• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.1-8
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• 2000

In this paper, design of sense amplifier for a flash memory minimizing bit line disturbance due to common bit line is presented. There is a disturbance problem at output modes by using common bit line, when the external devices access an internal flash memory. This phenomenon is resulted form hot carrier between floating gates and bit lines by thin oxide thickness. To minimize bit line disturbance, lower it line voltage is required and need sense amplifier to detect data existence in lower bit line voltage. Proposed circuits is operated at lower bit line voltage and we fabricated a embedded flash memory MCU using 0.6u technology.

• Journal of IKEEE
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• v.28 no.1
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• pp.1-5
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• 2024

To improve the performance of DRAM, it is essential to reduce sensing failures caused by mismatch in SA. Unlike flip failures, delay failures can be degraded, especially when high-speed operation is required, making it a critical consideration in the design of next-generation memory. While conventional SA operates with all transistors starting amplification simultaneously, SDSA selectively activates only two transistors that output BLB, thus alleviating offset. In this paper, we validate the superior performance of SDSA in mitigating delay failures through simulations. It was confirmed that SDSA exhibits approximately a 90 % reduction in delay failures compared to conventional SA.

• Transactions on Semiconductor Engineering
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• v.2 no.4
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• pp.8-12
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• 2024

This paper presents a software-hardware (SW-HW) co-optimization approach for DRAM inmemory computing, significantly reducing sense amplifier read power in 2T1C cell systems. By transitioning from 2's complement to signed magnitude representation, data '0' prevalence increased from 52% to 73%, achieving a 13% reduction in read power. A novel sense amplifier design incorporating a variable reference voltage contributed a further 15% power reduction. This co-optimization strategy resulted in a total read power decrease of 26% compared to the baseline, demonstrating substantial improvements in energy efficiency for memory-intensive computing environments.

• Journal of IKEEE
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• v.17 no.3
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• pp.260-266
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• 2013

The open bit line is vulnerable to noise compared to the folded bit line when read/write for the DRAM. According to the increasing DRAM densities, the core circuit operating conditions is exacerbated by the noise when it comes to the open bit line 6F2(F : Feature Size) structure. In this paper, the interference effects were analyzed by the data patterns between the bit line by experiments. It was beyond the scope of existing research. 68nm Tech. 1Gb DDR2, Advan Tester used in the experiments. The noise effects appears the degrade of internal operation margin of DRAM. This paper investigates sense amplifier power line splits by experiments. The noise can be improved by 0.2ns(1.3%)~1.9ns(12.7%), when the sense amplifier power lines split. It was simulated by 68nm Technology 1Gb DDR2 modeling.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.6
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• pp.421-430
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• 2003

In the embedded system, EPROM is difficult to replace a mask ROM for the applications using battery, because the low voltage characteristic of an EPROM is inferior to that of a mask ROM. In this paper, the new circuits such as a word line voltage hoosier scheme and a sense amplifier without reference input for an embedded EPROM in MCU are proposed. The circuits can detect bit line voltage a predetermined level, which is caused by the degradation of the battery. We fabricated a MCU embedded 32Kbytes EPROM. The proposed circuits well operated at 1.5V supply voltage and thus the low voltage performance was improved by about 30%.

• Journal of IKEEE
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• v.11 no.4
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• pp.129-136
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• 2007

In this paper, a simple but effective Dataline Redundancy Circuit (DRC) is proposed for a dual-port 1T-SRAM embedded in Display ICs. The DRC designed in the dual-port $320{\times}120{\times}18$-bit 1T-SRAM is verified in a 0.18-um CMOS 1T-SRAM process. In the DRC, because its control logic circuit can be implemented by a simple Shift Logic Circuit (SLC) with only an inverter and a NAND that is much simpler than the conventional, it can be placed in a pitch as narrow as a bit line pair. Moreover, an improved version of the SLC is also proposed to reduce its worst-case delay from 12.3ns to 5.9ns by 52%. By doing so, the timing overhead of the DRC can be hidden under the row cycle time because switching of the datalines can be done between the times of the word line setup and the sense amplifier setup. The area overhead of the DRC is estimated about 7.6% in this paper.