• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.4
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• pp.33-41
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• 2014

This paper presents an effective memory access method for a high-speed data transfer on mobile systems using a direct memory access controller that considers the characteristics of a multi-port memory controller. The direct memory access controller has an integrated channel management function to control multiple direct memory access channels. The channels are physically separated and operate independently from each other. Experimental results show that the proposed direct memory access method improves the transfer performance by up to 72% and 69% on read and write transfer cycles, respectively. The total number of transfer cycles of the proposed method is 63% less than in a commercial method under 4-channel access.

• Journal of Digital Contents Society
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• v.15 no.5
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• pp.631-642
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• 2014

The main memory DBMS is operated which the contents of the table that resides on a disk at the same time as the drive is in the memory. However, because the main memory DBMS stores the data and transaction log file using the disk file system, there are a limit to the speed at which the CPU accesses the memory. In this paper, I evaluated the performance through analysis of the application side difference the technology that has been implemented in Altibase system of main memory DBMS and Sybase of disk-based DBMS. When the application performance of main memory DBMS is in comparison with the disk-based DBMS, the performance of main memory DBMS was outperformed 1.24~3.36 times in the single soccer game, and was outperformed 1.29~7.9 times in the soccer game / special soccer. The result of sale transaction response time showed a fast response time of 1.78 ~ 6.09 times.

• Journal of the Korea Society of Computer and Information
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• v.16 no.10
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• pp.1-10
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• 2011

There are the large overhead of block erase and page write operations in NAND flash memory, though it has low power consumption, cheap prices and a large storage. Due to the physical characteristics of NAND flash memory, overwrite operations are not permitted at the same location, so rewriting operation require after erase operation. it cause performance decrease of NAND flash memory. Using SRAM buffer in traditional NAND flash memory, it can not only reduce effective write operation but also guarantee fast memory access time. In this paper, we proposed the small SRAM buffer management system for reducing overhead of NAND flash memory, that is, erase and write operations. The proposed buffer system in a NAND flash memory consists of two parts, i.e., a fully associative temporal buffer with the small fetching block size and a fully associative spatial buffer with the large fetching block size. The temporal buffer have small fetching blocks that referenced from spatial buffer. When it happen write operations or erase operations in NAND flash memory, the related fetching blocks in temporal buffer include a page or a block are written in NAND flash memory at the same time. The writing and erasing counts in NAND flash memory can be reduced. According to the simulation results, although we have high miss ratios, write and erase operations can be reduced approximatively 58% and 83% respectively. Also the average memory access times are improved about 84% compared with the fully associative buffer with two sizes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.101-109
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• 2009

Generally, depth cache and pixel cache of 3D graphics are designed by using write-back scheme for efficient use of memory bandwidth. Also, there are write after read operations of same address or only write operations are occurred frequently in 3D graphics cache. If a cache miss is detected, an access to the external memory for write back operation and another access to the memory for handling the cache miss are operated simultaneously. So on frequent cache miss situations, as the memory access bandwidth limited, the access time of the external memory will be increased due to memory bottleneck problem. As a result, the total performance of the processor or the IP will be decreased, also the problem will increase peak power consumption. So in this paper, we proposed a novel early write back cache architecture so as to solve the problems issued above. The proposed architecture controls the point when to access the external memory as to copy the valid data block. And this architecture can improve the cache performance with same hit ratio and same capacity cache. As a result, the proposed architecture can solve the memory bottleneck problem by preventing intensive memory accesses. We have evaluated the new proposed architecture on 3D graphics z cache and pixel cache on a SoC environment where ARM11, 3D graphic accelerator and various IPs are embedded. The simulation results indicated that there were maximum 75% of performance increase when using various simulation vectors.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.1
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• pp.175-182
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• 2011

In this paper, we implemented a high-performence memory controller which can accommodate processing blocks(multiple masters) in SoC for video signal processing. The memory controller is arbitrated by the internal arbiter which receives request signals from masters and sends grant and data signals to masters. The designed memory controller consists of Master Selector, Mster Arbiter, Memory Signal Generator, Command Decoder, and memory Signal Generator. It was designed using VHDL, and verified using the memory model of SAMSING Inc. For FPGA synthesis and verification, Quartus II of ATERA Inc. was used. The target device is Cyclone II. For simulation, ModelSim of Cadence Inc was used. Since the designed H/W can be stably operated in 174.28MHz, it satisfies the specification of SDRAM technology.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.45 no.2
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• pp.61-70
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• 2008

Dynamic memory allocators are used for embedded systems to increase flexibility to manage unpredictable inputs and outputs. As embedded systems generally run continuously during their whole lifetime, fragmentation is one of important factors for designing the memory allocator. To minimize fragmentation, a budgeted memory allocator that has dedicated storage for predetermined objects is proposed. A budgeting method based on a mathematical analysis is also presented. Experimental results show that the size of the heap storage can be reduced by up to 49.5% by using the budgeted memory allocator instead of a state-of-the-art allocator. The reduced fragmentation compensates for the increased code size due to budgeted allocator when the heap storage is larger than 16KB.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.1
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• pp.149-153
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• 2020

This paper presents a new page placement policy for DRAM/NVRAM hybrid main memory in smartphones. Unlike previous studies on hybrid memory systems, this paper performs the placement of pages based on the offline analysis of memory access behaviors as smartphone's memory accesses are skewed to a certain address ranges, which is consistent regardless of smartphone applications, specially for write operations. Thus, we aim at reducing the write traffic to NVRAM by the offline analysis results. Experimental results show that the proposed policy reduces the write traffic to NVRAM by 61% on average without performance degradations.

• Journal of Korea Multimedia Society
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• v.12 no.2
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• pp.165-177
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• 2009

Embedded database systems (EDBMS) based on NAND flash memories are widely adopted for logging data on sensor nodes. Since write and erase operations of a flash memory are time consuming compared to read operations and wear memory cells, it is important to reduce these operations to enhance the EDBMS performance and to extend the memory life. In this paper, we propose a delayed write scheme to archive this goal. Proposed scheme stores updated parts of database pages into delayed write records to reduce the database page writes. By doing that, it decreases write and erase operations on a flash memory. Therefore, the proposed scheme enhances the logging performance of a write-intensive EDBMS on a sensor node and extends the flash memory life.

• Journal of KIISE:Computer Systems and Theory
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• v.35 no.6
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• pp.284-292
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• 2008

The density of Memory has been increased by great challenge for memory technology; therefore, elements of memory become more smaller than before and the sensitivity to faults increases. As a result of these changes, memory testing becomes more complex. In addition, as the number of storage elements per chip increases, the test cost becomes more remarkable as the cost per transistor drops. Recent development in system-on-chip(SoC) technology makes it possible to incorporate large embedded memories into a chip. However, it also complicates the test process, since usually the embedded memories cannot be controlled from the external environment. We present a ARM processor-programmable built-in self-test(BIST) scheme suitable for embedded memory testing in the SoC environment. The proposed BIST circuit can be programmed vis an on-chip microprocessor.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.253-261
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• 2008

Programmable metallizaton cell (PMC) memory device has been known as one of the next generation non-volatile memory devices, because it includes non-volatility, high speed and high ON/OFF resistance ratio. This paper reviews the operation principle of the device. Besides, the recent research results of professor Kozicki who firstly invented the device and investigated it for the memory applications, NEC corporation which studied it for the FPGA (field programmable gate array) switch applications, ETRI and chungnam national university which examined Te-based devices are introduced.