• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.53-56
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• 2003

A linear power amplifier is particularly emphasized on the CDMA system using a linear modulation scheme, because IMD which cause adjacent channel interference and co channel Interference is mostly generated in a nonlinear power amplifier. In this paper, a new type of linearization technique proposed. It is presented that balanced MESFET predistortion linearizer added. Experimental result are present for Korea PCS frequency band. The implemented linearizer is applied to a 30dBm class. A power amplifier for simulation performance. Two-tone signals at 1850 MHz and 1851.23 MHz are injected into the main power amplifier. The main power amplifier with a 12.1dB gain and a P1dB of 30 dBm(two-tone) was utlized. The reduction of IMD is around 22dB.

• Journal of KIISE:Computing Practices and Letters
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• v.9 no.5
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• pp.567-577
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• 2003

We usually applied PPP CHAP (Point-to-Point Protocol Challenge Handshake Authentication Protocol) when the visited ISP subscriber accesses to authentication server in own home ISP network and IP Assignment for remote Internet service. But PPP CHAP doesn't support in case of visited ISP subscriber in GPRS network accesses to authentication server in own home ISP network for wireless Internet service. We suggest solution this problem with PPP CHAP improvement. For this we propose the modified PPP CHAP message format, PCO Message format at MT, and interworking message and format between GGSN and RADIUS in home ISP network for wireless internet service of mobile ISP subscriber at GPRS network in this paper. We also show authentication results when visited mobile ISP subscriber via PPP CHAP at GPRS network accesses the RADIUS server in home ISP network.

• Journal of Power System Engineering
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• v.18 no.3
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• pp.51-58
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• 2014

Injection molding simulation provided optimized design results by analyzing quality problems while the product is in assembly or in the process of manufacturing with make automobile plastics. Frequent change of design, change of injection molding, repetition of test injection which was held in the old way can now be stopped. And quality upgrade is expected instead. This report deals with the effect which the position of injection molding automobile console gate and number has on product quality including pressure at end of fill, bulk temperature at end of fill, shear stress of end of fill, residual stress at post filling end, product weld lines and warpage results. Simpoe-Mold simulates the complete manufacturing process of plastic injected parts, from filling to warpage. Simpoe-Mold users, whether they are product designers, mold makers or part manufacturers, can identify early into the design stage potential manufacturing problems, study alternative solutions and directly assess the impact of such part modification, whatever the complexity and geometry of such parts, shell part as plain solid parts.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.11
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• pp.1507-1514
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• 2011

Injection molding is the most commonly used process that uses plastic material. Today, the uses of plastic material are continuously increasing, and the range of application is also being extended by the development of novel materials. An inline skate consists of 4 components: the boot, frame, wheel and brake. Among these components, the frame is the most critical. The injection formability for a variety of injection materials for inline skate frames was studied. We also studied the injection formability of the product for various sizes of the runner and gate. In this study, injection molding analysis was performed using MOLDFLOW, and structural analysis was performed using ANSYS.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.229-229
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• 2011

부유 게이트 Floating gate (FG) 플래시 메모리 소자의 단점을 개선하기 위해 전하 포획 층에 전하를 저장하는 전하 포획 플래시 메모리 Charge trap flash (CTF)소자에 대한 연구가 활발히 진행되고 있다. CTF소자는 FG플래시 메모리 소자에 비해 비례축소가 용이하고 긴 retention time을 가지며, 낮은 구동 전압을 사용하는 장점을 가지고 있다. CTF 소자에서 비례축소에 따라 단채널 효과와 펀치-쓰루 현상이 증가하는 문제점이 있다.본 연구에서는 CTF 단채널 효과와 펀치-쓰루 현상을 감소시키기 위한 방법으로 silicon-on-insulator (SOI) 기판을 사용하였으며 SOI기판에서 절연층의 깊이에 따른 전기적 특성을 고찰하였다. silicon-oxide-nitride-oxide-silicon(SONOS) 구조를 가진 CTF 메모리 소자를 사용하여 절연층의 깊이 변화에 따른 subthreshold swing특성, 쓰기-지우기 동작 특성을 TCAD 시뮬레이션 툴인 Sentaurus를 사용하여 조사하였다. 소스와 드레인의 junction depth는 20 nm 사용하였고, 절연층의 깊이는 5 nm~25 nm까지 변화하면서 절연층의 깊이가 20 nm이하인 fully depletion 소자에 비해, 절연층의 깊이가 25 nm인 소자는 partially depletion으로 인해서 드레인 전류 레벨이 낮아지고 subthreshold swing값이 증가하는 현상이 나타났다. 절연층의 깊이가 너무 얕을 경우, 채널 형성의 어려움으로 인해 subthreshold swing과 드레인 전류 레벨의 전기적성질이 SOI기판을 사용하지 않았을 경우보다 떨어지는 경향을 보였다. 절연층의 깊이가 17.5 nm인 경우, CTF소자의 subthreshold swing과 드레인 전류 레벨이 가장 좋은 특성을 보였다.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2002.11a
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• pp.31-35
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• 2002

본 논문에서는 DVB-T 표준안의 모든 동작모드를 지원하며 임펄스 잡음 제거, 안테나 diversity 수신, 향상된 채널추정방법을 적용한 유럽향 디지털 TV 수신용 채널 칩셋의 설계에 관한 내용이다. 설계된 칩은 여러 개의 구성 블럭으로 구성되어있는데 여기에는 여러 가지의 향상된 알고리즘과 설계 아키텍쳐가 사용되었다. 가정용 가전기기들이 발생시키는 일정주기의 임펄스 잡음을 제거하기 위하여 임펄스 잡음 제거 블록을 AGC뒤에 사용하였다. 동기부는 대략적 주파수동기, 미세 주파수동기, 대략적 타이밍동기, 미세 타이밍 동기 등으로 이루어져 있으며 본 설계의 주파수 보상 영역은 $\pm$280Khz, 타이밍 보상 영역은 $\pm$500ppm이다. 파일럿 신호를 이용하여 채널추정과 보상을 수행하며 기존의 선형 보간기법과 함께 4개의 파일럿 신호를 이용한 보간기법을 사용하여 이동수신환경에 대응할 수 있도록 하였다. 이와 함에 수신성능을 개선할 수 있다고 알려진 안테나 diversity 기능을 채용하여 고정 및 이동 수신시의 수신성능을 향상시켰다. 안테나 diversity를 위해서 2개 이상의 수신 칩이 사용되며 이를 위해서 본 설계에서는 MRC(Maximum Ratio Combining)알고리즘을 사용하였다 본 설계는 5층 메탈 0.18um 공정을 사용하였으며 2.7Mbit 의 메모리 소자를 포함하여 대략 300 만 게이트의 회로크기를 갖으며 100 핀 PQFP로 제작되었다. 본 논문에서는 설계된 회로의 각 블록별 기능에 대한 설명과 함께 시뮬레이션 결과와 ASIC설계결과를 기술하였다.

• The Journal of the Korea Contents Association
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• v.6 no.11
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• pp.225-234
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• 2006

In this paper, we design a combined security processor, ECC, MD-5, and AES, as a SIP for cryptography of securing contents. Each SIP is modeled and designed in VHDL and implemented as a reusable macro through logic synthesis, simulation and FPGA verification. To communicate with an ARM9 core, we design a BFM(Bus Functional Model) according to AMBA AHB specification. The combined security SIP for a platform-based SoC is implemented by integrating ECC, AES and MD-5 using the design kit including the ARM9 RISC core, one million-gate FPGA. Finally, it is fabricated into a MPW chip using Magna chip $0.25{\mu}m(4.7mm{\times}4.7mm$) CMOS technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.7
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• pp.464-472
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• 2001

Asymmetric n-MOSFET＇s for improving packing density have been fabricated with 0.35 ${\mu}{\textrm}{m}$ CMOS process. Electrical characteristics of asymmetric n-MOSFET show a lower saturation drain current and a higher linear resistance compared to those of symmetric devices. Substrate current of asymmetric MOSFET is lower than that of symmetric devices. Asymmetric n-MOSFET＇s have been modeled using a parasitic resistance associated with abnormally structured drain or source and a conventional n-MOSFET model. MEDICI simulation has been done for accuracy of this modeling. Simulated values of reverse as we11 as forward saturation drain current show good agreement with measured values for asymmetric device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.5
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• pp.321-334
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• 2003

Globally-Asynchronous Locally-Synchronous (GALS) systems are worthy of notice as an adequate architecture for a large scaled chip design with guaranteeing easy designs and functional confidence. In this paper, we suggest an advanced structure of the interface unit which is indispensable for GALS systems by using stoppable clocks. The proposed interface unit is composed of a sender module and a receiver module. The sender module can carry out data transmission partially without the relation to an internal clock. We have designed it with 0.25${\mu}{\textrm}{m}$ standard cell library at the gate level and simulated its operation to show performance improvement. Finally, we constructed all example circuit with the interface unit and proved the correct operation of it.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.10
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• pp.73-81
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• 2000

This paper presents the design and simulation of a power and area efficient interpolation FIR filter with partitioned look up table (LUT) structure. Using the symmetry of the filters coefficients and the contents of the LUT, the area of the proposed filter is minimized. The two filters share the partitioned LUT and activate the LUT selectively to realize the low power operation. The proposed filter has been designed in a 5.0 Volts 0.6${\mu}m$ CMOS technology. Power consumption results have been obtained from Powermill simulations. Experimental results suggest that the proposed filter reduces both the power consumption by 28% and simultaneously the gate area by 5% simultaneously compared to the previously proposed filters.