• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.375.2-375.2
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• 2016

그래핀(Graphene)은 원자 한 층 두께의 얇은 특성에 기인하여 우수한 투과도(~97.3%)를 나타내며, 높은 전자 이동도($200,000cm^2V^{-1}s^{-1}$)로 인하여 전기 전도도가 우수한 2차원 전자소재이다. 또한 유연하고 우수한 기계적 물성을 가지고 있어 실제로 다양한 소자에서 활용되고 있다. 그래핀을 이용하여 다양한 소자로 응용하기 위한 과정 중 하나인 포토리소그래피 공정(Photolithography process)은 원하는 패턴을 만들기 위해 제작하고자 하는 기판 위에 포토레지스트(Photoresist)를 코팅하는 과정을 거치게 된다. 하지만 이러한 과정은 소자 제작에 있어서 포토레지스트 잔여물을 남기게 된다. 그래핀 위에 남은 포토레지스트 잔여물은 그래핀의 우수한 전기적 특성을 저하시켜 소자특성에 불이익을 주게 된다. 본 연구에서는 수소 플라즈마를 이용하여 그래핀 위에 남은 중합체(Polymer) 잔여물을 제거한다. 사용한 그래핀은 화학 기상 증착법(Chemical vapor deposition)을 이용하여 성장시켰으며, PMMA(Poly(methyl methacrylate))를 이용하여 이산화규소(silicon dioxide) 기판에 전사하였다. 그래핀의 손상 없이 중합체 잔여물을 제거하기 위해 플라즈마 처리시간을 15초부터 1분까지 늘려가며 연구를 진행하였으며, 플라즈마 처리 시간에 따른 중합체 잔여물의 제거 정도와 그래핀의 보존 여부를 확인하기 위해 라만 분광법(Raman spectroscopy)과 원자간력현미경(Atomic force microscopy)을 사용하였다. 본 연구 결과를 통해 간단한 플라즈마 처리로 보다 나은 특성의 그래핀 소자를 얻게 됨으로써, 향상된 특성을 가진 그래핀 소자로 산업적 응용 가능성을 높일 수 있을 것이라 생각된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.81-81
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• 2010

태양광 또는 자연의 힘을 이용한 에너지의 생산은 가까운 미래에 화석연료의 고갈과 이들의 소모로 인해 발행하는 이산화탄소로 인한 지구 온난화등의 문제로 인하여 그 중요성이 점증되고 있는 실정이다. 특히 태양광으로부터 전기에너지를 얻는 발전 방식은 오래전부터 연구되어 왔고 또한 상용화되어 국부적으로 보조 에너지원으로 이용되어 지고 있다. 동작 원리에 따라 이종접합에서 오는 전위차를 이용하는 방법, 동종 물질의 pn접합을 이용하여 기전력을 얻은 방법 및 연료 감응형 종류가 있다. 이 중에서 물질의 이종접합을 이용하는 방법은 아주 오래된 태양전력을 얻는 방식이나 그 동안 연구가 미비하였던 것이 사실이다. 이에 우리는 새로운 재료인 그래핀을 이용하여 산화구리와의 이종접합 태양전지의 제작및 특성을 분석 하였다. 화학기상증착법 (CVD)을 이용해 그래핀을 구리 박편 표면에 성장하였다. 적절한 온도(섭씨 약 1000도)에서 아주 적은 양의 수소 및 메탄을 흘려 주었을때 손쉽게 단일 원자층의 그래핀이 코팅된 구리박편을 얻을 수 있으며, 이 박편을 고온에서 산화 시키면 그래핀은 산화되지 않고 구리만 산화되어 손쉽게 쇼트키타입 태양전지를 얻을 수 있다. 이때 그래핀은 다른 공정 없이 투명전극의 역할을 한다. 간단한 전극을 부착하여 태양전지를 성능을 평가 하였고 그래핀 및 산화구리의 계면효과를 분석하였다. 효율면에서 III-V족 및 실리콘계의 태양전지에 비해 떨어지나 산화구리의 결정화 순도및 산화구리와 금속간의 계면개선 연구를 통해 극복가능 할 것으로 생각된다.

• Membrane Journal
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• v.33 no.1
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• pp.1-12
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• 2023

In this review, surface modification methods of hydrophobic poly(tetrafluoroethylene) (PTFE) membrane are introduced and their improved hydrophilicity results are discussed. Fluoropolymer based membranes, represented by PTFE membranes have been used in various membrane separation processes, including membrane distillation, oil separation and gas separation. However, despite excellent physical properties such as chemical resistance, heat resistance and high mechanical strength, the strong hydrophobicity of PTFE membrane surface has become a challenging factor in expanding its membrane separation application. To improve the separation performance of PTFE membranes, wet chemical, hydrophilic coating, plasma, irradiation and atomic layer deposition are applied, modifying the surface property of PTFE membranes while maintaining their inherent properties.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.169-181
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• 2020

The ferroelectricity in emerging fluorite-structure oxides such as HfO₂ and ZrO₂ has attracted increasing interest since 2011. Different from conventional ferroelectrics, the fluorite-structure ferroelectrics could be reliably scaled down below 10 nm thickness with established atomic layer deposition technique. However, defects such as carbon, hydrogen, and nitrogen atoms in fluorite-structure ferroelectrics are reported to strongly affect the nanoscale polymorphism and resulting ferroelectricity. The characteristic nanoscale polymorphism and resulting ferroelectricity in fluorite-structure oxides have been reported to be influenced by defect concentration. Moreover, the conduction of charge carriers through fluorite-structure ferroelectrics is affected by impurities. In this review, the origin and effects of various kinds of defects are reviewed based on existing literature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.35-35
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• 2003

Recent progress in the integration of the ferroelectric random access memories (FRAM) has attracted much interest. Strontium bismuth tantalate(SBT) is one of the most attractive materials for use in nonvolatile-memory applications due to low-voltage operations, low leakage current, and its excellent fatigue-free property. High-density FRAMs operated at a low voltage below 1.5V are applicable to mobile devices operated by battery. SBT films thinner than 0.1 #m can be operated at a low voltage, because the coercive voltage (Vc) decreases as the film thickness is reduced. In addition, the thickness of the SBT film will have to be reduced so it can fit between adjacent storage nodes in a pedestal type capacitor in future FRAMs.

• Journal of Powder Materials
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• v.27 no.1
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• pp.63-71
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• 2020

It is necessary to fabricate uniformly dispersed nanoscale catalyst materials with high activity and long-term stability for polymer electrolyte membrane fuel cells with excellent electrochemical characteristics of the oxygen reduction reaction and hydrogen oxidation reaction. Platinum is known as the best noble metal catalyst for polymer electrolyte membrane fuel cells because of its excellent catalytic activity. However, given that Pt is expensive, considerable efforts have been made to reduce the amount of Pt loading for both anode and cathode catalysts. Meanwhile, the atomic layer deposition (ALD) method shows excellent uniformity and precise particle size controllability over the three-dimensional structure. The research progress on noble metal ALD, such as Pt, Ru, Pd, and various metal alloys, is presented in this review. ALD technology enables the development of polymer electrolyte membrane fuel cells with excellent reactivity and durability.

• Journal of Powder Materials
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• v.25 no.1
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• pp.60-68
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• 2018

The design and fabrication of photoelectrochemical (PEC) electrodes for efficient water splitting is important for developing a sustainable hydrogen evolution system. Among various development approaches for PEC electrodes, the chemical vapor deposition method of atomic layer deposition (ALD), based on self-limiting surface reactions, has attracted attention because it allows precise thickness and composition control as well as conformal coating on various substrates. In this study, recent research progress in improving PEC performance using ALD coating methods is discussed, including 3D and heterojunction-structured PEC electrodes, ALD coatings of noble metals, and the use of sulfide materials as co-catalysts. The enhanced long-term stability of PEC cells by ALD-deposited protecting layers is also reviewed. ALD provides multiple routes to develop improved hydrogen evolution PEC cells.

• Journal of the Korean Society for Precision Engineering
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• v.33 no.8
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• pp.691-695
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• 2016

This paper covers the investigation of the microscale behavior of Pt nanostrucures fabricated by atomic layer deposition (ALD) at elevated temperature. Nanoparticles are fabricated at up to 70 ALD cycles, while congruent porous nanostructures are observed at > 90 ALD cycles. The areal density of the ALD Pt nanostructure on top of the SiO2 substrate was as high as 98% even after annealing at $450^{\circ}C$ for 1hr. The sheet resistance of the ALD Pt nanostructure dramatically increased when the areal density of the nanostructure decreased below 85 - 89% due to coarsening at elevated temperature.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.49-55
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• 2016

The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was $7.60J/m^2$. The interfacial adhesion energy decreased to $5.65J/m^2$ after 500 hrs at $85^{\circ}C$/85% T/H condition, while it increased to $24.05J/m^2$ after annealing at $200^{\circ}C$ for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/$SiO_2$ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between $AlO_x$ and $SiO_2$ interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/$SiO_2$ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.7-12
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• 2018

The effects of Ru deposition temperature and post-annealing conditions on the interfacial adhesion energies of atomic layer deposited (ALD) Ru diffusion barrier layer and Cu thin films for the advanced Cu interconnects applications were systematically investigated. The initial interfacial adhesion energies were 8.55, 9.37, $8.96J/m^2$ for the sample deposited at 225, 270, and $310^{\circ}C$, respectively, which are closely related to the similar microstructures and resistivities of Ru films for ALD Ru deposition temperature variations. And the interfacial adhesion energies showed the relatively stable high values over $7.59J/m^2$ until 250h during post-annealing at $200^{\circ}C$, while dramatically decreased to $1.40J/m^2$ after 500 h. The X-ray photoelectron spectroscopy Cu 2p peak separation analysis showed that there exists good correlation between the interfacial adhesion energy and the interfacial CuO formation. Therefore, ALD Ru seems to be a promising diffusion barrier candidate with reliable interfacial reliability for advanced Cu interconnects.