• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.17-24
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• 2008

Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $150^{\circ}C,\;5{\times}10^4\;A/cm^2$ conditions, respectively, in order to compare the growth kinetics of intermetallic compound(IMC) in Cu pillar bump. The quantitative interfacial adhesion energy with annealing was measured by using four-point bending strength test in order to assess the effect of IMC growth on the mechanical reliability of Cu pillar bump. Only $Cu_6Sn_5$ was observed in the Cu pillar/Sn interface after reflow. However, $Cu_3Sn$ formed and grew at Cu pillar/$Cu_6Sn_5$ interface with increasing annealing and stressing time. The growth kinetics of total($Cu_6Sn_5+Cu_3Sn$) IMC changed when all Sn phases in Cu pillar bump were exhausted. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. The quantitative interfacial adhesion energy after 24h at $180^{\circ}C$ was $0.28J/m^2$ while it was $3.37J/m^2$ before annealing. Therefore, the growth of IMC seem to strongly affect the mechanical reliability of Cu pillar bump.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.65-70
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• 2008

The mechanical shear strength of BGA(Ball Grid Array) solder joints under high impact loading was investigated. The Sn-37Pb solder balls with a diameter of $500{\mu}m$ were placed on the pads of FR-4 substrates with ENIG(Electroless Nickel Immersion Gold) surface treatment and reflowed. For the High Temperature Storage(HTS) test, the samples were aged a constant testing temperature of $120^{\circ}C$ for up to 250h. After the HTS test, high speed shear tests with various shear speed of 0.01, 0.1, 1, 3 m/s were conducted. $Ni_3Sn_4$ intermetallic compound(IMC) layer was observed at the solder/Ni-P interface and thickness of IMC was increased with aging process. The shear strength increased with increasing shear speed. The fracture surfaces of solder joints showed various fracture modes dependent on shear speed and aging time. Fracture mode was changed from ductile fracture to brittle fracture with increasing shear speed.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.799-806
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• 2000

Cu$_{6}$Sn$_{5}$-dispersed 63Sn-37Pb solder bumps of 760$\mu\textrm{m}$ size were fabricated on Au(0.5$\mu\textrm{m}$)/Ni(5$\mu\textrm{m}$)/Cu(27$\pm$20$\mu\textrm{m}$) BGA substrates by screen printing process, and their shear strength were characterized with variations of dwell time at reflow peak temperature and aging time at 15$0^{\circ}C$ . With dwell time of 30 seconds at reflow peak temperature, the solder bumps with Cu$_{6}$Sn$_{5}$ dispersion exhibited higher shear strength than the value of the 63Sn-37Pb solder bump. With increasing the dwell time longer than 60 seconds, however the shear strength of the Cu$_{6}$Sn$_{5}$-dispersed solder bumps became lower than that the 63Sn-37Pb solder bumps. The failure surface of the solder bumps could be divided into two legions of slow crack propagation and critical crack propagation. The shear strength of the solder bumps was inversely proportional to the slow crack propagation length, regardless of the dwell time at peak temperature, aging time at 150 $^{\circ}C$ and the volume fraction of Cu$_{6}$Sn$_{5}$ dispersion.> 5/ dispersion.

• Korean Chemical Engineering Research
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• v.44 no.2
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• pp.160-165
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• 2006

A Pd-Cu-Ni alloyed hydrogen membrane has fabricated on porous nickel support formed by nickel powder. Porous nickel support made by sintering shows a strong resistance to hydrogen embrittlement and thermal fatigue. Plasma surface modification treatment is introduced as pre-treatment process instead of conventional HCl wet activation. Nickel was electroplated to a thickness of $2{\mu}m$ in order in to fill micropores at the nickel support surface. Palladium and copper were deposited at thicknesses of $4{\mu}m$ and $0.5{\mu}m$, respectively, on the nickel coated support by DC sputtering process. Subsequently, copper reflow at $700^{\circ}C$ was performed for an hour in $H_2$ ambient. And, as a result PdCu-Ni composite membrane has a pinhole-free and extremely dense microstructure, having a good adhesion to the porous nickel support and infinite hydrogen selectivity in $H_2/N_2$ mixtures.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.163-169
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• 2019

Sn-Pb solder alloys in electronics rapidly has been replaced to Pb free solder alloys because of various environmental regulations such as restriction of hazardous substances directive (RoHS), European Union waste electrical, waste electrical and electronic equipment (WEEE), registration evaluation authorization and of chemicals (REACH) etc. Because Sn58%Bi (in wt.%) solder alloy has low melting point and higher mechanical properties than that of Sn-Pb solder, it has been studied to manufacture electronic components. However, the reliability of Sn58%Bi solder could be lowered because of the brittleness of Bi element included in the solder alloy. Therefore, we observed the microstructures of Sn58%Bi composite solders with various contents of Sn-decorated multiwalled carbon nanotube (Sn-MWCNT) particles and evaluated bonding strength of the FR-4 components assembled with Sn58%Bi composite solder. Also, microstructures and bonding strengths of the Sn58%Bi composite solder joints were evaluated with the number of reflows from 1 to 7 times, respectively. Bonding strengths and fracture energies of the Sn58%Bi composite solder joints were measured by die shear test. Microstructures and fracture modes were observed with scanning electron microscope (SEM). Microstructures in the Sn58%Bi composite solder joints were finer than that of only Sn58%Bi solder joint. Bonding strength and fracture energy of Sn58%Bi composite solder including 0.1 wt.% of Sn-decorated MWCNT particles increased up to 20.4% and 15.4% at 5 times in reflow, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.43-49
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• 2019

In this study, a new approach using graphene oxide (GO) powder-composited Sn-3.0Ag-0.5Cu(in wt.%) solder paste for improving the bending reliability of solder joints between a flexible substrate and small outline package (SOP) was suggested. The GO addition slightly affected the melting temperature, however, the change in the melting temperature was not significant. Meanwhile, we observed the addition of GO could suppress IMC growth and IMC thickness of solder joint during the reflow process. Moreover, the cyclic bending test was also performed for evaluation of reliability in solder joint and we could improve the cyclic bending reliability of solder joint by adding GO powders. For 0.2 wt.% of GO added to the solder joint, the bending lifetime was increased to 20% greater than that without GO. Pull strength and ductility of the solder joint with GO were also higher than those of the joint without GO and it was assumed that this effect by adding GO could contribute to improve cyclic bending reliability of solder joint.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.2
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• pp.71-76
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• 2019

Recently, the demand of labels for product management is increasing, as the automation system becomes more common. the development of functional labels which can be used in various environments has been rapidly proceeded. In the case of a printed circuit board, barcode labels with thermal and chemical stability are generally used due to a high temperature process around $300^{\circ}C$ and chemical cleaning in the manufacturing process. However, the yellowing phenomenon of labels that can lower the resolution of printed barcode image still needs to be prevented. In this study, we prepared a composite coating layer using a silica inorganic binder and a titanium dioxide white pigment, and developed a functional labels with thermal and chemical stability. The silica inorganic binder prepared by sol-gel process was confirmed to show excellent adhesion and abrasion resistance with the polyimide film. The white coating layer could be formed on the polyimide film with mixing the silica inorganic binder and titanium dioxide white pigment. The prepared coating layer showed excellent whiteness and glossiness above $400^{\circ}C$. The excellent chemical stability of the coating layer was also confirmed by the chemical treatment with acidic (pH 1.6) and basic (pH 13.6) cleaners.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.25-29
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• 2022

Recently, the importance of electronic packaging technology has been attracting attention, and heterogeneous integration technology in which chips are stacked out-of-plane direction is being applied to the electronic packaging field. The 2.5D integration circuit is a technology for stacking chips using an interposer including TSV, and is widely used already. Therefore, it is necessary to make the interposer mechanically reliable in the packaging process that undergoes various thermal processes and mechanical loadings. Considering the structural characteristics of the interposer on which several thin films are deposited, thermal stress due to the difference in thermal expansion coefficients of materials can have a great effect on reliability. In this study, the mechanical reliability of the metal pad for wire bonding on the silicon interposer against thermal stress was evaluated. After heating the interposer to the solder reflow temperature, the delamination of the metal pad that occurred during cooling was observed and the mechanism was investigated. In addition, it was confirmed that the high cooling rate and the defect caused by handling promote delamination of the metal pads.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.37-42
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• 2022

Recently, the semiconductor package structures are becoming thinner and more complex. As the thickness decrease, interfacial delamination due to material mismatch can be further maximized, so the reliability of interface is a critical issue in industry field. Especially, the polymers, which are widely used in semiconductor packaging, are significantly affected by the temperature and moisture. Therefore, in this study, the delamination prediction at the interface of package structure was performed through finite element analysis considering the moisture absorption and desorption under the various temperature conditions. The material properties such as diffusivity and saturated moisture content were obtained from moisture absorption test. The hygro-swelling coefficients of each material were analyzed through TMA and TGA after the moisture absorption. The micro-shear test was conducted to evaluate the adhesion strength of each interface at various temperatures considering the moisture effect. The finite element analysis of interfacial delamination was performed that considers both deformation due to temperature and moisture absorption. Consequently, the interfacial delamination was successfully predicted in consideration of the in-situ moisture desorption and temperature behavior during the reflow process.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.64-72
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• 2023

In this study, after transferring graphene on a Cu substrate and printing a Sn-3.0Ag-0.5Cu Pb-free solder paste on the Cu substrate, effects of the transferred graphene on formations and growths of intermetallic compound (IMC) at the interface between the Cu substrate and the solder were reported during processes of reflow soldering and isothermal aging for 1000 h with various temperatures (125, 150, and 175 ℃). Thicknesses of Cu₆Sn₅ and Cu₃Sn IMCs at the interfaces with graphene were decreased during the reflow soldering and isothermal aging processes compared to those without graphene. The transferred graphene layers also showed that the growth rate constant and square of growth rate constant which related to the growth mechanisms of Cu₆Sn₅ and Cu₃Sn IMCs with t he t emperature a nd t ime of t he i sothermal aging c ould dramatically decreased.