• Title/Summary/Keyword: 저면적

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Design of a Logic eFuse OTP Memory IP (Logic eFuse OTP 메모리 IP 설계)

  • Ren, Yongxu;Ha, Pan-bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.2
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    • pp.317-326
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    • 2016
  • In this paper, a logic eFuse (electrical Fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) using only logic transistors to reduce the development cost and period of OTP memory IPs is designed. To secure the reliability of other IPs than the OTP memory IP, a higher voltage of 2,4V than VDD (=1.5V) is supplied to only eFuse links of eFuse OTP memory cells directly through an external pad FSOURCE coming from test equipment in testing wafers. Also, an eFuse OTP memory cell of which power is supplied through FSOURCE and hence the program power is increased in a two-dimensional memory array of 128 rows by 8 columns being also able to make the decoding logic implemented in small area. The layout size of the designed 1kb eFuse OTP memory IP with the Dongbu HiTek's 110nm CIS process is $295.595{\mu}m{\times}455.873{\mu}m$ ($=0.134mm^2$).

A Low-Noise Low Dropout Regulator in $0.18{\mu}m$ CMOS ($0.18{\mu}m$ CMOS 저 잡음 LDO 레귤레이터)

  • Han, Sang-Won;Kim, Jong-Sik;Won, Kwang-Ho;Shin, Hyun-Chol
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.6
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    • pp.52-57
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    • 2009
  • This paper presents a low-noise low-dropout linear regulator that is suitable for on-chip integration with RF transceiver ICs. In the bandgap reference, a stacked diode structure is adopted for saving silicon area as well as maintaining low output noise characteristic. Theoretical analysis for supporting the approach is also described. The linear regulator is fabricated in $0.18{\mu}m$ CMOS process. It operates with an input voltage range of 2.2 V - 5 V and provide the output voltage of 1.8 V and the output current up to 90 mA. The measured line and load regulation is 0.04%/V and 0.46%, respectively. The output noise voltage is measured to be 479 nV/$^\surd{Hz}$ and 186 nV/$^\surd{Hz}$ from 100 Hz and 1 kHz offset, respectively.

An 8b 240 MS/s 1.36 ㎟ 104 mW 0.18 um CMOS ADC for High-Performance Display Applications (고성능 디스플레이 응용을 위한 8b 240 MS/s 1.36 ㎟ 104 mW 0.18 um CMOS ADC)

  • In Kyung-Hoon;Kim Se-Won;Cho Young-Jae;Moon Kyoung-Jun;Jee Yong;Lee Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.1
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    • pp.47-55
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    • 2005
  • This work describes an 8b 240 MS/s CMOS ADC as one of embedded core cells for high-performance displays requiring low power and small size at high speed. The proposed ADC uses externally connected pins only for analog inputs, digital outputs, and supplies. The ADC employs (1) a two-step pipelined architecture to optimize power and chip size at the target sampling frequency of 240 MHz, (2) advanced bootstrapping techniques to achieve high signal bandwidth in the input SHA, and (3) RC filter-based on-chip I/V references to improve noise performance with a power-off function added for portable applications. The prototype ADC is implemented in a 0.18 um CMOS and simultaneously integrated in a DVD system with dual-mode inputs. The measured DNL and INL are within 0.49 LSB and 0.69 LSB, respectively. The prototype ADC shows the SFDR of 53 dB for a 10 MHz input sinewave at 240 MS/s while maintaining the SNDR exceeding 38 dB and the SFDR exceeding 50 dB for input frequencies up to the Nyquist frequency at 240 MS/s. The ADC consumes, 104 mW at 240 MS/s and the active die area is 1.36 ㎟.

Parallel Inverse Transform and Small-sized Inverse Quantization Architectures Design of H.264/AVC Decoder (H.264/AVC 복호기의 병렬 역변환 구조 및 저면적 역양자화 구조 설계)

  • Jung, Hong-Kyun;Cha, Ki-Jong;Park, Seung-Yong;Kim, Jin-Young;Ryoo, Kwang-Ki
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.444-447
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    • 2011
  • In this paper, parallel IT(inverse transform) architecture and IQ(inverse quantization) architecture with common operation unit for the H.264/AVC decoder are proposed. By using common operation unit, the area cost and computational complexity of IQ are reduced. In order to take four execution cycles to perform IT, the proposed IT architecture has parallel architecture with one horizontal DCT unit and four vertical DCT units. Furthermore, the execution cycles of the proposed architecture is reduced to five cycles by applying two state pipeline architecture. The proposed architecture is implemented to a single chip by using Magnachip 0.18um CMOS technology. The gate count of the proposed architecture is 14.3k at clock frequency of 13MHz and the area of proposed IQ is reduced 39.6% compared with the previous one. The experimental result shows that execution cycle the proposed architecture is about 49.09% higher than that of the previous one.

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Deign of Small-Area Differential Paired eFuse OTP Memory for Power ICs (Power IC용 저면적 Differential Paired eFuse OTP 메모리 설계)

  • Park, Heon;Lee, Seung-Hoon;Jin, Kyo-Hong;Ha, Pan-Bong;Kim, Young-Hee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.8 no.2
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    • pp.107-115
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    • 2015
  • In this paper, a small-area 32-bit differential paired eFuse OTP memory for power ICs is designed. In case of smaller number of rows than that of columns for the OTP memory cell array, a scheme for the cell array reducing the number of SL driver circuits requiring their larger layout areas by routing the SL (source line) lines supplying programming currents for eFuse links in the row direction instead of the column direction as well as a core circuit is proposed. In addition, to solve a failure of being blown for non-blown eFuse links by the electro-migration phenomenon, a regulated voltage of V2V ($=2V{\pm}0.2V$) is used to a RWL (read word line) driver circuit and a BL (bit line) pull-up driver circuit. The layout size of the designed 32-bit eFuse OTP memory is $228.525{\mu}m{\times}105.435{\mu}m$, which is confirmed to be 20.7% smaller than that of the counterpart using the conventional cell array routing, namely $197.485{\mu}m{\times}153.715{\mu}m$.

Variable Cut-off Frequency and Variable Sample Rate Small-Area Multi-Channel Digital Filter for Telemetry System (텔레메트리 시스템을 위한 가변 컷 오프 주파수 및 가변 샘플 레이트 저면적 다채널 디지털 필터 설계)

  • Kim, Ho-keun;Kim, Jong-guk;Kim, Bok-ki;Lee, Nam-sik
    • Journal of Advanced Navigation Technology
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    • v.25 no.5
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    • pp.363-369
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    • 2021
  • In this paper, We propose variable cut-off frequency and variable sample rate small-area multi-channel digital filter for telemetry system. Proposed digital filter reduced hardware area by implementing filter banks that can variably use cut-off frequency and sample rate without additional filter banks for an arbitrary cut ratio. In addition, We propose the architecture in which sample rate can variably be selected according to the number of filters that pass through the multiplexer control. By using time division multiplexing (TDM) supported by the finite impulse response (FIR) intellectual property (IP) of Quartus, the proposed digital filter can greatly reduce digital signal processing (DSP) blocks from 80 to 1 compared without TDM. Proposed digital filter calculated order and coefficients using Kaiser window function in Matlab, and implemented using very high speed integrated circuits hardware descryption language (VHDL). After applying to the telemetry system, we confirmed that the proposed digital filter was operating through the experimental results in the test environment.

A Simple and Size-effective design method of Battery Charger with Low Ripple Current (작은 전류리플을 갖는 저면적 배터리 충전회로 설계)

  • Chung, Jin-Il;Kwack, Kae-Dal
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.523-524
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    • 2008
  • Proposed battery charger is a economic candidate because that is simple and small size. The circuit has linearly operational power stage. That use small size buffer with small driving current and large power MOS gate capacitance. The simulation result show that charging current is stable and has low ripple.

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A Signal Readout System for CNT Sensor Arrays (CNT 센서 어레이를 위한 신호 검출 시스템)

  • Shin, Young-San;Wee, Jae-Kyung;Song, In-Chae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.9
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    • pp.31-39
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    • 2011
  • In this paper, we propose a signal readout system with small area and low power consumption for CNT sensor arrays. The proposed system consists of signal readout circuitry, a digital controller, and UART I/O. The key components of the signal readout circuitry are 64 transimpedance amplifiers (TIA) and SAR-ADC with 11-bit resolution. The TIA adopts an active input current mirror (AICM) for voltage biasing and current amplification of a sensor. The proposed architecture can reduce area and power without sampling rate degradation because the 64 TIAs share a variable gain amplifier (VGA) which needs large area and high power due to resistive feedback. In addition, the SAR-ADC is designed for low power with modified algorithm where the operation of the lower bits can be skipped according to an input voltage level. The operation of ADC is controlled by a digital controller based on UART protocol. The data of ADC can be monitored on a computer terminal. The signal readout circuitry was designed with 0.13${\mu}m$ CMOS technology. It occupies the area of 0.173 $mm^2$ and consumes 77.06${\mu}W$ at the conversion rate of 640 samples/s. According to measurement, the linearity error is under 5.3% in the input sensing current range of 10nA - 10${\mu}A$. The UART I/O and the digital controller were designed with 0.18${\mu}m$ CMOS technology and their area is 0.251 $mm^2$.

Design of 77-GHz CMOS Voltage-Controlled Oscillator with Low-Phase Noise (저 위상잡음을 가진 77-GHz CMOS 전압제어발진기 설계)

  • Sung, Myeong-U;Chun, Jae-Il;Choi, Ye-Ji;Kil, Keun-Pil;Kim, Shin-Gon;Kurbanov, Murod;Samira, Delwar Tahesin;Siddique, Abrar;Ryu, Jee-Youl;Noh, Seok-Ho;Yoon, Min
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2019.05a
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    • pp.467-468
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    • 2019
  • 본 논문은 차량용 장거리 레이더를 위한 저 위상잡음 77GHz CMOS 전압제어발진기를 제안한다. 이러한 회로는 낮은 위상잡음을 가지도록 설계되어 있고, 1.5볼트 전원에서 동작한다. 제안한 회로는 TSMC $0.13{\mu}m$ 고주파 CMOS 공정으로 설계하였다. 제안한 회로는 최근 발표된 연구결과에 비해 저 위상잡음, 저 전력 및 적은 면적 특성을 보였다.

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The Effect of Low Impact Development Techniques on Urban Runoff (저영향개발기법이 도시 유출에 미치는 영향)

  • Kim, Hee Soo;Chung, Gun Hui
    • Proceedings of the Korea Water Resources Association Conference
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    • 2021.06a
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    • pp.391-391
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    • 2021
  • 최근에는 도시에는 불투수 면적의 증가로 지면 침투량이 줄어들고 유출량이 증가되고 있다. 또한 지면에서의 먼지 등 비점오염원의 유출로 인한 수질악화도 진행되는 경우가 많다. 그러므로 도시의 개발에 따른 악영향을 최소화하기 위해 다양한 저영향개발기법(Low Impact Development)을 도입하여 도시 물순환 건전성을 확보하기 위해 노력하고 있다. 본 연구에서는 도시 유역에서의 유출량 분석을 위해 저영향개발기법 중 투수성포장과 옥상녹화 등을 적용하여 침투량의 증가와 유출량 감소 결과를 분석하였다. 투수성포장과 옥상녹화의 영향이 크지는 않지만, 도시에서의 유출량 저감에 영향을 미칠 수 있는 것으로 분석되었으며, 향후 지속적인 도시 물순환 건 전성 확보연구의 기초 자료로 활용될 수 있을 것으로 보인다. 그 결과는 도시 개발 계획의 우선순위를 결정하는데 사용될 수 있어서, 도시 공간의 삶의 질이 향상될 것이다.

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