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Design of the Low Noise Amplifier and Mixer Using Newly Bias Circuit for S-band  

Kim Yang-Joo (School of Electrical Engineering and Information System, University of Ulsan)
Shin Sang-Moon (School of Electrical Engineering and Information System, University of Ulsan)
Choi Jae-Ha (School of Electrical Engineering and Information System, University of Ulsan)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.16, no.11, 2005 , pp. 1114-1122 More about this Journal
Abstract
In this paper, the study of a design, fabrication and measurement of the receiver MMIC LNA, mixer for S-band application is described. The LNA is designed by 2-stage common source. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The LNA has 15.51 dB-gain and 1.02dB-Noise Figure at 2.1 GHz. The conversion gain of the mixer is -12 dB, IIP3 is approximately 4.25 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.2[mm]\times1.4[mm]$.
Keywords
One-Chip; MMIC; LNA; Mixer; Bias Circuit;
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