• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.143-152
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• 2004

A novel low-power wideband bipolar second-generation current conveyors(CCIIs) and its application to universal instrumentation amplifier(UIA) were proposed. The CCII for accuracy voltage or current transfer characteristics and low current input impedance adopted adaptive current bias circuit into conventional class Ab CCII. The UIA consists of only two CCIIs and four resistors. Three instrumentation function of the UIA can be realized by selection of input signals and resistors. The simulation results show that the CCII has input impedance of 2.0$\Omega$ and the voltage gain of 60㏈ for frequency range from 0 to 50KHz when used as a voltage amplifier. The CCII has also good characteristics of current follower for current range from -100㎃ to ＋100㎃. The simulation results show that the UIA has three instrumentation amplifier functions without resistor matching. The UIA has the voltage gain of 40㏈ for frequency range from 0 to 100KHz when used as a fully-differential instrumentation amplifier. The power dissipations of the CCII and the UIA are 0.75㎽ and 1.5㎽ at supply voltage of $\pm$2.5V, respectively.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.289-292
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• 2001

A Novel fully-differential bipolar current-controlled current amplifier(CCCA) for electrically tunable circuit design at current-mode signal processing were designed. The CCCA was consisted of fully-differential subtracter and fully-differential current gain amplifier. The simulation result shows that the CCCA has current input impedance of 0.5 Ω and a good linearity. The CCCA has 3-dB cutoff frequency of 20 MHz for the range over bias current 100$mutextrm{A}$ to 20 ㎃. The power dissipation is 3 mW.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.9
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• pp.13-19
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• 1999

This paper describes a design of an 8-bit 100KSPS 1mW CMOS A/D Converter. Using a novel systematic offset cancellation technique, we reduce the systematic offset voltage of operational amplifiers. Further, a new Gain amplifier is proposed. The proposed A/D Converter is fabricated with a $0.6{\mu}m$ single-poly triple-metal n-well CMOS technology. INL and DNL is within ${\pm}1LSB$, and SNR is about 43dB at the sampling frequency of 100KHz. The power consumption is $980{\mu}W$ at +3V power supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.358-365
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• 2008

A differential-gain-controlled LNA is designed and implemented in 0.18 um CMOS technology for $3.1{\sim}4.8GHz$ UWB system. In high gain mode, measurements show a differential power gain of $14.1{\sim}15.8dB,\;13.3{\sim}15dB$, respectably, an input return loss higher then 10dB, an input IP3 of -19.3 dBm, a noise figure of $4.85{\sim}5.09dB$, while consuming only 19.8 mW of power from a 1.8V DC supply. In low gain mode, measurements show a differential power gain of $-6.1{\sim}-4.2dB,\;-7.6{\sim}-5.6dB$, respectably, an input return loss higher then 10dB, an input IP3 of -1.45 dBm, a noise figure of $8.8{\sim}10.3dB$, while consuming only 5.4mW of power from a 1.8V DC supply.

• The KIPS Transactions:PartA
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• v.12A no.6 s.96
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• pp.531-538
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• 2005

In the high performance Analog Information Processing Systems(AIPS), gain boosting or additional gain stage is required when the gain is not sufficient with one stage amplification. This work shows that high gain is neatly obtained by enhancing the gain using the negative resistance element. Compared to the conventional techniques, the proposed scheme enjoys full output swing, small circuit area and power consumption, and the applications to various configurations of amplifiers. The negative resistance element is placed between the differential output nodes when used in the Op-Amp. The HSPICE simulation indicates that enhancement of more than 40 dB is readily obtained in this simple configuration when the negative resistance element is implemented in the form of cross-coupled CMOS inverters.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.5
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• pp.777-784
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• 2023

A sense amplifier is an essential peripheral circuit for designing a memory and is used to sense a small differential input signal and amplify it into digital signal. In this paper, a high-speed sense amplifier applicable to in-memory computing circuits is proposed. The proposed circuit reduces sense delay time through transistor Mtail that provides an additional discharge path and improves the circuit performance of the sense amplifier by applying m-GDI (: modified Gate Diffusion Input). Compared with previous structure, the sense delay time was reduced by 16.82%, the PDP(: Power Delay Product) by 17.23%, the EDP(: Energy Delay Product) by 31.1%. The proposed circuit was implemented using TSMC's 65nm CMOS process, while its feasibility was verified through SPECTRE simulation in this study.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.423-424
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• 2011

This paper has proposed a 920 MHz RF front-end for IEEE 802.15.4g SUN (Smart Utility Network) systems. The proposed 920 MHz RF front-end consists of a driver amplifier, a low noise amplifier, and a RF switch. In the TX mode, the driver amplifier has been designed as a single-ended topology to remove a transformer which causes a loss of the output power from the driver amplifier. In addition, a RF switch is located in the RX path not the TX path. In the RX mode, the proposed low noise amplifier can provide a differential output signal when a single-ended input signal has been applied to. A LC resonant circuit is used as both a load of the drive amplifier and a input matching circuit of the low noise amplifier, reducing the chip area. The proposed 920 MHz RF Front-end has been implemented in a 0.18-um CMOS technology. It consumes 3.6 mA in driver amplifier and 3.1 mA in low noise amplifier from a 1.8 V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.86-93
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• 2008

A low-power, low-noise, highly-linear hybrid balun circuit is proposed for 2.4-GHz fully differential CMOS direct conversion receivers. The hybrid balun is composed of a passive transformer and loss-compensating auxiliary amplifiers. Design issues regarding the optimal signal splitting and coupling between the transformer and compensating amplifiers are discussed. Implemented in $0.18{\mu}m$ CMOS process, the 2.4 GHz hybrid balun achieves 2.8 dB higher gain and 1.9 dB lower noise figure than its passive counterpart and +23 dBm of IIP3 only at a current consumption of 0.67 mA from 1.2 V supply. It is also examined that the hybrid balun can remarkably lower the total noise figure of a 2.4 GHz fully differential RF receiver only at a cost of 0.82 mW additional power dissipation.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.4 s.310
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• pp.53-59
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• 2006

This paper describes the new design technique of full wave rectifier (FWR) for precise measurement instrument and the chip implementation of this FWR circuit with measurement results. Conventional circuits have some problems of complex design and limited output range( $VDD/2{\sim}VLIIV1IT+$). Proposed FWR circuit was simply designed with two 2x1 MUXs, one high speed comparator, and one differential difference amplifier(DDA). One rail-to-rail differential difference amplifier(DDA) performs the DC level shifting to VSS and 2X amplification simultaneously, and enables the full range ($Vss{\sim}VDD$) operation. The proposed FWR circuits shows more than 50% reduction of chip area and power consumption compared to conventional one. Proposed circuit was implemented with 0.35um 1-poly 2-metal CMOS process. Core size is $150um{\times}450um$ and power dissipation is 840uW with 3.3V single supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.16-21
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• 2007

CMOS variable gain amplifier (VGA) IC designs for the structure monitoring systems of the telemetries were developed. A three stage cascaded VGA using a differential amplifier and a linear-in-dB controller is presented. A proposed VGA is a modified version of a conventional VGA such that the gain is controlled in a linear-in-dB fashion through the current ratio. The proposed VGA circuit introduced in this paper has a dynamic range of 77 dB with 1.5 dB gain steps. It also achieved a gain error of less than 1.5 dB over 77 dB gain range. The VGA can operate up to 10MHz dissipating 13.8 mW from a single 1.8 V supply. The core area of the VGA fabricated in a Magnachip $0.18{\mu}m$ standard CMOS process was about $430{\mu}m{\times}350{\mu}m$. According to measurement results, we can verify that the proposed method is reasonable with regard to the enhancement of dynamic range and the better linear-in-dB characteristics.