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http://dx.doi.org/10.6109/jkiice.2010.14.10.2305

Analysis of Threshold Voltage Roll-off for Ratio of Channel Length and Thickness in DGMOSFET  

Jung, Hak-Kee (군산대학교 전자공학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.14, no.10, 2010 , pp. 2305-2309 More about this Journal
Abstract
In this paper, the variations of threshold voltage characteristics for ratio of channel length and thickness have been alanyzed for DG(Double Gate)MOSFET having top gate and bottom gate. Since the DGMOSFET has two gates, it has advantages that contollability of gate for current is nearly twice and SCE(Short Channel Effects) shrinks in nano devices. The channel length and thickness in MOSFET determines device size and extensively influences on SCEs. The threshold voltage roll-off, one of the SCEs, is large with decreasing channel length. The threshold voltage roll-off and drain induced barrier lowing have been analyzed with various ratio of channel length and thickness for DGMOSFET in this study.
Keywords
DGMOSFET; Channel Length; Channel Thickness; Short Channel Effect; Threshold voltage; Nanodevice; DIBL;
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