• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.805-810
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• 2016

The dependence of drain induced barrier lowering(DIBL) is analyzed for doping concentration in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to top/bottom gate oxide thickness and bottom gate voltage as well as channel doping concentration. As a results, the DIBL is significantly influenced by channel doping concentration. DIBL is significantly increased by doping concentration if channel length becomes under 25 nm. The deviation of DIBL is increasing with increase of oxide thickness. Top and bottom gate oxide thicknesses have relation of an inverse proportion to sustain constant DIBL regardless channel doping concentration. We also know the deviation of DIBL for doping concentration is changed according to bottom gate voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.3
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• pp.457-463
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• 2016

In this paper, a method of enhancing the bandwidth of a double-dipole quasi-Yagi antenna (DDQYA) using a modified integrated balun is presented. The modified integrated balun consists of a microstrip (MS) line inserted along the center of a coplanar strip (CPS) line and the end of the MS line is connected to the CPS line through a shorting pin at the feed point. The geometry of the modified integrated balun is adjusted to improve the bandwidth of the DDQYA. In addition, the performance of the proposed balun in a back-to-back configuration is compared with a conventional balun. The proposed antenna with the optimized modified integrated balun is fabricated on an FR4 substrate, and the experiment results show that the antenna has a frequency band of 1.56-3.04 GHz(64.4%) for a VSWR < 2, which shows enhanced bandwidth compared to the DDQYA with the conventional balun.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.575-580
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• 2015

Asymmetric double gate(DG) MOSFET is a novel transistor to be able to reduce the short channel effects. This paper has analyzed a off current for conduction path of asymmetric DGMOSFET. The conduction path is a average distance from top gate the movement of carrier in channel happens, and a factor to change for oxide thickness of asymmetric DGMOSFET to be able to fabricate differently top and bottom gate oxide thickness, and influenced on off current for top gate voltage. As the conduction path is obtained and off current is calculated for top gate voltage, it is analyzed how conduction path influences on off current with parameters of oxide thickness and channel length. The analytical potential distribution of series form is derived from Poisson's equation to obtain off current. As a result, off current is greatly changed for conduction path, and we know threshold voltage and subthreshold swing are changed for this reasons.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.581-586
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• 2015

This paper has analyzed the variation of subthreshold swing for the ratio of channel length and thickness for asymmetric double gate MOSFET. The asymmetric double gate MOSFET has the advantage that the factors to control the short channel effects increase since top and bottom gate structure can be fabricated differently. The degradation of transport property due to rapid increase of subthreshold swing can be specially reduced in the case of reduction of channel length. However, channel thickness has to be reduced for decrease of channel length from scaling theory. The ratio of channel length vs. thickness becomes the most important factor to determine subthreshold swing. To analyze hermeneutically subthreshold swing, the analytical potential distribution is derived from Poisson's equation, and conduction path and subthreshold swing are calculated for various channel length and thickness. As a result, we know conduction path and subthreshold swing are changed for the ratio of channel length vs. thickness.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1350-1357
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• 1988

The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.579-583
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• 1998

Silicide layer structures, agglomeration of silicide layers, and dopant redistributions for the Co/Ti bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The $CoSi_2$ phase transition temperature is higher and agglomeration of the silicide layer occurs more severely for the Co/Ti bilayer on the doped polycrystalline Si substrate than on the single Si substrate. Also, dopant loss by outdiffusion is much more significant on the doped polycrystalline Si substrate than on the single Si substrate. All of these differences are attributed to the grain boundary diffusion and heavier doping concentration in the polycrystalline Si. The layer structure after silicidation annealing of Co/ Tildoped - polycrystalline Si is polycrystalline CoSi,/polycrystalline Si, while that of Co/TiI( 100) Si is Co- Ti- Si/epi- CoSi,/(lOO) Si.

• Journal of the Korean Electrochemical Society
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• v.12 no.1
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• pp.34-39
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• 2009

In this study, a needle coke was oxidized in a mixture of dilute nitric acid and sodium chlorate ($NaClO_3$) solutions and followed by heat treatment. The samples were analyzed with using XRD, FESEM, elemental analyzer, BET, and Raman spectroscopy. Double layer capacitance was measured with the charge and discharge measurements. The consisting layers of the needle coke were expanded to single phase showing only (001) diffraction peak by the acid treatment for 24 hours. The oxidized coke returned to a graphite structure appearing (002) peak after heat treatment above $200^{\circ}C$. The structure returned could be more easily accessible to the ions by the first charge, and improve the double layer capacitance at the second charge. The two-electorde cell from acid treated coke and $300^{\circ}C$ heat treatment exhibited the maximum capacitances of 32.1 F/g and 29.5 F/ml at the potential of $0{\sim}2.5\;V$.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1996.04a
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• pp.161-161
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• 1996

본 연구에서는 차량(승용차) 시동용 수퍼캐패시터-밧데리 조합시스템에 적용할 시작품 전기이중층 수퍼캐패시터(super-capacitor:SC)를 설계 제작 개발하고 그 성능 특성을 확인하였다. 재래식의 차량용 밧데리의 비동력(specific power)이 100~200 W/kg에 비하여 전기이중층 SC의 경우는 1,000~3,000 W/kg으로 단위 총량당의 동력이 매우 크다. 또한 충방전시의 화학반응이 없는 관계로 인하여 충전식 2차 전지에 비하여 사용수명이 매우 길다. 이러한 SC를 기존의 밧데리와 함께 조합하여 차량 시동용으로 사용하게 되면 밧데리의 사용수명을 2~3배 길게 할 수 있으며 밧데리는 시동에 필요한 큰 전류의 방전이 요구되지 않으므로 그 용량과 크기가 대체로 절반이상 줄어든다. 또한 매우 낮은 온도의 기후조건에서는 밧데리의 방전효율이 급격히 저하되므로 이를 대비하여 필요 이상의 과용량, 과중량 밧데리의 사용이 실제로 행해지고 있으나 조합시스템의 차량 시동시에는 SC가 갖는 특성상 -5$0^{\circ}C$까지의 기후조건에서도 방전효율이 크게 저하되지 않은 채 시동전류를 공급해주므로 혹한지역이나 혹한시의 차량시동에도 탁월한 시동성능을 갖는다. 설계 제작된 SC는 저장에너지 6KJ, 정격전압 12Volt, 설계축전용량 70F 그리고 사용은 도 범위가 섭씨 영하 25도에서 영상 50도이며 무공해성 수용성 전해질을 사용하였으며, 제작된 CS는 사용온도 범위에서 축전용량 65F - 85F, 내부저항 1.8mOhm - 5.2mOhm의 변화를 보였으며, 정상시동에 필요한 방전전류 300Amp의 경우 2.6초의 방전시간, 약 89%의 방전효율을 보였다. 현재까지 상온하에서 30.000회의 충방전 시험결과로서는 방전효율의 저하가 없는 양호한 성능을 보였으며, SC의 시범 작동시험을 실차(소나타 1800cc)에 장착하여 수행한 결과 20회 이상의 연속시동에서도 아무런 문제점 없이 잘 동작하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.2
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• pp.252-258
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• 2017

In this paper, the bandwidth and gain enhancement of a double-dipole quasi-Yagi antenna (DDQYA) using a modified balun and two directors is studied. The proposed DDQYA consists of two strip dipoles with different lengths, a ground reflector, which are connected through a coplanar strip line, and two directors. The modified balun is used to increase the bandwidth, whereas two directors are appended to the DDQYA to enhance the gain in the middle and high frequency band. The effects of the length and width of the first director on the antenna performance are analyzed, and final design parameters to obtain a gain over 7 dBi at 1.60-2.90 GHz band are obtained. A prototype of the proposed DDQYA is fabricated on an FR4 substrate, and the experimental results show that the antenna has a frequency band of 1.57-3.00 GHz for a VSWR < 2, and measured gain ranges 7.1-7.8 dBi at 1.60-2.90 GHz band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.7
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• pp.1617-1622
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• 2015

This paper analyzes the ratio of tunneling current for channel doping concentration of sub-10 nm asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current in subthreshold region increases in the region of channel length of 10 nm below. Even though asymmetric DGMOSFET is developed to reduce short channel effects, the increase of tunneling current in sub-10 nm is inevitable. As the ratio of tunneling current in off current according to channel doping concentration is calculated in this study, the influence of tunneling current to occur in short channel is investigated. To obtain off current to consist of thermionic emission and tunneling current, the analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for channel doping concentration in sub-10 nm asymmetric DGMOSFET, specially with parameters of channel length, channel thickness, and top/bottom gate oxide thickness and voltage.