• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2000.04a
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• pp.63-68
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• 2000

A very large floating structure has rather small motion characteristics as to the whole body, while the motion at end part of such structure becomes largest due to the elastic motion of the structure. This paper presents on the theoretical result on the relative motion characteristics and green water phenomena of VLFS in waves This phenomena affect not only to strength of the structure but also the determination of depth of structure. To predict motion responses of structure in regular waves, the source-dipole distribution method and F.E.M is used By irregular wave results, the probability of occurrence of green water and response of the structure were calculated.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.6
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• pp.51-58
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• 1995

Major limiting factors in the linear scaling down of the shallow source/drain junction are the boron channeling effect and the Si cosumption phenomenon during silicidation. We can solve these problems by As preamorphization of the predeposited amorphous Si layer. The predeposited amorphous Si layer made the junction depth decrease to nearly the thickness value of the layer and was effectively utilized as the cosumed Si source during Ti silicidation. This method was applied to the actual fabrication of PMOSFET through SES (selectricely etched Si) techology.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.1
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• pp.9-13
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• 1982

The purpose of this experiment is to evaluate the noise dependency on the gate dimensions of the P-ch MOSFET which is fabricated of p+ sourse, drain, and gate electrode doped with PH$_3$ gas in type-N Si sudstrate. Experimental results indicate that: for the constant gate area and reletively thick films, noise level tends to decrease for the W/L ratio over unity, which generally conforms with theoretical observations, but its variation with the change in the thickness of film is less than the theoretically predicted for the W/L ratio below unity.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2000.10a
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• pp.63-67
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• 2000

Up to this day, Most studies of hydroelasticity are inclined to frequency domain atnlysis. Thos amlysis Q the landing, take-4, and dropping of airaqft on a structure. So, the concern of this prrper is a tra a VLFS subjected to dymmic lazd induced by airplane larndirrg and take-off. To predict added mass, dampr exciting force, the source-dipole distribution method were used The responses are accomplished by Fdoimain analysis method is based on Newmark $\beta$ method to pursuit time step pnzcedure taking advantage function for hvdrodvnumic effects.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.110-117
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• 1995

New formulas for the minimum noise figure and the optimum source impedance of microwave FETs are derived using the noise equivalent circuits obtained from the steady-state Nyquist theorem for multi-terminal semiconductor devices. The derived formulas manifest the relationships between the noise sources and the physical parameters of a noise equivalent circuit. Furthermore the formulas can explain the effect of gate leakage current on the minimum noise figure and the optimum source impedance. comparisons with the published experimental data confirm the validity and usability of our formula.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.116-126
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• 1994

In this paper, the switch-level fault simulator for CMOS circuits with a gate-to-drain/source short fault is implemented. A fault model used in this paper is based on the graphical analysis of the electrical characteristics of the faulty MOS devices and the conversion of the faulty CMOS circuit to the equivalent faulty CMOS inverter in order to find its effect on the successive stage. This technique is very simple and has the increased accuracy of the simulation. The simulation result of the faulty circuit using the implemented fault simulator is compared with the result of the SPICE simulation.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.971-973
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• 1999

채널길이에 따른 n-채널과 p-채널 poly-Si TFT's를 제작하고 그 전기적 특성을 분석하였다. n-채널과 p-채널소자는 공통적으로 기생바이폴라트 랜지스터현상(parasitic bipolar transistor action)에 의한 kink 효과, 전하공유(charge sharing)에 의한 문턱전압의 감소, 소오스와 드레인 근처의 결함에 의한 RSCE(reverse short channel effect) 효과, 수직전계에 의한 이동도의 감소, 그리고 avalanche 증식에 의한 S-swing의 감소가 나타났다. n-채널은 p-채널 보다 더 큰 kink, 이동도, S-swing의 변화가 나타났으며, 높은 드레인 전압에서의 문턱전압의 이동은 avalanche 증식(multiplication)에 의한 것이 더 우세한 것으로 나타났다. 누설전류의 경우, 채널 길이가 짧아짐에 따라 n-채널은 큰 증가를 나타냈으나 p-채널의 경우는 변화가 나타나지 않았다.

• Journal of the Society of Naval Architects of Korea
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• v.41 no.1
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• pp.31-39
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• 2004

In this paper, an experimental study on the hydroelastic behaviors of a VLFS with L=5,000m was made considering a breakwater. The principal dimensions of the VLFS model were 9m${\times}$1.8${\times}$0.0108m(L${\times}$B${\times}$D) and the length of breakwater was 12.6m (1.4L). The distance between the VLFS and the breakwater varied from B/2 to 28. The wide tank test results were compared with the numerical predictions and the comparison showed a little gap along its longitudinal axis, in spite of using the very small model size due to the scale 1/555.5

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.112-120
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• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

• Journal of Ocean Engineering and Technology
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• v.16 no.2
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• pp.32-37
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• 2002

Very Large Floating Structures have been planned for effective utilization of ocean space in recent years. The nonerctangular VLFS usually has a control tower to guide airplane securely. This paper presents an effective method for calculating the wave induced hydroelastic responses of VLFS considering the effect of control tower-shapes. The source and dipole distribution method is used to calculate the plate. The rigidity matrix for VLFS is formulated by finite element method using a plate theory. The calculated results for nonerctangular VLFS with a control tower are compared with those for VLFS without a control tower.