Korean Journal of Optics and Photonics (한국광학회지)

Optical Society of Korea (한국광학회)
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Fabrication and Measurement of All-Optical Logic Device by Using Selective Area Growth Technology

선택영역성장 기술을 이용한 전광 논리소자용 광소자의 제작 및 측정

  • Son, Chang-Wan (Pusan National University) ;
  • Yoon, Tae-Hoon (Pusan National University) ;
  • Lee, Seok (Photonics Research Center, Korea Institute of Science an Technology) ;
  • Nakano, Yoshiaki (University of Tokyo, Department of Electronic Engineering Information Devices Lab., RCAST Univ.)
  • 손창완 (부산대학교 전자공학과 광전자연구실) ;
  • 윤태훈 (부산대학교 전자공학과 광전자연구실) ;
  • 이석 (한국과학기술연구원 광기술연구센터) ;
  • Published : 2007.02.25
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Abstract

Using the Selective Area Growth (SAG) technology of Metal Organic Chemical Vapor Deposition (MOCVD), we successfully integrated an active device and passive devices on the same substrate. In other words, we integrated a Semiconductor Optical Amplifier (SOA) as an active device and an S-bend waveguide and a Multi Mode Interference (MMI) waveguide as passive devices. The SOA is successfully integrated with passive devices on the same substrate. The Cross-Gain Modulation (XGM) characteristic of the integrated SOA and the loss of an MMI and an S-bend waveguide were measured. Measured XGM characteristics of the SOA showed an extinction ratio of 8.82 dB. The total loss of the MMI and S-bend waveguide was 18 dB.

본 연구에서는 광통신 시스템에 있어서 필수적인 기능으로 전망되고 있는 전광 논리소자를 구현하기 위한 집적된 광소자를 제작, 측정 하였다. 유기금속화학증착법(MOCVD)을 이용한 선택영역 성장기술을 이용하여 서로 다른 두 활성영역을 한 기판위에 성장함으로써 능동 반도체 광소자인 반도체 광증폭기와 수동 반도체 광소자인 다중모드 간섭 도파로, S-자 도파로를 집적하였다. 집적된 수동 소자부분의 손실을 측정하고 전광 논리소자를 구현하는 방법 중 하나인 반도체 광증폭기의 cross-gain modulation(XGM)특성을 측정하여 집적된 전광 논리소자로의 사용 가능성을 알아보았다.

Keywords

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