• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.1-6
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• 2010

We report on the electrical properties of Ti/Al/Ni/Au (20 nm/ 150 nm/ 30 nm/ 100 nm) Ohmic contacts and the anisotropic conductivity of n-type ${\alpha}$-plane ([11-20]) GaN grown on $\gamma$-plane ([1-102]) sapphire substrates. The Ti/Al/Ni/Au Ohmic contacts and their sheet resistances are characterized by using the transfer length method (TLM) as a function of azimuthal angles. It is found that the specific contact resistance does not depend on the axis orientation and there are significant electrical anisotropy in ${\alpha}$-plane GaN films on $\gamma$-plane sapphire substrates, and the sheet resistance varies with azimuthal angles. The sheet resistance values in the direction parallel to m-axis [1-100] are 25% ~ 75% lower than those parallel to c-axis [0001] directions. Thus, Basal stacking faults (BSFs) are offered as a feasible source of the anisotropic mobility in defected m-axis direction because the band-edge discontinuities owing to the differential band gap structure.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.4 no.1
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• pp.125-136
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• 1984

In the weled structures, fatigue fracture mainly depends upon crack growth behavior. Specially anisotropy of crack growth orientation and welding direction become important factor of fracture in the welding jone. When fatigue stressed steel welded with nonfatigue stressed steel, at the low stress intensity factor range, residual stress become more important factor of growth behavior then properties of base metal but when the crack growth in the weld metal, toughness of weld metal become the most important factor. Especially nonhomgeniety of toughness for the weld metal make more scatter the relations of $da/dN-{\Delta}K$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.127-131
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• 2003

High quality zincblende ZnTe(100) epilayers have been grown on semi-insulating $CaAs(100\pm2^{\circ})$substrate by hot-wall epitaxy. To grow high quality ZnTe epilayers, the growth temperature dependence of the surface topography, the growth rate, and the crystalline properties were investigated. From the photoluminescence measured at 10 K, the light hole and heavy hole free exciton emissions splitted by thermal tensile strain were observed and their first excited state emissions were also measured. The low temperature doublet of the heavy hole free exciton is because of the energy separation between longitudinal exciton and transverse exciton due to exciton-polariton coupling.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.3B
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• pp.239-253
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• 2006

For guaranteeing the international competitive power of SW industry that is the core industry for the future, the training of SW technical manpower as an architect is needed. They must confront the change of worldwide technology and also lead the design and analysis of SW industry for the future. However, SW technical manpower based on regular career tends to change his employment as a general manager in current status. For solve this situation and reconsider the quality level of SW technical manpower, we need to propose the systematic and effective growth direction for them. Therefore, we propose the systematic and effective growth direction for domestic SW technical manpower and a plan to be realized by suggesting the carrier path of high level SW analysis/design manpower in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.123-126
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• 2010

This paper attempts to conceptually examine the factors affecting the growth potential of WiBro in the Korean communication market. The results of the paper implies that the WiBro service operators' business intentions mainly affect the its diffusion negatively and the convergence service combining WiBro with other heterogeneous service including Telematics services might enable WiBro to successfully grow compensating the current limitation of WiBro.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.22-26
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• 2001

Microstructures of AlN thin films on Si substrates grown by plasma assisted molecular beam epitaxy were analyzed with various growth temperatures and substrate orientations. Reflection high energy electron diffraction (RHEED) patterns were checked for the in-situ monitoring of the growth condition. X-ray diffraction(XRD), double crystal X-ray diffraction (DCXD), and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films after growth. On Si(100) sub-strates, AlN thin films were grown mostly along the hexagonal c-axis orientation at temperature higher than $850^{\circ}C$. On the other hand the AlN films on Si(111) were epitaxially grown with directional coherencies in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112). The microstructure of AlN thin films on Si(111) substrates, with a full width at half maximum of almost 3000 arcsec at 2$\theta$=$36.2^{\circ}$, showed that the single crystal films were grown, even if they includ a lot of crystal defects such as dislocations and stacking faults.

• KDI Journal of Economic Policy
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• v.15 no.2
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• pp.161-179
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• 1993

본고는 생산성(生産性)과 성장률(成長率)간의 누적적(累積的) 성장과정(成長過程)이라 불리는 Kaldor의 축약(縮約)모델을 구조(構造)모델로 확대하여 우리나라의 성장과정을 분석한다. 우리나라는 저임금(低賃金)을 통한 수출주도형(輸出主導型) 경제성장을 추구해 왔으나 87년 이후로 고임금화(高賃金化) 및 수출역할(輸出役割)의 감소(減少)라는 구조적(構造的) 위기(危機)를 겪고 있다. 과거 선진제국에서 고도성장을 가능케 하였던 "포디즘"적 성장체제는 이러한 위기(危機)를 극복하는 데 도움이 안된다. 왜냐하면 오늘날과 같이 국가간 상호의존성(相互依存性)이 크게 증대되고 국가간(國家間) 경쟁(競爭)이 심화되는 상황(globalization)하에서는 국내시장(國內市場)과 해외시장(海外市場)간의 구분 자체가 의미를 잃어가고 있으며, 이에 따라 수출(輸出)과 내수(內需)가 독립적일 수 없게 되었기 때문이다. 우리나라가 어떠한 성장양식으로 이행하든 그 방향은 세계시장에서의 경쟁력강화(競爭力强化)와 일치해야 하며, 이러한 관점에서 고성장(高成長)을 유지하기 위해서는 생산성향상(生産性向上)이 소비증대(小費增大)가 아니라 수출증대(輸出增大)로 이어지도록 해야 할 것이다.

• Journal of Aerospace System Engineering
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• v.17 no.2
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• pp.1-8
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• 2023

Power transmission shafts in rotary wing aircraft use a hollow shaft to reduce weight. We can apply linear elastic fracture mechanics to predict crack propagation behavior. This paper predicted crack growth life of a hollow shaft with a circumferential through-type crack by finite element analysis. A 2D finite element model was created by applying a torsion and forming elements considering cracks. We defined the initial crack length and performed the finite element analysis by increasing the crack length to derive stress intensity factor at crack tips. We defined the length just prior to the stress intensity factor exceeding the fracture toughness as the crack limit length. We calculated the crack limit length using a handbook and numerically integrated the crack growth rate equation to derive growth life of each crack. The growth life of each crack was compared to verify the proposed finite element analysis method.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.125-125
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• 2010

극성 [0001] 방향으로 성장된 질화물 기반의 LED (light emitting diode) 는 분극현상에 의해 발생하는 강한 내부 전기장의 영향을 받게 된다. 이러한 내부 전기장은 양자우물 내의 전자와 정공의 공간적 분리를 야기하고 quantum confined Stark effect (QCSE)에 의한 발광 파장의 적색 편이가 발생하며 양자효율의 저하를 가져오게 된다. 이러한 문제를 해결하기 위해 InGaN/GaN이나 AlGaN/GaN 양자 우물구조를 GaN의 m-plane (1$\bar{1}$00) 이나 a-plane (11$\bar{2}$0) 등 비극성면 위에 성장하려는 시도를 하고 있다. 그러나 비극성 면의 비등방성 (anisotropy) 으로 인하여 결정성이 높은 비극성 GaN을 성장하는 데에는 많은 어려움이 있다. GaN 층의 표면을 평탄화하고 결정성을 향상시키기 위해서 저온 GaN 또는 AlN 버퍼층을 성장하는 2단계 방법이나 고온 버퍼층을 이용하여 성장하는 연구들이 많이 진행되고 있다. 본 연구에서는 고온 GaN 버퍼층을 이용하여 기존의 2단계 성장과정을 단순화한 비극성 a-plane GaN을 r-plane 사파이어 기판위에 유기금속 화학증착법 (MOCVD)으로 성장하였다. 사파이어 기판위에 AlN 층을 형성하기 위한 nitridation 과정 후 1030 도에서 두께 45 ~ 800 nm의 고온 GaN 버퍼층을 성장하고 총 박막 두께가 2.7 ~ 3 um 가 되도록 a-plane GaN을 성장하여 표면 양상의 변화와 결정성을 확인하였다. 또한 a-plane GaN 박막 성장 시에 성장 압력을 100 ~ 300 torr 로 조절하며 박막 성장의 변화 양상을 관찰하였다. 고온 GaN 버퍼층 성장 두께가 감소함에 따라 결정성은 증가하였으나 표면의 삼각형 형태의 pit 밀도가 증가함을 확인하였다. 또한 성장 압력이 감소함에 따라 표면 pit은 감소하였으나 결정성도 감소하는 것을 확인하였다. 성장 압력과 버퍼층 성장 두께를 조절하여 표면에 삼각형 형태의 pit이 존재하지 않는 RMS roughness 0.99 nm, 관통전위밀도 $1.78\;{\times}\;10^{10}/cm^2$, XRD 반가폭이 [0001], [1$\bar{1}$00] 방향으로 각 798, 1909 arcsec 인 a-plane GaN을 성장하였다. 이 연구를 통해 고온 GaN 버퍼 성장방법을 이용하여 간소화된 공정으로 LED 소자 제작에 사용할 수 있는 결정성 높은 a-plane GaN을 성장할 수 있는 가능성을 확인하였다.