• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.74-75
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• 2001

현재의 통신망에서는 clock recovery, regeneration 등을 전기적으로 처리하고 있으나 처리속도의 한계가 있고, 미래의 초고속 네트웍은 이러한 전기적 신호처리의 속도한계를 극복하는 기술이 필요하다. 그러므로, 고속의 광교환과 광신호처리 등 광신호를 전기적으로 바꾸거나 제어하지 않고 전광으로 처리하는 기술에 대한 연구가 진행되고 있으며 이러한 전광신호 처리에 고속의 전광 논리소자가 요구된다. 초기의 전광 논리소자 연구에서는 AND, OR, NOR, XOR 등의 기본 논리 기능이 주로 구현되었으며 이를 활용하여 Shift Register, Binary counter, 전광 반가산기, 직/병렬 데이터 변환기와 같은 복합기능 논리소자의 구현 연구가 이루어지고 있다. (중략)

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.880-883
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• 2012

In this paper, CMOS logic device, the INVERTER, NAND, NOR were designed and fabricated using 0.18um CMOS process for analyzing the effect of transient radiation damage. Fabricated logic devices were measured by applying a 1kHz input at 1.8V supply. As a result, the current consumption of less than 70uA and Rising time, Falling time was within a 4us. Experimental results transmission delays occurred when using a 50M cable for pulse radiation experiments.

• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.50-55
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• 2007

Using the Selective Area Growth (SAG) technology of Metal Organic Chemical Vapor Deposition (MOCVD), we successfully integrated an active device and passive devices on the same substrate. In other words, we integrated a Semiconductor Optical Amplifier (SOA) as an active device and an S-bend waveguide and a Multi Mode Interference (MMI) waveguide as passive devices. The SOA is successfully integrated with passive devices on the same substrate. The Cross-Gain Modulation (XGM) characteristic of the integrated SOA and the loss of an MMI and an S-bend waveguide were measured. Measured XGM characteristics of the SOA showed an extinction ratio of 8.82 dB. The total loss of the MMI and S-bend waveguide was 18 dB.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.1
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• pp.1-7
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• 2007

An MTJ element not only computes Boolean function but also stores the output result in itself. We can make the most use of magneto-logic's merits by employing the magneto-logic in substitution for the sequential logic as well as the combinational logic. This unique feature opens a new horizon for potential application of MTJ as a universal logic element. Magneto-logic circuits using MTJ elements are more integrative and non-volatile. This paper presents novel 3-bit magneto-logic up/down counters and presents simulation results based on the HSPICE macro-model of MTJ that we have developed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.1-7
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• 2008

Magnetic Tunneling Junction (MTJ) has been used as a nonvolatile universal storage element mainly in memory technology. However, according to several recent studies, magneto-logic using MTJ elements show much potential in substitution for the transistor-based logic device. Magneto-logic based on MTJ can maintain the data during the power-off mode, since an MTJ element can store the result data in itself. Moreover, just by changing input signals, the full logic functions can be realized. Because of its programmability, it can embody the reconfigurable magneto-logic circuit in the rigid physical architecture. In this paper, we propose a novel 3-bit arbitrary magneto-logic circuit beyond the simple combinational logic or the short sequential one. We design the 3-bit magneto-logic which has the most complexity using MTJ elements and verify its functionality. The simulation results are presented with the HSPICE macro-model of MTJ that we have developed in our previous work. This novel magneto-logic based on MTJ can realize the most complex logic function. What is more, 3-bit arbitrary logic operations can be implemented by changing gate signals of the current drivel circuit.

• Information Display
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• v.17 no.3
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• pp.26-31
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• 2016

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.151-154
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• 2002

All-optical OR logic gate is realized by use of gain saturation and wavelength conversion in the semiconductor optical amplifiers (SOA). It is operated by the nonlinearity of the SOA gain and hence to obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier (EDFA) at the input of the SOA. The operation characteristics of all-optical OR logic gate are successfully measured at 2.5 Gbit/s.

• 전기의세계
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• v.24 no.4
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• pp.31-39
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• 1975

복잡한 시스템의 설계 또는 연구에서 무엇보다도 중요한 것은 조합설계의 원리를 완전해 이해하는데 있으며 여기서 기술한 조합개폐회로이론은 그 기초가 된다. 조합논리회로란, 출력이 입력의 현재상태에만 전적으로 종속되는 회로를 의미한다. 조합설계의 주목적은 최소수의 소자로 우리가 원하는 개폐특성을 실현하는 회로를 설계할 수 있는 능력을 부여하는데 있다. 이 장에서는 논리함수, 논리식의 표현형식, 논리식의 간단화 및 이들 기법이 실지 조합개폐회로의 설계에 어떻게 적용되는가를 실례를 통하여 기술한다.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.167-168
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• 2009

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.530-534
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• 2003

A novel all-optical NOR gate is proposed and demonstrated for the first time by use of gain saturation in a semiconductor optical amplifier (SOA). It is operated by the nonlinearity of the SOA gain. Hence, to obtain sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier at the input of the SOA. The operation characteristics of the all-optical NOR gate are successfully measured at 10 Gbit/s.