• Journal of Adhesion and Interface
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• v.18 no.2
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• pp.68-74
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• 2017

Epoxy resins are widely used in various fields due to their excellent thermal, mechanical and chemical properties. In order to improve the mechanical properties of the epoxy composition after curing, various materials are mixed in the epoxy resin. Among the nano materials, CNT is the most widely used. However, CNT has limitations in terms of manufacturing process and manufacturing cost. Therefore, there is a growing interest in naturally occurring HNTs having similar structure to that of CNT. In this study, the thermal and mechanical properties of epoxy compositions containing HNTs treated with two types of silane compounds were investigated. The mechanical properties of silane-treated HNT were measured by using a universal testing machine. The differential scanning calorimeter (DSC), thermogravimetric analysis (TGA), and thermomechanical analysis (TMA) were used to measure thermal properties. As a result of the above tests, when the HNT was surface-treated with aminosilane, the tensile strength of the epoxy composition containing the HNT was higher than that of the epoxy composition containing epoxy silane treated HNT. The linear thermal expansion coefficients (CTE) obtained from the thermomechanical analysis of the two epoxy compositions for the comparison of dimensional stability showed that the HNT composition treated with aminosilane showed a lower value of CTE than that of epoxy composition including the pristine HNT.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.112-117
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• 2008

Vertical interconnection scheme using novel silicon-through-via for 3D MEMS devices or stacked package is proposed and fabricated to demonstrate its feasibility. The suggested silicon-through-via replaces electroplated copper, which is used as an interconnecting material in conventional through-via, with doped silicon. Adoption of doped silicon instead of metal eliminates thermal-mismatch-induced stress, which can make troubles in high temperature MEMS processes, such as wafer bonding and LP-CVD(low pressure chemical vapor deposition). Two silicon layers of $30{\mu}m$ thickness are stacked on the substrate. The through-via arrays with spacing $40{\mu}m$ and $50{\mu}m$ are fabricated successfully. Electrical characteristics of the through-via are measured and analyzed. The measured resistance of the silicon-through-via is $169.9\Omega$.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.78-78
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• 2000

다결정 실리콘-게르마늄 (poly-SiGe)은 태양전지 개발에 있어서 중요한 물질이다. 우리는 소량의 Ge(x=0.05)으로부터 다량의 Ge(x=0.67)을 함유한 수소화된 비정질 실리콘-게르마늄 (a-SiGe:H) 박막의 고상결정화 과정을 ESR (electron spin resonance)방법으로 조사해보았다. 먼저 PECVD 방법으로 Corning 1737 glass 위에 a-Si1-xGex:H 박막을 증착시켰다. 증착가스는 SiH4, GeH4 가스를 썼으며, 기판온도는 20$0^{\circ}C$, r.f. 전력은 3W, 증착시 가스압력은 0.6 Torr 정도이었다. 증착된 a-SiGe:H 박막은 $600^{\circ}C$ N2 분위기에서 다시 가열되어 고상결정화 되었고, 결정화 정도는 XRD (111) peak의 세기로부터 구해졌다. ESR 측정은 상온 x-band 영역에서 수행되었다. 측정된 ESR스팩트럼은 두 개의 Gaussian 함수로써 Si dangling-bond와 Ge dangling-bond 신호로 분리되었다. 가열 초기의 a-SiGe:H 박막 결함들의 스핀밀도의 증가는 수소 이탈에 기인하고, 또 고상결정화 과정에서 결정화된 정도와 Ge-db 스핀밀도의 변화는 서로 깊은 상관관계가 있음을 알 수 있었다. 특히 Ge 함유량이 큰 박막 (x=0.21, 0.67)에서 뿐만 아니라 소량의 Ge이 함유된 박막(x=0.05)에서도 Ge dangling-bond가 Si dangliong-bond 보다 고상결정화 과정에서 더 중요한 역할을 한다는 것을 알수 있었다. 또한 초기 열처리시 Si-H, Ge-H 결합에서 H의 이탈로 인하여 나타나는 Si-dangling bond, Ge-dangling bond 스핀밀도의 최대 증가 시간은 x 값에 의존하였는데 이러한 결과는 x값에 의존하는 Si-H, Ge-H 해리에너리지로 설명되어 질 수 있다. 층의 두께가 500 미만인 커패시터의 경우에 TiN과 Si3N4 의 계면에서 형성되는 슬릿형 공동(slit-like void)에 의해 커패시터의 유전특성이 파괴된다는 사실을 알게 되었으며, 이러한 슬릿형 공동은 제조 공정 중 재료에 따른 열팽창 계수와 탄성 계수 등의 차이에 의해 형성된 잔류응력 상태가 유전막을 기준으로 압축응력에서 인장 응력으로 바뀌는 분포에 기인하였다는 사실을 확인하였다.SiO2 막을 약화시켜 절연막의 두께가 두꺼워졌음에도 기존의 SiO2 절연막의 절연 파괴 전압 및 누설 전류오 비교되는 특성을 가졌다. 이중막을 구성하고 있는 안티퓨즈의 ON-저항이 단일막과 비교해 비슷한 것을 볼 수 잇는데, 그 이유는 TiO2에 포함된 Ti가 필라멘트에 포함되어 있어 필라멘트의 저항을 감소시켰기 때문으로 사료된다. 결국 이중막을 구성시 ON-저항 증가에 의한 속도 저하 요인은 없다고 할 수 있다. 5V의 절연파괴 시간을 측정한느 TDDB 테스트 결과 1.1$\times$103 year로 기대수치인 수십 년보다 높아 제안된 안티퓨즈의 신뢰성을 확보 할 수 있었다. 제안된 안티퓨즈의 이중 절연막의 두께는 250 이고 프로그래밍 전압은 9.0V이고, 약 65$\Omega$의 on 저항을 얻을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대체할 수 있다. 이와 더불

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.101-105
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• 2019

The adhesion reliability of the epoxy molding compound (EMC) and the printed circuit board (PCB) interface is critical to the quality and lifetime of the chip package since the EMC protects PCB from the external environment during the manufacturing, storage, and shipping processes. It is necessary to measure adhesion energy accurately to ensure product reliability by optimizing the manufacturing process during the development phase. This research deals with the measurement of EMC/PCB interfacial adhesion energy of chip package that has warpage induced by the coefficient of thermal expansion (CTE) mismatch. The double cantilever beam (DCB) test was conducted to measure adhesion energy, and the spring back force of specimens with warpage was compensated to calculate adhesion energy since the DCB test requires flat substrates. The result was verified by comparing the adhesion energy of flat chip packages come from the same manufacturing process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.218-224
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• 2011

LAS ($Li_2O-Al_2O_3-SiO_2$) ceramics were sintered by a solid-state reaction. $CaCO_3$ and $ZrO_2$ were added to the ${\beta}$-spodumene ($Li_2O-Al_2O_3-4SiO_2$) composition of the LAS system for enhancement of sintering behavior and mechanical strength, respectively. We have investigated the sintering characteristics, microstructures, mechanical properties and thermal expansion characteristics according to the change of the amount of additive and sintering temperature of the ${\beta}$-spodumene. At 0.1 mol% $CaCO_3$, the densification of ${\beta}$-spodumene was significantly improved. At 0.04 mol% $ZrO_2$, the strength of ${\beta}$-spodumene was also improved. For all the selected all compositions, the thermal expansion coefficient was measured by a dilatometer, which revealed 1.2 to $1.7{\times}10^6/^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.180-188
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• 2013

The glass of E-glass fiber composition was fabricated by using refused coal ore which is obtained as by-product from Dogye coal mine in Samcheok. We used silica-alumina refused coal ore which has low carbon content relatively, and the amount of refused coal ore has been changed from 0 to 35 % in batch composition. E-glass was fabricated by the melting of mixed batch materials at $1550^{\circ}C$ for 2 hrs with different refused coal ore composition of 0~35 %. We obtained a transparent and clear glass with high visible light transmittance value of 81~84%, thermal expansion coefficient of $5.39{\sim}5.61{\times}10^{-6}/^{\circ}C$ and softening point of $851{\sim}860^{\circ}C$. The glass fiber samples were also obtained through fiberizing equipment at $1150^{\circ}C$, and tested chemical resistance and tensile strength to evaluate the mechanical property as a reinforced glass fiber of composite material. As the result, we identified the properties of E-glass fiber by using refused coal ore are plenty good enough compare to that of normal E-glass without refused coal ore, and confirmed the possibility of refused coal ore as for the raw material of E-glass fiber.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.893-899
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• 2004

The mechanical properties and microstructure and thermal properties of Nitrided Pressureless Sintering(NPS) silicon nitride ceramics, containing three type of $Al_{2}O_3,\;Y_{2}O_3$ sintering additives, were investigated. Also, we have investigated the effect of silicon metal content changing with 0, 5, 10, 15, and $20wt\%$ Si in each composition. In $5wt\%\;Al_{2}O_3,\;5wt\%\;Y_{2}O_3,\;and\;5wt\%$ Si composition, silicon nitride sintered body was successfully densified to a high density. The average 4-point flexural strength and relative density of these specimens were 500 MPa and 98% respectively. Also, Thermal expansion coefficient and thermal conductivity of specimens at room temperature were $2.89{\times}10^{-6}/^{\circ}C\;and\;28W/m^{\circ}C$, respectively. The flexural strength of sintered specimens after thermal shock test of 20,000 cycles was maintained as-received value of 500 MPa.

• Polymer(Korea)
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• v.36 no.3
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• pp.281-286
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• 2012

Experimental study was performed regarding the effects of disc-like filler orientation and contents on the coefficient of thermal expansion (CTE) of polypropylene composites using the three dimensional ellipsoids ($a_1$ > $a_2$ > $a_3$) analyzed by two aspect ratios(${\rho}_{\alpha}=a_1/a_3$and ${\rho}_{\beta}=a_1/a_2$). Measured data were compared with the theoretical approaches proposed by Lee et al. Mica and talc were useed as disk-like fillers in the composites. As experimental results, ${\alpha}_{11}/{\alpha}_m$ decreased down to ca. 0.56 with mica content of 20 wt% and the aspect ratios, ${\rho}_{\alpha}=13.5$, ${\rho}_{\beta}=1.8$. However, ${\alpha}_{33}/{\alpha}_m$ increased to more than 1. In the case of talc, ${\alpha}_{11}/{\alpha}_m$ decreased to ca. 0.63 with 20 wt% and ${\rho}_{\alpha}=3.7$, ${\rho}_{\beta}=1.4$. Finally, the longitudinal CTEs (${\alpha}_{11}$) of polypropylene composites decreased as filler contents increased, but normal CTE (${\alpha}_{33}$) increased in the low filler contents like the theory.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.184-189
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• 2002

This study, compared with data of PbO-base glass system is a part of new glass composition design with Bi-base composition for PDP Rib. As $Bi_2O_3-B_2O_3-ZnO$ glass composition including Bi, which have similar density value and work facility to PbO, properties of softening point, thermal expansion coefficient, chemical durability, dielectric constant, and structural changing by XPS were investigated. $Bi_2O_3-B_2O_3-ZnO$ glass system, added 50∼80 wt% $Bi_2O_3$ widely, were presented 400∼480$^{\circ}C$ softening temperature, $68{\sim}72{\times}10^{-7}/^{\circ}C$ thermal expansion coefficient and 13∼25 dielectric constant. These results were showed similar physical properties with Pb-base glass system of same composition content, application possibility as starting composition of rib material was identified through micro-control of components and physical properties. The bonding energy of $O_{1s}$ as the $Bi_2O_3$ content decreasing was increased and full width at half-maximum (FWHM) was decreased, which is caused by non-bridging oxygen increasing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.11-14
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• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.