008

In this paper, the low noise power amplifier for GaAs FET ATF-10136 is designed and fabricated with active bias circuit and self bias circuit. To supply most suitable voltage and current, active bias circuit is designed. Active biasing offers the advantage that variations in the pinch-off voltage($V_p$) and saturated drain current($I_{DSS}$) will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets a gate-source voltage($V_{gs}$) for the desired drain voltage and drain current. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA, suitable for input stage matching and gate source bias. The LNA is fabricated on FR-4 substrate with active and self bias circuit, and integrated in aluminum housing. As a results, the characteristics of the active and self bias circuit LNA implemented more than 13 dB and 14 dB in gain, lower than 1 dB and 1.1 dB in noise figure, 1.7 and 1.8 input VSWR at normalized frequency $1.4{\sim}1.6$, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.2
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• pp.127-132
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• 2003

This paper presents a new model that can precisely simulate the attenuation characteristics of the voltage-controlled PIN diode attenuators. After carefully investigating the problems in the conventional PIN diode models, a new PIN diode model was proposed and verified with experimental data. The proposed model is well operated when it is used in the voltage-controlled mode as well as current-controlled mode, and is simple and straightforward model, since the PN junction diode of this model has the same curve as that of the PIN diode. This model is very effective to design voltage-controlled attenuator and its implementation in commercial simulators is simple and accurate. This model will allow RF and Microwave designers to better use the PIN diodes in various circuits.

• Journal of Navigation and Port Research
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• v.32 no.5
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• pp.363-368
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• 2008

This paper presents a miniaturization design technique of radio frequency identification (RFID) tag antenna operated in 910 MHz band. Miniaturization structure design for a tag antenna is performed by structure application of the folded dipole and meander line. In order to realize the maximum power transmission, imaginary part of a chip impedance and a tag antenna impedance is matched by complex conjugate number. The optimized tag antenna size is $50\;nm\;{\times}\;40\;nm\;{\times}\;1.6\;nm$ and its size is reduced about 62 % comparison with antenna size of reference [4]. The measured results of fabricated tag antenna are confirmed the reasonable agreement with prediction. The read range of the tag antenna with chip observed about 5 m.

• Journal of the Korean Society of Radiology
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• v.3 no.2
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• pp.17-21
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• 2009

The thermal treatment have been combined with MRI which is able to acquire both an anatomical image with high-contrast and a thermal image, and have recently used for removing the tumor effectively. This study is to make a patch antenna which is designed to operate at 2.45GHz that has compatibility with MRI. The characteristic and specific absorption rate(SAR) were confirmed using computer simulation and confirmed a possibility of hyperthermia by performing experiment.