• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.639-647
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• 2019

Recently, as the semiconductor integration technology due to miniaturization and high density of electronic equipment have developed, it is importantly recognized the application of thermal control system in order to release inner heat generated from chips, modules, In this study, we considered the heat transfer and pressure drop characteristics in a horizontal channel with four blocks using k-${\omega}$ SST turbulence model During CFD (Computational Fluid Dynamics) analysis, the parameters applied block width, block height, heat source and turbulence generator placement etc. As the boundary conditions of analysis, the channel inlet temperature and flow velocity were respectively 300 K and 3.84 m/s, the heat flux was $358W/m^2$. As a result, the heat transfer performance was decreased as the block width ratio (w/h) was increased, while it was increased as the block height ratio (h/w) was increased. In addition, as the arrangement of heat source size was increased to high heat flux from low heat flux, it was influenced by heat source size and the heat transfer coefficient showed a tendency to increase, When the turbulence generator was installed in the upper part of block No. 1 position the closely to the channel entrance, the heat transfer characteristics was greatly influenced on the whole of four heating blocks. and in oder to consider the pressure drop characteristics, we are able to select the most appropriate turbulence generator's position.

• Journal of Adhesion and Interface
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• v.22 no.2
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• pp.57-62
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• 2021

Recently, the atomically thin two-dimensional transition-metal dichalcogenides (TMDs) have received considerable attention for the application to next-generation semiconducting devices, owing to their remarkable properties including high carrier mobility. However, while a technique for growing graphene is well matured enough to achieve a wafer-scale single crystalline monolayer film, the large-area growth of high quality TMD monolayer is still a challenging issue for industrial application. In order to enlarge the size of single crystalline MoS₂ monolayer, here, we systematically investigated the effect of process parameters in molten-salt-assisted chemical vapor deposition method. As a result, with optimized process parameters, we found that single crystalline monolayer MoS₂ can be grown as large as 420 ㎛.

• Journal of the Korea Institute of Building Construction
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• v.21 no.5
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• pp.459-468
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• 2021

Blocking electromagnetic waves on the exterior walls of buildings effectively reduces the intensity of electromagnetic fields in buildings, which leads to attenuation of electromagnetic disturbances, so there is a great interest in developing technologies. In this study, SiC by-products and graphite generated in the semiconductor field were selected and mixed into mortar after pretreatment such as pulverization to evaluate their physical properties and electromagnetic wave shielding performance. Considering the economic efficiency of each shielding material, only 10% volume of the outermost side of the experiment was mixed with each shielding material to evaluate the shielding performance. The shielding performance was predicted when the experiment was manufactured by mixing the shielding material with the entire volume of the experiment using the shielding effect evaluation formula. The results of the experiment showed that the shielding performance was up to 20 dB when SiC grains were mixed with shielding materials, the shielding performance was up to 18 dB when graphite powder was mixed with shielding materials, and the shielding performance was up to 28 dB when SiC powder was mixed with shielding materials, and the shielding performance was close to 30 dB, which is known to have a shielding rate of 99.9%.

• The Journal of the Korea Contents Association
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• v.21 no.2
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• pp.85-99
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• 2021

Graphene, called the "dream material" is drawing attention as a groundbreaking new material that will lead the era of the 4th Industrial Revolution. Graphene has high strength, excellent electrical and thermal conductivity, excellent optical permeability, and excellent gas barrier properties. In this paper, as the South Korean government recently announced Green New Deal and Digital New Deal policy, we analyze graphene technology, which is also attracting attention for its application to Corona 19 biosensor, to understand its national R&D trend and knowledge structure, and to explore the possibility of its application. Firstly, 4,054 cases of national R&D project information for the last 10 years are collected from the National Science & Technology Information Service(NTIS) to analyze the trend of graphene-related R&D. Besides, projects classified as green technology are analyzed concerning the government's Green New Deal policy. Secondly, text mining analysis is conducted by collecting 500 recent graphene-related articles from e-newspapers. According to the analysis, the field with the largest number of projects was found to be high-efficiency secondary battery technology, and the proportion of total research funds was also the highest. It is expected that South Korea will lead the development of graphene technology in the future to become a world leader in diverse industries including electric vehicles, cellular phone batteries, next-generation semiconductors, 5G, and biosensors.

• Journal of the Korean Society of Radiology
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• v.14 no.7
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• pp.849-856
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• 2020

In the gamma-ray energy spectrum study, nuclide analysis through energy analysis is very important. High-purity Ge detectors, which are commonly used for gamma-ray energy measurements, are commonly used because of their high energy resolution and relatively high detection efficiency. However, in order to maintain a high energy resolution, the semiconductor detector has a problem in that it is difficult to maintain the original performance if the noise generated from the surrounding environment is not effectively blocked, and the effect of the expensive device is not achieved. Therefore, in this study, ground loop isolator (NEXT-001HDGL) was used to remove the electrical noise generated from the detector. In order to test the effect of improving energy resolution, HPGe detection device newly installed in the proton accelerator KOMAC was used. In the case of gamma-ray energy 2614 keV, the energy resolution was improved from (0.16 ± 0.02) % to (0.11 ± 0.01) %, and in the case of gamma-ray energy 662 keV of 137Cs isotope, the energy resolution was improved from (0.72 ± 0.07) % to (0.27 ± 0.03) %. This result is considered to be very useful for the gamma ray spectrum study using the HPGe detection equipment of KOMAC(Korea Multi-Purpose Accelerator Complex).

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.71-79
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• 2021

In this study, we have successfully fabricated the Sn-Ni paste and evaluated the bonding properties for high-temperature endurable EV (Electric Vehicle) power module applications. From evaluating of the micro-structural changes in the TLPS (Transient Liquid Phase Sintering) joints with Sn and Ni contents in the Sn-Ni pastes, a lack of Ni powders and Ni particle agglomerations by Ni surplus were observed in the Sn-20Ni and Sn-50Ni joints (in wt.%), respectively. In contrast, relatively dense microstructures are observed in the Sn-30Ni and Sn-40Ni TLPS joints. From differential scanning calorimetry (DSC) thermal analysis results of the fabricated Sn-Ni paste and TLPS bonded joints, we confirmed that the complete reactions of Sn with Ni to form Ni-Sn intermetallic compounds (IMCs) at bonding temperatures occurred, and there is no remaining Sn in the joints after TLPS bonding. In addition, the interfacial reactions and IMC phase changes of the Sn-30Ni joints under various bonding temperatures were reported, and their mechanical shear strength were investigated. The TLPS bonded joints were mainly composed of residual Ni particles and Ni₃Sn₄ intermetallic phase. The average shear strength tended to increase with increasing bonding temperature. Our results indicated a high shear strength value of approximately 30 MPa at a bonding temperature of 270 ℃ and a bonding time of 30 min.

• Applied Chemistry for Engineering
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• v.22 no.1
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• pp.104-108
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• 2011

In the non-conductive adhesives (NCAs) for adhesion of micro electro mechanical system (MEMS), there are some problems such as delamination and cracking resulting from the large differences of coefficients of thermal expansion (CTE) between NCAs and substrates. So, the addition of inorganic particles such as silica and nano clay to the CTEs composit have been applied to reduce the CTEs of the adhesives. Additions of the flexibilizers such as siloxanes have also been performed to improve the flexibility of epoxy composite. Amino modified siloxane (AMSs) were used to improve compatibility between epoxy and siloxane. In this study, glass transition temperatures (Tg) and moduli of those composites were measured to confirm the effects of AMS with two different equivalents on thermal/mechanical properties of AMS/epoxy composites. Tg of KF-8010/epoxy composites decreased from 148 to $122^{\circ}C$ and those of X-22-161A/epoxy composites decreased from 148 to $121^{\circ}C$. Moduli of KF-8010/epoxy composites decreased from 2648 to 2143 MPa by adding KF-8010 and moduli of X-22-161A/epoxy composites decreased from 2648 to 2014 MPa. In short, using long Si-O chain AMS leads to a greater decrease in moduli. However, haven't showed significant differences in Tg's.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.551-554
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• 2011

One of the key issues in the research of organic field-effect transistors (OFETs) is the low-voltage operation. To address this issue, we synthesized poly(styrene-r-benzocyclobutene-r-methyl methacrylate) (P(S-r-BCB-r-MMA)) as a thermally cross-linkable gate dielectrics. The P(S-r-BCB-r-MMA) showed high quality dielectric properties due to the negligible volume change during the cross-linking. The pentacene FETs based on the 34 nm-thick P(S-r-BCB-r-MMA) gate dielectrics operate below 5 V. The P(S-r-BCB-r-MMA) gate dielectrics yielded high device performance, i.e. a field-effect mobility of $0.25cm^2/Vs$, a threshold voltage of -2 V, an sub-threshold slope of 400 mV/decade, and an on/off current ratio of ${\sim}10^5$. The thermally cross-linkable P(S-r-BCB-r-MMA) will provide an attractive candidate for solution-processable gate dielectrics for low-voltage OFETs.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1208-1214
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• 2018

The one-step spin coating method is reported as an excellent thin film process because it can be easily used to fabricate high-quality methyl-ammonium lead tri-iodide ($MAPbI_3$) perovskite layers. One of the important things in the one-step spin coating method towards obtaining high-quality $MAPbI_3$ layers is the anti-solvent (AS) engineering, which consists of an one-step deposition of the $MAPbI_3$ film and dripping of the AS. The properties of the $MAPbI_3$ layer were found to be strongly influenced by the amount, dispensing speed, and spraying time of the AS solution. The $MAPbI_3$ solution was prepared by dissolving lead iodide and methyl-ammonium iodide in N,N-dimethylformamide and adding N,N-dimethyl sulfoxide. Diethyl ether (DE) was used for the AS solution. The results indicate that a $MAPbI_3$ layer appropriately sprayed with DE is beneficial for improving film quality and device efficiency because nucleation of $MAPbI_3$ layer is affected by the characteristics of DE, which affect the film's crystallinity, density, and surface morphology. The $MAPbI_3$ layer, which was optimized by using 0.7 mL of DE, a 3.03 mL/sec dispensing speed, and a 7 second time to spray after spinning showed the best efficiency of 13.74%, which was reproducible.

• Korean Journal of Metals and Materials
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• v.48 no.5
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• pp.456-461
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• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.