• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.34-42
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• 2021

Recent cleaning technologies of mask in extremely ultraviolet semiconductor processes were reviewed, focused on newly developed issues such as particle size determination or hydrocarbon and tin contaminations. In detail, critical particle size was defined and proposed for mask cleaning where nanosized particles and its various shapes would result in surface atomic ratio increase vigorously. A new cleaning model also was proposed with amphoteric behavior of electrolytically ionized water which had already shown excellent particle removing efficiency. Having its non-equilibrium and amphoteric properties, electrolyzed ion water seemed to oxidize contaminant surface selectively in nano-scale and then to lift up oxidized ones from mask surface very effectively. This assumption should be further investigated in future in junction with hydrogen bonding and cluster of water molecules.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.581-586
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• 2006

We have generated the argon plasma in the diode chamber based on the established coaxial electrode type and investigated the emitted visible light for emission spectroscopy. We applied various voltages $2\sim3.5kV$ to the device by 0.5kV, and obtained the emission spectrum data for the focused plasma in the diode chamber on the argon pressure of 330 mTorr. The Ar I and Ar II emission line are observed. The electron temperature and ion density have been measured by the Boltzmann plot and Saha equation from assumption of local thermodynamic equilibrium (LTE) The Ar I and Ar II ion densities have been calculated to be $\sim10^{15}/cc\;and\;~10^{13}/cc$, respectively, from Saha equation.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.19-24
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• 2001

The effect of thickness variation and inter-diffusion layer on the reflectivity of Mo/Si multilayer has been investigated. The reflectivity of the imperfect Mo/Si multilayer with thickness variation of 28% was found to be lowered by 10.8% compared to that of ideal Mo/Si multilayers with 40-periods. When the inter-diffusion layer is taken into account, the reflectivity is decreased by 4.7% additionally. We also fecund that the reflectivity continued to increase until the 25th-layer but it showed irregular tendencies about increment and decrement from the 26th-layer of Mo/Si multilayer structures.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.32-37
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• 2016

Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.7-11
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• 2015

In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) $SiN_x$ membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for $SiN_x$ EUV pellicle fabrication.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.125.2-125.2
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• 2012

최근 아태지역 국제민간항공기구는 GPS의 항공이행을 위한 전리층 연구 태스크포스(Ionospheric Study Task Force, ISTF)를 결성하였다. 안전한 GPS 항공이행을 위해서는 지역적 그리고 전지구적 전리층 특성을 파악한 후 이를 기반으로 실시간 전리층 모델이 필요하다. 한국천문연구원은 ISTF의 전리층 변화 특성 분석에 관한 기술분과를 담당하고 있으며 GPS 항공이행 실시간 전리층 모델개발을 위한 아태지역 전리층 분석방법 및 표준규범을 수립하고 있다. 아태지역 전리층 연구에 앞서 우리나라 전리층 특성을 파악하고자 한국천문연구원이 1998년부터 운영 중에 있는 대전 국제 GPS 기준점으로부터 관측된 자료를 이용하여 태양 11년 주기에 해당하는 GPS TEC를 분석하였다. 또한, 해당 기간 동안 우리나라 양/음 전리층 폭풍 발생 빈도에 관한 통계분석을 실시하였다. 본 발표에서는 GPS TEC의 태양 극자외선 플럭스와 10.7 cm 태양전파와의 상관관계 차이점, 연변화 및 계절적 변화 그리고 이에 대한 시간 변화에 대해 보고한다. 또한 GPS TEC의 27일 주기 변화에 특성에 대해 토의하며, 우리나라 상공 전리층 폭풍의 계절적 분포에 대해 논의할 것이다. 끝으로 최근 한국천문연구원 GPS TEC 상시 관측자료에 나타난 태양 및 지자기 폭풍에 따른 전리층 폭풍 사례에 대해 고찰하고 이를 바탕으로 고층대기 연구가 GPS로 대표되는 현업에 적용되는 최근 현황을 소개할 것이다.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.556-562
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• 2006

The plasma display panel is made of many small discharge cells, which consist of a discharge space between the cathode and anode. An electrical discharge occurs in the discharge space filled by neon and xenon gases. The electron temperature is determined from the sparking criterion, which theoretically estimates the electrical breakdown voltage in terms of the xenon mole fraction. The plasma in the cell emits vacuum ultraviolet lights of 147 nm and 173 nm, exciting fluorescent material and converting VUV lights to visible lights. The physical mechanisms of all these processes have been theoretically modeled and experimentally measured. The theory and experimental data agree reasonably well. However, new materials and better configuration of cells are needed to enhance discharge and light emission efficiency and to improve the PDP performance.

• Journal of Astronomy and Space Sciences
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• v.24 no.1
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• pp.55-68
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• 2007

We carried out a validation study on AURIC FUV/EUV dayglow calculation with $OII\;834{\AA},\;OI\;989{\AA},\;OI\;1027{\AA},\;NII\;1085{\AA},\;NI\;1134{\AA},\;NI\;1200{\AA},\;OI\;1304{\AA},\;OI\;1356{\AA}$ dayglows observed by STP78-1 satellite. Comparison between calculated and observed values indicates that they are in agreement within about 20% for dayglows of $OII\;834{\AA},\;OI\;1027{\AA},\;NI\;1200{\AA},\;OI\;1304{\AA}$. However, the calculated intensities of $OI\;989{\AA},\;NII\;1085{\AA},\;NI\;1134{\AA}$ are only 42, 74 and 45% of the observed values, respectively, showing serious differences from the observation. It was surmised that the differences in $OI\;989{\AA}\;and\;NI\;1134{\AA}$ are due to incomplete calculation of radiative transfer and uncertain photochemical processes in AURIC model, respectively. The difference in $NII\;1085{\AA}$ is conjectured to be due to variation of the input solar EUV flux rather than due to AURIC model itself. For up-looking dayglows from the satellite, the calculated values from AURIC are all less than those of STP78-1, which may imply that AURIC model does not include dayglow contribution from regions below the satellite altitude when it computes dayglows in up-looking direction. The differences are particularly serious for $OI\;989{\AA},\;NI\;1134{\AA},\;NI\;1200{\AA}$ dayglows. The calculated latitudinal variation of $OII\;834{\AA}$ dayglow is also significantly different from the observed one, especially at mid-latitude regions. This may be due to inability of MSISE-90 (in input of AURIC) to simulate oxygen atom densities at mid-latitudes during auroral storms at those days of STP78-1 observations. Our findings of the validation study should be resolved when AURIC model is revised in future.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.3
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• pp.197-203
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• 2004

New lithography techniques are employed for the patterning of arbitrary shapes in nanometer scale. When, in the photolithography, the electromagnetic waves such as UV and X-ray are incident on the mask patterned in nanometer scale, the diffraction effect is unavoidable and degrades images of the mask imprinted on wafer. Only a convex lens is well-known Fourier transformer. It is possible to make the mask Fourier-transformed with the convex lens, even though the size of pattern on the mask is very large compared to the wavelength of electromagnetic wave. If the mask, modified according to new technique described in this paper, was placed at the front of the lens and was illuminated with laser beam, the nanometer-size patterns are only formed on the plane called Fourier transform plane. The new method presented here is quite simple setup and comparable with present and next generation lithographies such as UV/EUV photolithograpy and electron projection lithography when compared in attainable minimum linewidth. In this paper, we showed our theoretical research work in the field of Fourier optics, . In the near future, we are going to verify this theoretical work by experiments.