• Proceedings of the Korean Institute of Communication Sciences Conference
• /
• 1995.10a
• /
• pp.15-18
• /
• 1995

• Proceedings of the Korean Institute of Communication Sciences Conference
• /
• 1995.10a
• /
• pp.790-793
• /
• 1995

• Proceedings of the Korean Institute of Communication Sciences Conference
• /
• 1996.10a
• /
• pp.821-823
• /
• 1996

• Proceedings of the Korean Institute of Communication Sciences Conference
• /
• 1995.06a
• /
• pp.160-163
• /
• 1995

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.7
• /
• pp.1311-1316
• /
• 2016

This paper analyzes the influence of tunneling current on threshold voltage shift by channel length of short channel asymmetric double gate(DG) MOSFET. Tunneling current significantly increases by decrease of channel length in the region of 10 nm below, and the secondary effects such as threshold voltage shift occurs. Threshold voltage shift due to tunneling current is not negligible even in case of asymmetric DGMOSFET to develop for reduction of short channel effects. Off current consists of thermionic and tunneling current, and the ratio of tunneling current is increasing with reduction of channel length. The WKB(Wentzel-Kramers-Brillouin) approximation is used to obtain tunneling current, and potential distribution in channel is hermeneutically derived. As a result, threshold voltage shift due to tunneling current is greatly occurred for decreasing of channel length in short channel asymmetric DGMOSFET. Threshold voltage is changing according to bottom gate voltages, but threshold voltage shifts is nearly constant.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.7
• /
• pp.1617-1622
• /
• 2015

This paper analyzes the ratio of tunneling current for channel doping concentration of sub-10 nm asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current in subthreshold region increases in the region of channel length of 10 nm below. Even though asymmetric DGMOSFET is developed to reduce short channel effects, the increase of tunneling current in sub-10 nm is inevitable. As the ratio of tunneling current in off current according to channel doping concentration is calculated in this study, the influence of tunneling current to occur in short channel is investigated. To obtain off current to consist of thermionic emission and tunneling current, the analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for channel doping concentration in sub-10 nm asymmetric DGMOSFET, specially with parameters of channel length, channel thickness, and top/bottom gate oxide thickness and voltage.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.38C no.12
• /
• pp.1170-1178
• /
• 2013

Thanks to various benefits, low-cost real-time communication networks so called fieldbus have been widely used in many industrial applications including military systems, such as aircrafts, submarines, and robots. This paper presents a reliability analysis of dual-channel CAN(Controller Area Network) fieldbus which is used for controlling various equipment of submarine combat system. A submarine combat system playing a critical role to the success of missions and survivability consists of various devices including sensors/actuators and computers. Since a communication network for submarine combat system must satisfy an extremely high level of reliability, a dual channel technique is commonly adopted. In this paper, a Petri Net based reliability model for dual-channel CAN is discussed. A reliability model called generalized stochastic Petri Nets (GSPN) is built by utilizing the information on physical faults with CAN. The effectiveness of the proposed model is analyzed in terms of unreliability with respect to failure rate and repair rate.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.10 no.1
• /
• pp.39-50
• /
• 2010

In this paper, we analyze and simulate the performance of a tactics mobile communication system based on ultra wide band (UWB) in multi-user interference (MUI) environments. This system adopts a double binary turbo code for forward error correction (FEC). Wireless channel is modeled a modified Saleh and Valenzuela (SV) model. We employ a space time block coding (STBC) scheme for enhancing system performance. System performance is evaluated in terms of bit error probability. From the simulation results, it is confirmed that the tactics mobile communication system based on UWB, which is encoded with the double binary turbo code, can achieve a remarkable coding gain with reasonable encoding and decoding complexity in multi-user interference environments. It is also known that the bit error probability performance of the tactics mobile communication system based on UWB can be substantially improved by increasing the number of iterations in the decoding process for a fixed cod rate. Besides, we can demonstrate that the double binary turbo coding scheme is very effective for increasing the number of simultaneous users for a given bit error probability requirement.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.4
• /
• pp.805-810
• /
• 2016

The dependence of drain induced barrier lowering(DIBL) is analyzed for doping concentration in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to top/bottom gate oxide thickness and bottom gate voltage as well as channel doping concentration. As a results, the DIBL is significantly influenced by channel doping concentration. DIBL is significantly increased by doping concentration if channel length becomes under 25 nm. The deviation of DIBL is increasing with increase of oxide thickness. Top and bottom gate oxide thicknesses have relation of an inverse proportion to sustain constant DIBL regardless channel doping concentration. We also know the deviation of DIBL for doping concentration is changed according to bottom gate voltage.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.10 no.6
• /
• pp.243-249
• /
• 2010

In this thesis, in order to a equivalent circuit-analytical study for a symmetric double gate type MOSFET, we slove analytically the 2D Poisson's equation in a a silicon body. To solve the threshold voltage in a symmetric double gate type MOSFET from the derived expression for the surface potential which the two-dimensional potential distribution of a symmetric double gate type MOSFET is assumed approximately. This thesis can use short and long channel in a silicon body we introduce a new the threshold voltage model in a symmetric double gate type MOSFET and measure it the distance about the range of channel length up to 0.1 [${\mu}m$].