Growth and characterization of the high quality ZnTe epilayers for opto-electronic devices
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정양준
(목포대학교 물리학과)
김대중 (목원대학교 자연과학연구소) 유영문 (목원대학교 자연과학연구소) 최용대 (목원대학교 광전자물리학과) |
1 |
Photoluminescence characteristics of ZnTe epilayers
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DOI ScienceOn |
2 |
Resonant exciation of intrinsic and shallow trap luminescence in MOVPE grown ZnTe Layers
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DOI ScienceOn |
3 |
Photoluminescence properties of MOVPE grown ZnTe layers on(100) GaAs and (100) GaSb
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DOI |
4 |
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5 |
Substrate/layer relationships in Ⅱ-VIs
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DOI ScienceOn |
6 |
Raman and modulated reflectivity spectra of a strained pseudomorphic ZnTe epilayer on InAs under pressure
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7 |
Growth of highpurity ZnSe by sublimation THM and the characteristics of the Y and Z deep-level emission lines
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DOI ScienceOn |
8 |
Effects of thermal strain on the optical properties of heteroepitaxial ZnTe
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9 |
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10 |
Characterization and growth of high quality ZnTe epilayers by hot-wall epitaxy
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DOI ScienceOn |
11 |
Polarition reflectance and photoluminescence in high-purity GaAs
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12 |
Investigation of strain in metalorganic vapor-phase epitaxy grown ZnTe layers by optical methods
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DOI |
13 |
Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs
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DOI ScienceOn |
14 |
Piezo-electroreflectance in Ge, GaAs, and Si
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DOI |
15 |
Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour deposition
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DOI ScienceOn |
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