• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.731-733
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• 2012

Because the Double gate MOSFET has two gates, it has more efficient on controling current than the exisiting MOSFET, and it can also decrease short channel effects in the nano-device. In this study, during the manufacturing the Double gate MOSFET, we will analyze the change of threshold voltage according to doping concentration that makes a significant impact on short channel effects. One of the structural factors that affect the threshold voltage on the Double gate MOSFET is the doping concentration, and it is very important device parameter. In this paper, we can find that the threshold voltage became larger when the doping concentration increased from $10^{15}cm^{-3}$ to $10^{19}cm^{-3}$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.10
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• pp.2305-2309
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• 2010

In this paper, the variations of threshold voltage characteristics for ratio of channel length and thickness have been alanyzed for DG(Double Gate)MOSFET having top gate and bottom gate. Since the DGMOSFET has two gates, it has advantages that contollability of gate for current is nearly twice and SCE(Short Channel Effects) shrinks in nano devices. The channel length and thickness in MOSFET determines device size and extensively influences on SCEs. The threshold voltage roll-off, one of the SCEs, is large with decreasing channel length. The threshold voltage roll-off and drain induced barrier lowing have been analyzed with various ratio of channel length and thickness for DGMOSFET in this study.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.765-767
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• 2010

In this paper, the variations of threshold voltage characteristics for ratio of channel length and thickness have been alanyzed for DG(Double Gate)MOSFET having top gate and bottom gate. Since the DGMOSFET has two gates, it has advantages that contollability of gate for current is nearly twice and SCE(Short Channel Effects) shrinks in nano devices. The channel length and thickness in MOSFET determines device size and extensively influences on SCEs. The threshold voltage roll-off, one of the SCEs, is large with decreasing channel length. The threshold voltage roll-off has been analyzed with various ratio of channel length and thickness for DGMOSFET in this study.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.8
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• pp.1749-1753
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• 2005

In this paper, we have investigated electrical characteristics by action temperature of double gate structure that have main gate and side gate. Could know current-voltage characteristic is superior in ultra low temperature (77 K) as well as in room temperature (300 K). Also, conditions of most suitable for get superior DG MOSFET's dynamic characteristics are main gate length of 50nm and side gate length of 70nm and could know that should be approved more than voltage 2V. Also, this DG MOSFET usefully use may as digital device because on-off characteristic is superior.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.4
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• pp.804-810
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• 2005

An analytical subthreshold swing (SS) model has been presented for double gate MOSFET(DGMOSFET) in this study. The results calculated by this model are more precise for about 10nm channel length and thickness than those derived from the previous models. The results of this model are compared with Medici simulation to varify the validity of this model, and good agreementes have been obtained. The changes of SS have been investigated for various channel lengths, channel thicknesses and gate oxide thicknesses using this model, given that these parameters are very important in design of DGMOSFET. This demonstrates that the proposed model provides useful data for design of nano-scale DGMOSFET. It is Known that the SS is improved to smaller ratios of channel thickness vs channel length and is smaller in very thin oxides. New gate dielectric materials with high permittivity have to be developed to enable design of nano-scale DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.737-739
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• 2010

In this paper, the subthreshold characteristics have been alanyzed using MicroTec4.0 for double gate MOSFET(DGMOSFET). The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. The oxide thickness and channel thickness in DG MOSFET determines threshold voltage and extensively influences on Ss(Subthreshold swing). We have investigated the threshold voltage and Ss(Subthreshold swing) characteristics according to variation of channel thickness from 1nm to 3nm in this study.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.263-268
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• 2003

In this paper, we have investigated double gate (DG) MOSFET structure, which has main gate (NG) and two side gates (SG). We know that optimum side gate voltage for each side gate length is about 3V in the main gate 50nm. Also, we know that optimum side gate length for each for main gate length is about 70nm. DG MOSFET shows a small threshold voltage roll-off. From the I-V characteristics, we obtained IDsat=550$mutextrm{A}$/${\mu}{\textrm}{m}$ at VMG=VDS=1.5V and VSG=3.0V for DG MOSFET with the main gate length of 50nm and the side gate length of 70nm. The subthreshold slope is 86.2㎷/decade, transconductance is 114$mutextrm{A}$/${\mu}{\textrm}{m}$ and DIBL (Drain Induced Barrier Lowering) is 43.37㎷. Then, we have investigated the advantage of this structure for the application to multi-input NAND gate logic. Then, we have obtained very high cut-off frequency of 41.4GHz in the DG MOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.881-883
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• 2005

In case is below length 100nm of gate, various kinds problem can be happened with by threshold voltage change of device, occurrence of leakage current by tunneling because thickness of oxide by 1.5nm low scaling is done and doping concentration is increased. SiO$_2$ dielectric substance can not be used for gate insulator because is expected that tunneling current become 1A/cm$^2$ in 1.5nm thickness low. In this paper, devised double gate MOSFET(DGMOSFET) to decrease effect of leakage current by this tunneling. Therefore, could decrease effect of these leakage current in thickness 1nm low of SiO$_2$ dielectric substance. But, very big gate insulator of permittivity should be developed for develop device of nano scale.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.715-717
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• 2010

In this paper, the subthreshold characteristics have been alanyzed using MicroTec4.0 for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing since it can reduce the short channel effects due to structural characteristics. We have presented the short channel effects such as subthreshold swing and threshold voltage for DGMOSFET, using MicroTec, semiconductor simulator. We have analyzed for channel length, thickness and width to consider the structural characteristics for DGMOSFET. The subthreshold swing and threshold voltage have been analyzed for DGMOSFET using MicroTec since MicroTec is well verified as comparing with results of the numerical three dimensional models.