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http://dx.doi.org/10.6117/kmeps.2018.25.3.007

Effect of Post-annealing on the Interfacial adhesion Energy of Cu thin Film and ALD Ru Diffusion Barrier Layer  

Jeong, Minsu (Amkor Technology Korea Inc.)
Lee, Hyeonchul (STATS ChipPAC Korea LTD.)
Bae, Byung-Hyun (VITZROTECH Co., Ltd.)
Son, Kirak (School of Materials Science and Engineering, Andong National University)
Kim, Gahui (School of Materials Science and Engineering, Andong National University)
Lee, Seung-Joon (School of Materials Science and Engineering, Yeungnam University)
Kim, Soo-Hyun (School of Materials Science and Engineering, Yeungnam University)
Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.25, no.3, 2018 , pp. 7-12 More about this Journal
Abstract
The effects of Ru deposition temperature and post-annealing conditions on the interfacial adhesion energies of atomic layer deposited (ALD) Ru diffusion barrier layer and Cu thin films for the advanced Cu interconnects applications were systematically investigated. The initial interfacial adhesion energies were 8.55, 9.37, $8.96J/m^2$ for the sample deposited at 225, 270, and $310^{\circ}C$, respectively, which are closely related to the similar microstructures and resistivities of Ru films for ALD Ru deposition temperature variations. And the interfacial adhesion energies showed the relatively stable high values over $7.59J/m^2$ until 250h during post-annealing at $200^{\circ}C$, while dramatically decreased to $1.40J/m^2$ after 500 h. The X-ray photoelectron spectroscopy Cu 2p peak separation analysis showed that there exists good correlation between the interfacial adhesion energy and the interfacial CuO formation. Therefore, ALD Ru seems to be a promising diffusion barrier candidate with reliable interfacial reliability for advanced Cu interconnects.
Keywords
Cu interconnect; ALD; Ru; 4-point bending test; interfacial adhesion energy;
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Times Cited By KSCI : 3  (Citation Analysis)
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