• Title/Summary/Keyword: 수신전압

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A Design and Implementation of 4×10 Gb/s Transimpedance Amplifiers (TIA) Array for TWDM-PON (TWDM-PON 응용을 위한 4×10 Gb/s Transimpedance Amplifier 어레이 설계 및 구현)

  • Yang, Choong-Reol;Lee, Kang-Yoon;Lee, Sang-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39B no.7
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    • pp.440-448
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    • 2014
  • A $4{\times}10$ Gb/s Transimpedance Amplifier (TIA) array is implemented in $0.13{\mu}m$ CMOS process technology, which will be used in the receiver of TWDM-PON system. A technology for bandwidth enhancement of a given $4{\times}10$ Gb/s TIA presented under inductor peaking technology and a single 1.2V power supply based low voltage design technology. It achieves 3 dB bandwidth of 7 GHz in the presence of a 0.5 pF photodiode capacitance. The trans-resistance gain is $50dB{\Omega}$, while 48 mW/ 1channel from a 1.2 V supply. The input sensitivity of the TIA is -27 dBm. The chip size is $1.9mm{\times}2.2mm$.

A 3-GSymbol/s/lane MIPI C-PHY Transceiver with Channel Mismatch Correction Circuit (채널 부정합 보정 회로를 가진 3-GSymbol/s/lane MIPI C-PHY 송수신기)

  • Choi, Seokwon;Song, Changmin;Jang, Young-Chan
    • Journal of IKEEE
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    • v.23 no.4
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    • pp.1257-1264
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    • 2019
  • A 3-GSymbol/s/lane transceiver, which supports the mobile industry processor interface (MIPI) C-physical layer (PHY) specification version 1.1, is proposed. It performs channel mismatch correction to improve the signal integrity that is deteriorated by using three-level signals over three channels. The proposed channel mismatch correction is performed by detecting channel mismatches in the receiver and adjusting the delay times of the transmission data in the transmitter according to the detection result. The channel mismatch detection in the receiver is performed by comparing the phases of the received signals with respect to the pre-determined data pattern transmitted from the transmitter. The proposed MIPI C-PHY receiver is designed using a 65 nm complementary metal-oxide-semiconductor (CMOS) process with 1.2 V supply voltage. The area and power consumption of each transceiver lane are 0.136 ㎟ and 17.4 mW/GSymbol/s, respectively. The proposed channel mismatch correction reduces the time jitter of 88.6 ps caused by the channel mismatch to 34.9 ps.

Design of the Low Noise Amplifier and Mixer Using Newly Bias Circuit for S-band (새로운 바이어스 회로를 적용한 S-band용 저잡음 증폭기 및 믹서의 One-Chip 설계)

  • Kim Yang-Joo;Shin Sang-Moon;Choi Jae-Ha
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.11 s.102
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    • pp.1114-1122
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    • 2005
  • In this paper, the study of a design, fabrication and measurement of the receiver MMIC LNA, mixer for S-band application is described. The LNA is designed by 2-stage common source. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The LNA has 15.51 dB-gain and 1.02dB-Noise Figure at 2.1 GHz. The conversion gain of the mixer is -12 dB, IIP3 is approximately 4.25 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.2[mm]\times1.4[mm]$.

Full CMOS PLC SoC ASIC with Integrated AFE (Analog Frond-End 내장형 전력선 통신용 CMOS SoC ASIC)

  • Nam, Chul;Pu, Young-Gun;Park, Joon-Sung;Hur, Jeong;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.10
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    • pp.31-39
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    • 2009
  • This paper presents the single supply power line communication(PLC) SoC ASIC with built-in analog frond-end circuit. To achieve the low power consumption along with low chip cost, this PLC SoC ASIC employs fully CMOS analog front-end(AFE) and several built-in Regulators(LDOs) powering for Core logic, ADC, DAC and IP Pad driver. The AFE includes RX of pre-amplifier, Programmable gain amplifier and 10 bit ADC and TX of 10bit Digital Analog Converter and Line driver. This PLC Soc was implemented with 0.18um 1 Poly 5 Metal CMOS process. The single power supply of 3.3V is required for the internal LDOs. The total power consumption is below 30mA at standby and 300mA at active which meets the eco-design requirement. The chips size is $3.686\;{\times}\;2.633\;mm^2$.

X-band Low Phase Noise Push-Push Oscillator Using Metamaterial Resonator (Metamaterial 공진기를 이용한 레이더 송. 수신기용 X-대역 고출력. 저위상 잡음 Push-Push 발진기)

  • Kim, Yang-Hyun;Seo, Chul-Hun;Ha, Sung-Jae;Lee, Bok-Hyung
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.12
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    • pp.1-5
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    • 2009
  • In this paper, low phase noise push-push oscillator (OSC) using the metamaterial resonator for missile defense systems and satellite communication was design and implemented. The metamaterial resonator has the large coupling coefficient value, which makes a high Q value, and has reduced phase noise of OSC. The OSC with 1.8 V power supply has phase noise of -117 dBc/Hz @100 kHz in the 12 GHz. When it has been compared with metamaterial resonator and coventional spiral resonator, the reduced Q value has been -29.7 dB and -47.6 dB respectively. This low phase noise OSC using metamaterial resonator could be available to a OSC in X-band.

65 nm CMOS Base Band Filter for 77 GHz Automotive Radar Compensating Path Loss Difference (경로 손실 변화의 보상이 가능한 77 GHz 차량용 레이더 시스템을 위한 65 nm CMOS 베이스밴드 필터)

  • Kim, Young-Sik;Lee, Seung-Jun;Eo, Yun-Seong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.10
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    • pp.1151-1156
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    • 2012
  • In this paper, the baseband filter is proposed in order to maintain a constant sensitivity regardless of distances for 77 GHz automotive radar system. Using existing DCOC loop circuit can remove DC offset and also cancel differences of received power depending on the distance. Measured results show that the maximum gain is 51 dB and high pass cutoff frequency can be tuned from 5 kHz to 15 kHz. The slope of high pass filter can be tuned from -10 to -40 dB/decade for the distance compensation. The measured NF and IIP3 are 26 dB and +4.5 dBm with 4.3 mA at 1.0 V supply voltage, respectively. The fabricated die size $500{\mu}m{\times}1,050{\mu}m$ excluding the in/out pads.

Land Surface Temperature Measurements Using C-Band Radiometer (C-대역 라디오미터를 이용한 지표면 온도 측정)

  • Jang, Tae-Gyeong;Kim, Young-Gon;Woo, Dong-Sik;Son, Hong-Min;Kim, Kang-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.9
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    • pp.1013-1022
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    • 2010
  • In this paper, we propose a C-band radiometer for remote sensing of land surface temperature and present its experiment results using asphalt as target. Total power type is selected for high sensitivity and low power consumption, super-heterodyne type is selected for stable high gain. A radiometer designed at 5.1 GHz to have operating bandwidth of 110 MHz has system gain of 59 dB, noise figure of 2.7 dB and receiving sensitivity of 0.45 K. We have measured surface temperature on asphalt by using implemented system and thermometer. Analysis data of each measurement results show that a radiometer operates linearly with output voltage variation rate of 6 $mV/^{\circ}C$. As a result, we verified validity of a developed C-band radiometer for remote sensing of land surface temperature.

VLSI Design of EPR-4 Viterbi Decoder for Magnetic Disk Read Channel (자기 디스크 출력 채널용 EPR-4 비터비 디코더의 VLSI 설계)

  • ;Bang-Sup Song
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.24 no.7A
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    • pp.1090-1098
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    • 1999
  • In this paper ERP-4 viterbi decoder for magnetic disk read channel is designed. The viterbi decoder consists of ACS circuit, path memory circuit, minimum detection circuit, and output selection circuit. In the viterbi decoder the number of state is reduced from 8 to 6 using (1,7) RLL codes and modulo comparison based on 2's complement arithmetic is applied to handle overflow problem of ACS module. Also to determine the correct symbol values in nonconvergent condition of path memory, pipelined minimum detector which determines path with minimum state metric is used. The EPR-4 viterbi decoder is designed using 0.35${\mu}{\textrm}{m}$ CMOS technology and consists of about 15,300 transistors and has 250 Mbps data rates under 3.3 volts.

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Design of 6bit CMOS A/D Converter with Simplified S-R latch (단순화된 S-R 래치를 이용한 6비트 CMOS 플래쉬 A/D 변환기 설계)

  • Son, Young-Jun;Kim, Won;Yoon, Kwang-Sub
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.33 no.11C
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    • pp.963-969
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    • 2008
  • This paper presents 6bit 100MHz Interpolation Flash Analog-to-Digital Converter, which can be applied to the Receiver of Wireless Tele-communication System. The 6bit 100MHz Flash Analog-to-Digital Converter simplifies and integrates S-R latch which multiplies as the resolution increases. Whereas the conventional NAND based S-R latch needed eight MOS transistors, this Converter was designed with only six, which makes the Dynamic Power Dissipation of the A/D Converter reduced up to 12.5%. The designed A/D Converter went through $0.18{\mu}m$ CMOS n-well 1-poly 6-metal process to be a final product, and the final product has shown 282mW of power dissipation with 1.8V of Supply Voltage, 100MHz of conversion rate. And 35.027dBc, 31.253dB SFDR and 4.8bits, 4.2bits ENOB with 12.5MHz, 50MHz of each input frequency.

The Desing of GaAs MESFET Resistive Mixer with High Linearity (선형성이 우수한 GaAs MESFET 저항성 혼합기 설계)

  • 이상호;김준수;황충선;박익모;나극환;신철재
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.10 no.2
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    • pp.169-179
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    • 1999
  • In this paper, a GaAs MESFET single-ended resistive mixer with high linearity and isolation is designed. The bias voltage of this mixer is applied only gate of GaAs MESFET to use the channel resistance. The LO is applied the gate and the RF is applied the drain through 7-pole hairpin bandpass filter to obtain the proper isolation thru LO-RF. The IF is extracted from the source with short circuit and lowpass filter. Using extracted equivalent circuits for LO and RF, conversion loss is calculated and compared with result of harmonic balance analysis. Measured conversion loss of this S-band down converter mixer is 8.2~10.5dB by considering the measured 3.0~3.4dB RF 7-pole hairpin bandpass filter loss and IP3in is 26.5dBm at Vg=-0.85~-1.0V in distortion performance.

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