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http://dx.doi.org/10.3807/HKH.2007.18.1.050

Fabrication and Measurement of All-Optical Logic Device by Using Selective Area Growth Technology  

Son, Chang-Wan (Pusan National University)
Yoon, Tae-Hoon (Pusan National University)
Lee, Seok (Photonics Research Center, Korea Institute of Science an Technology)
Nakano, Yoshiaki (University of Tokyo, Department of Electronic Engineering Information Devices Lab., RCAST Univ.)
Publication Information
Korean Journal of Optics and Photonics / v.18, no.1, 2007 , pp. 50-55 More about this Journal
Abstract
Using the Selective Area Growth (SAG) technology of Metal Organic Chemical Vapor Deposition (MOCVD), we successfully integrated an active device and passive devices on the same substrate. In other words, we integrated a Semiconductor Optical Amplifier (SOA) as an active device and an S-bend waveguide and a Multi Mode Interference (MMI) waveguide as passive devices. The SOA is successfully integrated with passive devices on the same substrate. The Cross-Gain Modulation (XGM) characteristic of the integrated SOA and the loss of an MMI and an S-bend waveguide were measured. Measured XGM characteristics of the SOA showed an extinction ratio of 8.82 dB. The total loss of the MMI and S-bend waveguide was 18 dB.
Keywords
Integrated optics devices; Semiconductor optical amplifier; Optical logic;
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Times Cited By KSCI : 2  (Citation Analysis)
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