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http://dx.doi.org/10.3938/NPSM.68.1208

Properties of Perovskite Materials and Devices Fabricated Using the Solvent Engineered One-Step Spin Coating Method  

Oh, Jungseock (Department of Physics, Kunsan National University)
Kwon, Namhee (Department of Physics, Kunsan National University)
Cha, DeokJoon (Department of Physics, Kunsan National University)
Yang, JungYup (Department of Physics, Kunsan National University)
Abstract
The one-step spin coating method is reported as an excellent thin film process because it can be easily used to fabricate high-quality methyl-ammonium lead tri-iodide ($MAPbI_3$) perovskite layers. One of the important things in the one-step spin coating method towards obtaining high-quality $MAPbI_3$ layers is the anti-solvent (AS) engineering, which consists of an one-step deposition of the $MAPbI_3$ film and dripping of the AS. The properties of the $MAPbI_3$ layer were found to be strongly influenced by the amount, dispensing speed, and spraying time of the AS solution. The $MAPbI_3$ solution was prepared by dissolving lead iodide and methyl-ammonium iodide in N,N-dimethylformamide and adding N,N-dimethyl sulfoxide. Diethyl ether (DE) was used for the AS solution. The results indicate that a $MAPbI_3$ layer appropriately sprayed with DE is beneficial for improving film quality and device efficiency because nucleation of $MAPbI_3$ layer is affected by the characteristics of DE, which affect the film's crystallinity, density, and surface morphology. The $MAPbI_3$ layer, which was optimized by using 0.7 mL of DE, a 3.03 mL/sec dispensing speed, and a 7 second time to spray after spinning showed the best efficiency of 13.74%, which was reproducible.
Keywords
Organic-inorganic hybrid perovskite; Semiconductor devices; Photovoltaic devices; Anti-solvent engineering;
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