• Title/Summary/Keyword: 전달 게이트

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A Study on the Rice growing water-management System based on IoT (IoT 기반 벼농사 생장 물 관리 시스템 연구)

  • Nam, Kang-Hyun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.10
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    • pp.989-994
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    • 2016
  • This study was conducted the management of a water level through the water sensor, the waterline and the drain applied to the rice paddy. The gateway transfers the information to oneM2M(: Machine to Machine) platform of IoT(: Internet of Thing) standards to the height of the water level sensor information through the LoRa connection. Depending on the water level requested by the IoT platform, the gateway is to On or Off waterline or drain motor switch and send the information of the water level sensor. IoT platform performs the intelligent application function according to the condition of the water level.

Design and Implementation of Interworking Gateway with QoS Adaptation (QoS 적응 기능을 갖는 연동 게이트웨이의 설계 및 구현)

  • Song, Byeong-Hun;Choe, Sang-Gi;Jeong, Gwang-Su
    • Journal of KIISE:Computing Practices and Letters
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    • v.5 no.5
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    • pp.619-627
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    • 1999
  • To support multimedia services between network domains with different environments, it is required to map the functionalities in many aspects. In this paper, we implemented interworking gateway which provides protocol conversion and QoS(Quality of Service) adaptation to interwork DAVIC services based on ATM(Asynchronous TRansfer Model )network and Internet AV services. The interworking gateway converts RTSP(Real-Time Streaming Protocol ) message into DSM-CC(Digital Storage Media Command & Control) messages to control the stream that is served in ATM network, and transmits data stream by using RTP(Real-Time Transport Protocol) The interworking gateway provides QoS adaptation functionalities by QoS monitoring and MPEG filtering to meet the variation of network bandwidth.

Fabrication and Characterization of 70 nm T-gate AlGaAs/InGaAs/GaAs metamorphic HEMT Device (70 nm T-게이트를 갖는 InGaAs/InAlAs/GaAs metamorphic HEMT 소자의 제작 및 특성)

  • 김성찬;임병옥;백태종;고백석;신동훈;이진구
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.9
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    • pp.19-24
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    • 2004
  • In this paper, we have demonstrated the fabrication of a 70 nm foot print of the T-gate by using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure method without a thin dielectric supporting layer on the substrate. The device performance was characterized by DC and RF measurement. The fabricated 70 nm InGaAs/InAlAs MHEMTS with 70 ${\mu}{\textrm}{m}$ unit gate width and 2 fingers showed good DC and RF characteristics of Idss, max =228.6 mA/mm, gm =645 mS/mm, and fT =255 GHz, respectively.

Design of The High-Level Architecture of Mobile Integration SNS Gateway and The MQTT Based Push Notification Protocol (모바일 통합 SNS 게이트웨이의 상위 구조 및 MQTT 기반의 푸시 알림 프로토콜 설계)

  • Lee, Shinho;Kim, Hyeonwoo;Ju, Hongtaek
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38B no.5
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    • pp.344-354
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    • 2013
  • In this paper, In order to solve the traffic of the SNS to be executed on smartphone, we propose the design of the SNS integrated gateway server. Also, we capture the payload size in a variety of methods to send the MQTT protocol and QoS level of MQTT protocol for communication between the client and the Gateway. And we present the results and analysis of packet loss and end-to-end delay. By using analysis proposed, we present the results of the integrated SNS Gateway push notification protocol design.

Device Degradation with Gate Lengths and Gate Widths in InGaZnO Thin Film Transistors (게이트 길이와 게이트 폭에 따른 InGaZnO 박막 트랜지스터의 소자 특성 저하)

  • Lee, Jae-Ki;Park, Jong-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.6
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    • pp.1266-1272
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    • 2012
  • An InGaZnO thin film transistor with different gate lengths and widths have been fabricated and their device degradations with device sizes have been also performed after negative gate bias stress. The threshold voltage and subthreshold swing have been decreased with decrease of gate length. However, the threshold voltages were increased with the decrease of gate lengths. The transfer curves were negatively shifted after negative gate stress and the threshold voltage was decreased. However, the subthreshold swing was not changed after negative gate stress. This is due to the hole trapping in the gate dielectric materials. The decreases of the threshold voltage variation with the decrease of gate length and the increase of gate width were believed due to the less hole injection into gate dielectrics after a negative gate stress.

고성능 BiCMOS 소자 제작 및 특성연구

  • Kim, Gwi-Dong;Han, Tae-Hyeon;Gu, Yong-Seo;Gu, Jin-Geun;Gang, Sang-Won
    • ETRI Journal
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    • v.14 no.3
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    • pp.75-96
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    • 1992
  • 이중 매몰층, $1.5\mum$ 에피두께, 이중 well, LOCOS 소자격리, LDD MOS 소자와 이중 다결정실리콘 전극을 갖는 바이폴라 소자에 의하여 구성된 BiCMOS 소자를 제작하였다. 제작된 소자를 측정 및 분석한 결과, 31단 CML 바이폴라($A_E=2X8\mum^2$)링 발진기와 31단 CMOS( $A_E=1.25X5\mum^2$) 인버터 링 발진기로부터 94ps/5V 와 330ps/12V의 게이트 전달 지연시간/소자 강복전압을 갖는 바이폴라 및 MOS소자특성을 얻을 수 있었다. 또한 BiCMOS 소자의 경우, 31단 BiCMOS 링 발진기로부터 약 700ps의 게이트 전달 지연시간을 얻었으며, 출력부하의 증가에 따른 속도의 감속비가 완만한 전기적 특성을 얻을 수 있었다.

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Fabrication of Pentacene-Based Organic Thin Film Transistor (펜타센을 활성층으로 사용하는 유기 TFT 제작)

  • 정민경;김도현;구본원;송정근
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.44-47
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    • 2000
  • 본 연구는 α-Si:H TFT(Amorphous Silicon Thin Film Transistor)를 대체 할 펜타센을 활성층으로 사용하는 박막 트랜지스터를 제작에 관한 것이다. 유기 박막 트랜지스터는 유기발광소자와 함께 유연한 디스플레이에 응용된다. 펜타센 박막 트랜지스터의 제작은 채널 길이 25㎛, 70㎛, 소스, 드레인, 게이트 전극으로 Au을 lift off 공정으로 제작하였으며, 펜타센은 OMBD(Organic Molecular Beam Deposition)로 기판온도를 80℃로 유지하여 증착하였다. 제작된 소자로부터 트랜지스터 전류-전압 특성곡선을 측정하였고, 게이트에 의한 채널의 전도도가 조절됨을 확인하였다. 그리고, 전달특성곡선으로부터 문턱전압과 전계효과 이동도를 추출하였다.

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Design and Implementation of a CORBA/SNMP Gateway (CORBA/SNMP 게이트웨이 설계 및 구현)

  • Lee, Gil-Hang;Heo, Jeong-Suk;Kim, Myung-Kyun
    • The Transactions of the Korea Information Processing Society
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    • v.7 no.8
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    • pp.2505-2513
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    • 2000
  • This paper describes the design and implementation of a CORBA/SNMP gateway. The gateway is used to integrate traditional network management systems using CORBA. The integrated network management system uses World Wide Web (WWW) and CORBA. WWW provides a platform-independent and easy-to-use interface to distributed applications and CORBA is used to integrate different network management models seamlessly. To support the traditional managed objects without modification, we use a translation gateway between two different management models. The integrated network management server consists of a WWW server with enhancement for network management and translation gateways for converting management operations between different management models. This paper describes the design and implementation of a CORBA/SNMP gateway. The CORBA/SNMP gateway provides a syntactic and dynamic translation between CORBA and SNMP management models. The gateway provides a CORBA view to SNMP MIBs and allows the CORBA managers to access SNMP agents via CORBA operations. The CORBA/SNMP gateway also delivers the traps occurred in the SNMP agents to the CORBA managers that want to receive the trap information.

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An Analysis of Integrated Disaster Alert Network-Gateway Protocol (이기종 경보 시스템 서버와 통합 재난 경보 게이트웨이 연계 프로토콜 분석)

  • Jeon, Inchan;Kim, Jihee;Kim, Jung Bin;Ahn, Soyoung;Choi, Seong Jong
    • Proceedings of the Korean Society of Broadcast Engineers Conference
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    • 2013.06a
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    • pp.254-255
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    • 2013
  • 최근 다양한 종류의 재난 발생이 증가와 그 피해로 인해 재난에 대한 관심이 높아지고 있다. 특히 재난이 발생 징후가 포착되었을 때나 재난이 발생하였을 때 그 정보를 신속하고 정확하게 전달하고자 국내에서는 각 재난의 특성에 맞는 다양한 종류의 경보시스템을 개발하여 운영하고 있다. 하지만 다양한 경보시스템들은 그 관리책임기관이 다르기 때문에 개별적으로 등장하였다. 그래서 하나의 경보를 전달하기 위해 여러 시스템을 각각 동작시켜야 하는 등의 비효율성의 문제가 발생하였다. 이와 같은 문제를 해결하기 위해 미국, 유럽등지에서는 재난관리 시스템을 통합하려는 연구를 진행하고 있으며, 국내에서도 통합경보시스템을 위한 연구가 진행되어 이 연구 결과로 "이기종 경보 시스템 서버와 통합 재난 경보 게이트웨이 연계 프로토콜" 표준이 제정되었다. 이에 본 논문은 통합재난경보네트워크(IDAN: Integrated Disater Alert Network)를 계층적으로 분석하고, 경보전달을 위한 국제 표준인 CAP(Common Alerting Protocol)과 비교 연구하여 IDAN의 문제점을 제시하고 이를 해결하기 위한 방법을 제안한다.

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Device Adapter Model based on Dynamic Management Module for u-Health gateway (u-헬스 게이트웨이를 위한 동적 관리 모듈 기반의 디바이스 어댑터 모델)

  • Kim, Jong-Tak;Song, Si-Yun;Hwang, Hee-Jeong
    • Journal of Internet Computing and Services
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    • v.11 no.2
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    • pp.41-48
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    • 2010
  • It is essential to guarantee a smooth communication and data exchange in a PHD(Personal Healthcare Device) network for applications providing U-health services. In spite of that, most of PHDs are heterogeneous, so the heterogeneity of their protocols makes it difficult to develop an integrated gateway sending sensed healthcare data to U-health service providers. To solve this problem, we suggest the design and implementation of a device adapter model based on dynamic managed module in this paper. Our model were implemented to work on the OSGi-based gateway middleware and to have interoperability in connection with the HL7 system that is the standard of the Healthcare Information systems. In addition, our model has an architecture supporting a communication based on the object serialization in order to provide extensibility in the functional aspect of applications. Through the experiment on a test-bed which is an implementation of the device adapter module for electrocardiogram and blood-pressure/blood-sugar device having one channel, we have confirmed the accuracy of sensing and sending data.