• 제목/요약/키워드: $c_a/c_c$

검색결과 122,069건 처리시간 0.106초

Pyrolysis Paths of Polybutadiene Depending on Pyrolysis Temperature

  • Choi Sung-Seen;Han Dong-Hun
    • Macromolecular Research
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    • 제14권3호
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    • pp.354-358
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    • 2006
  • Polybutadiene (BR) was pyrolyzed at $540-860^{\circ}C$ and the effect of pyrolysis temperature on variations in the relative abundance of the major pyrolysis products (C4-, C5-, C6-, C7-, and C8-species) was investigated. Formation of the C4-, C5-, C6-, and C7-species competed with that of the C8-species. Relative intensity of the C8-species decreased with increasing pyrolysis temperature, while that of the C5-, C6-, and C7-species increased. Pyrolysis paths were became more complicated with increasing pyrolysis temperature. We suggested the operation of double bond migration and succeeding rearrangements for the formation of the C5- and C7-species and various rearrangements, including a double bond, for the formation of the C6-species at high temperature. The activation energies for the pyrolysis product ratios of(C5+C6+C7)/C4 and C8/C4 were used to explain the competition reactions to form the pyrolysis products.

고온 단결정 3C-SiC 압저항 압력센서 특성 (Characteristics of high-temperature single-crystalline 3C-SiC piezoresistive pressure sensors)

  • 판 투이 탁;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.274-274
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    • 2008
  • This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

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Phase Equilibria and Reaction Paths in the System Si3N4-SiC-TiCxN1-x-C-N

  • H.J.Seifert
    • 한국분말재료학회지
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    • 제6권1호
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    • pp.18-35
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    • 1999
  • Phase equilibria in the system Si3N4-TiC-TiCxN1-x-C-N were determined by thermodynamic calculations (CALPHAD-method). The reaction peaction paths for Si3N4-TiC and SiC-TiC composites in the Ti-Si-C-n system were simulated at I bar N2-pressure and varying terpreatures. At a temperature of 1923 K two tie-triangles (TiC0.34N0.66+SiC+C and TiC0.13N0.87+SiC+Si3N4) and two 2-phase fieds (TiCxN1-x+SiC; 0.13

양극 산화법으로 형성된 다공질 3C-SiC 막의 특성 (Characteristics of porous 3C-SiC thins formed by anodization)

  • 김강산;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.45-45
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    • 2009
  • This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

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비정규 공정에 대한 공정능력의 새로운 측도: $C_{psk}$ (A New Measure of Process Capability for Non-Normal Process : $C_{psk}$)

  • 김홍준;송서일
    • 품질경영학회지
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    • 제26권1호
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    • pp.48-60
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    • 1998
  • This paper proposes a fourth generation index $C_{psk}$, constructed from $C_{psk}$, by introducing the factor|$\mu$-T| in the numerator as an extra penalty for the departure of the process mean from the preassigned target value T. The motivation behind the introduction of $C_{psk}$ is that when $T\neqM$ process shifts away from target are evaluated without respect to direction. All indices that are now in use assume normally distributed data, and any use of the indices on non-normal data results in inaccurate capability measurements. In this paper, a new process capability index $C_{psk}$ is introduced for non-normal process. The Pearson curve and the Johnson curve are selected for capability index calculation and data modeling the normal-based index $C_{psk}$ is used as the model for non-normal process. A significant result of this research find that the ranking of the six indices, $C_{p}$, $C_{pk}$, $C_{pm}$, ${C^*}_{psk}$, $C_{pmk}$, $C_{psk}$in terms of sensitivity to departure of the process median from the target value from the most sensitive one up to the least sensitive are $C_{psk}$, $C_{pmk}$, ${C^*}_{psk}$,$C_{pm}$, $C_{pk}$, $C_{p}$.

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졸-겔법을 이용한 C3A의 생성에 미치는 C12A7과 OH기의 영향 (The Effect of C12A7 and OH Group on the Formation of C3A by Sol-Gel Method)

  • 김정환;이전;한기성
    • 한국세라믹학회지
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    • 제24권1호
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    • pp.70-76
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    • 1987
  • The effect of C12A7 and OH group on the synthesis of C3A by the sol-gel process using aluminum-sec-butoxide and calcium nitrate was studied. C3A by sol-gel method was compared with C3A obtained by the conventional method with respect to their reactivity of formation and crystal size. The sol-gel process for initial formation of C12A7 and C3A at lower temperature (1100, 1200$^{\circ}C$) was superior, but that for complete crystallization of C3A at higher temperature (1300, 1400$^{\circ}C$) was inferior to oxide mixture process. When heat treated under the atmosphere oxygen-free dried nitrogen eliminate the influence of OH group in C12A7, the reactivity of C3A from sol-gel sample incorporated OH group were poor, whereas that from oxide mixture sample showed remarkable effect. The poor crystallization of C3A at higher temperature is presumed to be due to the fact that incorporated OH group in C12A7 formed at lowr temperature might interrupt the diffusion of CaO to C12A7 to from C3A. The crystal size and the hydration characteristics of both C3A obtained by different processes exhibited almost the same results.

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탄화규소섬유와 탄소섬유 하이브리드 직물을 강화재로 한 SiC 매트릭스 세라믹복합재의 기계적물성, 산화 및 삭마 저항성 개선 연구 (Study on Improvement of Mechanical Property, Oxidation and Erosion Resistance of SiC Matrix Ceramic Composites Reinforced by Hybrid Fabric Composed of SiC and Carbon Fiber)

  • 윤병일;김명주;김재성;권향주;윤성태;김정일
    • Composites Research
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    • 제32권3호
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    • pp.148-157
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    • 2019
  • 본 연구에서는 탄소섬유, 탄화규소섬유 그리고 하이브리드섬유를 강화재로 하여 TGCVI와 PIP 혼합 공정으로 $C_f/SiC$, $SiC_f/SiC$, $C_f-SiC_f/SiC$의 세라믹복합재를 제조하였다. 열충격싸이클시험, 3점 굴곡시험과 Oxy-Acetylene 토취 시험후에 그들의 기계적물성, 산화저항성과 내삭마성을 평가하였다. $C_f/SiC$복합재는 온도 증가에 따라서 기계적물성의 감소와 준 연성의 파단모드, 그리고 높은 삭마량을 보였다. $SiC_f/SiC$복합재는 $C_f/SiC$ 복합재에 비하여 강한 기계적물성, 낮은 삭마량을 그리고 취성의 파단모드를 나타냈다. 한편 하이브리드 복합재는 가장 우수한 기계적물성과 $SiC_f/SiC$보다는 연성의 파단모드 그리고 $C_f/SiC$ 보다 낮은 삭마량의 결과를 나타냈다. Oxy-Acetylene 토취 시험 중에 SiC매트릭스는 산화되어 $SiO_2$층을 형성하였으며, 특히 이 층은 $C_f-SiC_f/SiC$$SiC_f/SiC$ 복합재에서 섬유의 추가적인 삭마를 막는 역할을 하는 것으로 나타났다. 결론적으로 낮은 기공율을 갖는 하이브리드 복합재를 제조한다면, $C_f/SiC$의 산화로 인한 기계적물성의 감소와 $SiC_f/SiC$ 복합재의 취성 파단모드의 개선으로 고온 산화분위기에서 고온열구조재로의 적용이 높을 것으로 기대한다.

銀Ion 및 역상(逆相) HPLC를 이용(利用)한 입체이성체적(立體異性體的) 분석(分析)에 의한 은행종실유(銀杏種實油)의 트리글리세리드의 분자종(分子種)에 관한 연구(硏究) (The Stereospecific Analysis of the Triacylglycerols of Ginkgo Nut Oils by High-Performace Liquid Chromatography(HPLC) in the Silver Ion and Reversed Phase Modes)

  • 조용계;우효경;김훈숙
    • 한국응용과학기술학회지
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    • 제14권1호
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    • pp.61-76
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    • 1997
  • Triacylglycerols of the seeds of Ginkgo biloba have been resolved by high-performace liquid chromatography(HPLC} in the silver-ion and reverse-phase modes. The fatty acids were identified by a combination of capillary gas chromatography and gas-chromatography /mass spectrometry as the methyl and /or picolinyl ester. The main components are $C_{18:2{\omega}6}$(39.0mol%), $C_{18:1{\omega}7}$(asclepic acid 21.5mol%), and $C_{18:1{\omega}9}$(oleic acid, 13.8mol%). Considerable amounts of unusual acid such as $C_{20:3{\Delta}^{5,11,14}$ (5.7mol%), $C_{18:2{\Delta}^{5,9}$(2.8mol%), and $C_{18:3}{\Delta}^{5,9,12}$(1.6mol%), were checked. In addition, an anteiso-branched fatty acid, 14-methylhexadecanoic acid, was also present as a minor component(0.9 mol%). The triacylglycerols were separated into 17 fractions by reverse-phase HPLC, and the fractionation was achieved according to the partition numnber(PN) in which a ${\Delta}^5$-non methylene interrupted double bond($^5$-NMDB) showed different behaviour from a methylene interrupted double bond in a molecule with a given cahinlength. Silver-ion HPLC exhibited excellent resolution in which fractions(23 fractions) were resolved on the basis of the number and configuration of double bonds. In this instance, the strength of interaction of a ${\Delta}^5$-NMDB system with silver ions seemed to be weaker than a methylene interrupted double bond system. The principal triacylglycerol species are as follows ; $(C_{18:2{\omega}6)2}/C_{18:1{\omega}7}$, $C_{18:1{\omega}9}/C_{18:1{\omega}7}/C_{18:2{\omega}6}$, $(C_{18:1{\omega}7)2}/C_{18:2{\omega}6}$, $C_{16:1{\omega}7}/C_{18:1{\omega}9}/C_{20:3}{\Delta}^{5,11,14}$, $C_{16:1{\omega}7}/C_{18:1{\omega}7}/C_{20:3}{\Delta}^{5,11,14}$, $C_{18:1{\omega}9}/C_{18:1{\omega}7}/C_{18:2{\omega}6}$, $C_{18:1{\omega}9}/C_{18:2}{\Delta}^{5,5}/C_{20:3}{\Delta}^{5,11,14}$, $(C_{18:1{\omega}7)2}/C_{18:2{\omega}6}$ and $(C_{18:1{\omega}9)2}/C_{18:2{\omega}6}$, while simple triacylglycerols without $C_{18:2{\omega}6})_3$ were not present. Stereospecific analysis showed that fatty acids with ${\Delta}^5$-NMDB system and saturated chains were predominantly located at the site of sn-3 carbon of glycerol backbones. It is evident that there is asymmetry in the distribution of fatty acids in the TG molecules of Ginkgo nut oils.

In-situ 도핑량이 다공성 3C-SiC 박막의 특성에 미치는 영향 (Effects of In-situ doping Concentration on the Characteristics of Porous 3C-SiC Thin Films)

  • 김강산;정귀상
    • 한국전기전자재료학회논문지
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    • 제23권6호
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    • pp.487-490
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    • 2010
  • This paper describes the elecrtical and optical characteristics of $N_2$ doped porous 3C-SiC films. Polycrystalline 3C-SiC thin films are anodized by $HF+C_2H_5OH$ solution with UV-LED exposure. The growth of in-situ doped 3C-SiC thin films on p-type Si (100) wafers is carried out by using APCVD (atmospheric pressure chemical vapor deposition) with a single-precursor of HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$. 0 ~ 40 sccm $N_2$ was used for doping. After the growth of doped 3C-SiC, porous 3C-SiC is formed by anodization with $7.1\;mA/cm^2$ current density for anodization time of 60 sec. The average pore diameter is about 30 nm, and etched area is increased with $N_2$ doping rate. These results are attributed to the decrease of crystallinity by $N_2$ doping. Mobility is dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC are 2.5 eV and 2.7 eV, respectively.

초보자를 위한 C 언어 학습 기능성 게임 개발 사례 : 프레C맨 (A Preliminary Study on Serious Game for C Language Study of Beginners : freCman)

  • 황기태;정인환
    • 한국게임학회 논문지
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    • 제15권4호
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    • pp.199-206
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    • 2015
  • 본 논문은 C 언어를 배우는 초보자를 위한 기능성 게임 프레C맨(freCman)의 개발 사례를 소개한다. C 언어를 처음 배우는 사람들은 C 언어의 키워드나 문법, 문장 구조에 생소하여 학습에 어려움을 느낀다. 본 논문은 슈팅스타C, 숨은 오류 찾기, 코드 순서 맞추기 등의 3 가지의 게임을 개발하고, 이를 통해 C 언어에 보다 쉽게 접근할 수 있도록 하였고, CTS(Code to Speech) 기능을 추가하여 C 소스 코드를 읽어 줌으로써 청각적으로 C 언어의 키워드나 문장에 친숙하도록 하였다. C 언어를 처음 배우는 학생들을 대상으로 실험한 결과 프레C맨이 C 프로그래밍 학습에 도움이 되었다는 결과를 얻었다.