• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.89-93
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• 2007

This paper presents the design and the implementation of input/output (I/O) interface circuits for 2.5 Gbps operation in a 3.3V 0.35um CMOS technology. Due to the differential transmission technique and low voltage swing, LVDS(low-voltage differential signaling) has been widely used for high speed transmission with low power consumption. This interface circuit is fully compatible with the LVDS standard. The LVDS proposed in this paper utilizes a telescopic amplifier. This circuit is operated up to 2.3 Gbps. The circuit has a power consumption of 25. 5mW. This circuit is designed with Samsung $0.35{\mu}m$ CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

• Journal of IKEEE
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• v.10 no.2 s.19
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• pp.128-133
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• 2006

This paper describes a high speed interface circuit using redundant multi-valued logic for high speed communication ICs. This circuit is composed of encoding circuit that serial binary data are received and converted into parallel redundant multi-valued data, and decoding circuit that converts redundant multi-valued data to parallel binary data. Because of the multi-valued data conversion, this circuit makes it possible to achieve higher operating speeds than that of a conventional binary logic. Using this logic, the proposed 1:4 DEMUX (demultiplexer, serial-parallel converter), was designed using a 0.35um standard CMOS technology. Proposed DEMUX is achieved an operating speed of 4.5Gb/s with a supply voltage of 3.3V and with power consumption of 53mW. The operating speed of this circuit is limited by the maximum frequency which the 0.35um process has. Therefore, this circuit is to achieve CMOS communication ICs with an operating speed greater than 10Gb/s in submicron process of high operating frequency.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.3
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• pp.135-144
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• 2003

This work proposes on-chip full CMOS current and voltage references for high-speed mixed-mode circuits. The proposed current reference circuit uses a digital-domain calibration method instead of a conventional analog calibration to obtain accurate current values. The proposed voltage reference employs internal reference voltage drivers to minimize the high-frequency noise from the output stages of high-speed mixed-mode circuits. The reference voltage drivers adopt low power op amps and small- sized on-chip capacitors for low power consumption and small chip area. The proposed references are designed, laid out, and fabricated in a 0.18 um n-well CMOS process and the active chip area is 250 um x 200 um. The measured results show the reference circuits have the power supply variation of 2.59 %/V and the temperature coefficient of 48 ppm/$^{\circ}C$ E.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.5C
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• pp.378-385
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• 2008

This paper has been designed with CMOS Analog-to-Digital Converter(ADC) to use a high speed embedded system. It used flash ADC with a voltage estimator and comparator for background developed autozeroing. The speed of this architecture is almost similar to conventional flash ADC but the die size are lower due to reduced numbers of comparators and associated circuity. This ADC is implemented in a $0.25{\mu}m$ pure digital CMOS technology.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.28-36
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• 1998

We have proposed a new non-inverting SOI buffer circuit for the high speed operation at low supply voltage. The body biases of main MOS devices in the proposed circuit are controlled dynamically via subsidiary MOS device connected efficiently to the body terminal. We showed current derivability of the body controlled devices obtained by device simulation and compared with that of conventional SOI devices. Delay time characteristics of the buffer circuit were analyzed by SPICE simulation and compared with those of conventional SOI CMOS buffer circuits. Delay time reduction of the SOI buffer over conventional SOI CMOS buffer with same area is about 36 % at $V_{S}$=1.2 V and $C_{L}$=2 pF. pF.

• Proceedings of the Korea Information Processing Society Conference
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• 2009.11a
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• pp.401-402
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• 2009

4-2 compressor는 곱셈기의 부분 곱 합 트리(partial product summation tree)의 기본적인 구성요소이다. 본 논문은 고속 연산이 가능한 4-2 compressor 구조를 제안한다. 제안한 회로는 최적화된 XORXNOR와 MUX로 구성하였다. 이 회로는 기존의 회로와 비교하였을 때 회로 구성에 필요한 트랜지스터수가 12개 감소하였으며, 지연시간이 32.2% 감소하였다. 제안한 회로는 Samsung 0.18um CMOS 공정을 이용하여 HSPICE로 시뮬레이션 하였다.

• Journal of the Korean Society of Industry Convergence
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• v.4 no.2
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• pp.199-205
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• 2001

With the growth of BiCMOS technology in ASIC design, the issue of analyzing fault characteristics and testing techniques for BiCMOS circuits become more important In this paper, we analyze the fault models and characteristics of high speed full-swing BiCMOS circuits and the DFT technique to enhance the testability of full-swing high speed BiCMOS circuits is discussed. The SPICE simulation is used to analyze faults characteristics and to confirm the validity of DFT technique.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.10C
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• pp.987-992
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• 2002

In this paper, a new clock and data recovery circuit is proposed for the application of data communication systems requiring ㎓-range clock signals. The circuit is suitable for recovering NRZ data which is widely used for high speed data transmission in ㎓ ranges. The high frequency jitter is one of major performance-limiting factors in PLL, particularly when NRZ data patterns are used. A novel phase detector is able to suppress this noise, and stable clock generation is achieved. Futhermore, the phase detector has an adaptive delay cell removing the dead zone problem and has the optimal characteristics for fast locking. The proposed circuit has a convenience structure that can be easily extended to multi-channels. The circuit is designed based on CMOS 0.25㎛ fabrication process and verified by measurement result.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.11
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• pp.55-63
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• 1999

A new CMOS If Package design methodology is presented, analyzing the electrical characteristics of a package and its effects on the CMOS digital circuits. An analytical investigation of the package noise effects due to the simultaneous switching of the gates within a chip, i.e., simultaneous switching noise (SSN) is performed. Then not only are novel design formula to meet electrical constraints of the Package derived, but also package design methodology based on the formula is proposed. Further, in order to demonstrate the Proposed design methodology, the design results are compared with HSPICE (a general purpose circuit simulator) simulation for $0.3\mu\textrm{m}$-based CMOS circuits. According to the proposed design procedures, it is shown that the results have excellent agreements with those of HSPICE simulation.

• Journal of IKEEE
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• v.12 no.1
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• pp.1-7
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• 2008

With the recent development of portable system such as mobile communication and multimedia. Full adders are important components in applications such as digital signal processors and microprocessors. Thus It is important to improve the power dissipation and operating speed for designing a full adder. We propose a new adder with modified version of conventional Ratioed logic and Pass Transistor logic. The proposed adder has the advantages over the conventional CMOS, TGA, 14T logic. The delay time is improved by 13% comparing to the average value and PDP(Power Delay Product) is improved by 9% comparing to the average value. Layouts have been carried out using a 0.18um CMOS design rule for evaluation purposes. The physical design has been evaluated using HSPICE.