Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.11a
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- Pages.45-45
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- 2009
Characteristics of porous 3C-SiC thins formed by anodization
양극 산화법으로 형성된 다공질 3C-SiC 막의 특성
- Kim, Kang-San (University of Ulsan) ;
- Chung, Gwiy-Sang (University of Ulsan)
- Published : 2009.11.12
Abstract
This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: