• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.11 s.102
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• pp.1106-1113
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• 2005

This paper presents a dual-band mixer for multi-standards of IEEE 802.1la/b/g using a single local oscillator, so as to improve the defects of legacy systems. Those systems have duplicate local oscillators and mixers to handle dual band signals, increasing complexity of system and power loss. The proposed circuit shows 11.6 dB, 16.8 dB of conversion loss and 8.77 dBm, 12.5 dBm of IIP3(Input 3rd Intercept Point) for respective bands when the two RF inputs of 2.452 and 5.260 GHz are down-converted to the identical 356 MHz If frequency. The RF-LO isolations are measured 36 dB, 41 dB at each frequencies and over 50 dB of LO-IF isolations are achieved at all cases.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.9
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• pp.834-843
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• 2016

In this paper, the design of a PIN diode S-band transfer-type SP4T including its driver circuit is presented. Each path of the SP4T is composed of the cascade connection of series-shunt PIN diodes to improve the isolation performance. The SP4T is implemented using chip type PIN diodes and a 20 mil AIN substrate fabricated using thin film technology. The driver circuit for the SP4T is designed using a multiplexer and four NMOS-PMOS push-pull pair. From on-wafer measurement, the fabriacted SP4T shows a maximum insertion loss of 1.1 dB and a minimum isolation of 41 dB. The time performance of the driver circuit is evaluated using the packaged PIN diodes with the identical PIN diode chip, and the transition time for on-off and off-on are below 100 nsec. For an input power level of 150 W, the measured insertion loss and isolation are close to those of the on-wafer measurement taking into consideration of the coaxial package mismatch and insertion loss.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.1
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• pp.99-104
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• 2013

As a demand for the portable device requiring smaller size and better performance is in hike, reducing the size of conventionally used planar 2 dimensional integration circuit(IC) cannot be a solution for the enhancement of the semiconductor integration circuit technology due to an increase in RC delay among interconnects. To address this problem, a new technology of 3 dimensional integration circuit (3D-IC) has been developing. In this study, three-dimensional integrated device was investigated due to improve of reducing the size, interconnection problem, high system performance and functionality.

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.85-87
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• 2010

본 논문에서는 공통 결함접지구조를 이용하여 브랜치 라인 하이브리드 커플러 회로를 소형화하여 설계한 결과를 제시한다. 브랜치 라인 하이브리드 커플러 회로는 가장 널리 쓰이는 전자파회로중 하나이다. 본 논문에서 제안하는 공통 결함접지구조를 이용하여 소형화한 커플러 회로는 크기가 소형화되었음에도 불구하고, 기존 커플러 구조와 유사한 정합, 격리 및 전력분배 특성을 보여준다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1076-1081
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• 2007

In this paper, we propose a new switch structure for time division duplex(TDD) system. The existing TDD structure utilizes a circulator fur isolation characteristic between ports. However, the circulator produces intermodulation distortion signals which are undesired signal because of its nonlinear properties. The proposed circuit is composed of a modified branch-line hybrid coupler which controls the signal flow while the isolated port is open-/short- terminated. In order to prove the validity of the presented structure, the switch circuit is fabricated and measured at 2.3GHz, the center frequency of Wibro service system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.2
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• pp.1-8
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• 2004

This paper describes the design of monolithic optical transceiver circuitry being used as a part of the fiber optic modules. It has been designed in 0.6 ${\mu}{\textrm}{m}$ 2-poly 3 metal silicon CMOS analog technology and operates at 155.52 Mbps(STM-1) data rates. It drives laser diode to transmit intensity modulated optical signal according to 155.52 Mbps electrical data from system. Also, it receives 155.52 Mbps optical data that transmitted from other systems and converts it to electrical data using photo diode and amplifier. To avoid noise and interference between transmitter and receiver on one chip, layout techniques such as special placement, power supply separation, guard ring, and protection wall were used in the design. The die area is 4 ${\times}$ 4 $\textrm{mm}^2$ and the estimated power dissipation is less than 900 ㎽ with a single 5 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.11-17
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• 2004

This paper describes the implementation of monolithic optical transceiver circuitry being used as a part of the fiber optic modules. It has been fabricated in 0.6 ${\mu}{\textrm}{m}$ 2-poly 3-metal silicon CMOS analog technology and operates at 155.52 Mbps(STM-1) data rates. It drives laser diode to transmit intensity modulated optical signal according to 155.52 Mbps electrical data from system. Also, it receives 155.52 Mbps optical data that transmitted from other systems and converts it to electrical data using photo diode and amplifier. To avoid noise and interference between transmitter and receiver on one chip, layout techniques such as special placement, power supply separation, guard ring, and protection wall were used in the design. The die area is 4 ${\times}$ 4 $\textrm{mm}^2$, and it has 32.3 ps rms and 335.9 ps peak to peak jitter on loopback testing. the measured power dissipation of whole chip is 1.15 W(230 mW) with a single 5 V supply.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.6
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• pp.128-134
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• 2009

In this paper, we propose a new lumped Wilkinson power divider which is designed to have lower quality-factors in the impedance transformation. Therefore, it can provide wider bandwidth than the conventional one. Moreover, the proposed power divider consists of fewer number of elements so that the circuit size can be further reduced. Simulation results show that the proposed lumped power divider allows a 50% wider bandwidth in the return loss and isolation performance. The conventional and new Wilkinson power was designed and fabricated based on the derived equations at 2.0 GHz. In the measurement, the proposed divider achieved a good performance with an input return loss ($S_{11}$) of -23.0 dB, an isolation ($S_{23}$) of -29.0 dB and an insertion loss ($S_{21}$) of -3.12 dB at the design frequency with wider bandwidth than the conventional one.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.7-12
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• 2008

This paper presents a lateral resistive contact RF MEMS switch using comb drive. Our goal was to fabricate the RF MEMS switch with high reliability and good RF characteristics for front end module in wireless transceiver system. Therefore, comb drive is used for large contact force in order to achieve low insertion loss and small off-state capacitance in order to achieve high isolation. The single crystalline silicon is used for mechanical reliability. As a result, the developed switch showed insertion loss less than 0.44 dB at 2 GHz, isolation greater than 60 dB, and low actuation voltage at 26 V.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.1
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• pp.99-104
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• 2013

In this paper, we developed a fully integrated downconverter MMIC (monolithic microwave integrated circuit) including Lange coupler and output active balun for millimeter wave applications. Concretely, ${\lambda}$/4 transmission line was added to Lange coupler for size reduction of RF/LO input, and mixed RF/LO signals were applied to gate of the FET of mixer. Active balun was used at output port for a coupling of out-of-phase IF output signals. According to measured results, the proposed downconverter MMIC showed good RF performances. For example, the downconverter MMIC showed an LO leakage power of -25 dBc at IF output port, and a RF-LO isolation of 18 dB. Therefore, off-chip components such as LO rejection filters were not required for a normal operation of the proposed downconverter MMIC. The proposed downconverter MMIC showed a conversion gain of 10.3 dB at RF frequency of 63 GHz. The size of the downconverter MMIC including all active and passive components was $2.2{\times}1.4mm^2$.