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A Study on the Subthreshold Swing for Double Gate MOSFET  

Jung, Hak-Kee (군산대학교 전자정보공학부)
Dimitrijev, Sima (호주 그리피스대학 전자공학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.9, no.4, 2005 , pp. 804-810 More about this Journal
Abstract
An analytical subthreshold swing (SS) model has been presented for double gate MOSFET(DGMOSFET) in this study. The results calculated by this model are more precise for about 10nm channel length and thickness than those derived from the previous models. The results of this model are compared with Medici simulation to varify the validity of this model, and good agreementes have been obtained. The changes of SS have been investigated for various channel lengths, channel thicknesses and gate oxide thicknesses using this model, given that these parameters are very important in design of DGMOSFET. This demonstrates that the proposed model provides useful data for design of nano-scale DGMOSFET. It is Known that the SS is improved to smaller ratios of channel thickness vs channel length and is smaller in very thin oxides. New gate dielectric materials with high permittivity have to be developed to enable design of nano-scale DGMOSFET.
Keywords
double gate MOSFET subthreshold swing nano scale;
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