• 제목/요약/키워드: $TiO_2

검색결과 7,854건 처리시간 0.04초

Multi-coating법으로 제조된 두꺼운 PZT막의 두께 변화에 따른 미세구조 및 전기적 특성 (Microstructures and Electrical Properties of Thick PZT Films with Thickness Variation Fabricated by Multi-coating Method)

  • 박준식;장연태;박효덕;최승철;강성군
    • 한국재료학회지
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    • 제12권3호
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    • pp.211-214
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    • 2002
  • Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

3차원 Si칩 실장을 위한 효과적인 Cu 충전 방법 (Effective Cu Filling Method to TSV for 3-dimensional Si Chip Stacking)

  • 홍성철;정도현;정재필;김원중
    • 대한금속재료학회지
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    • 제50권2호
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    • pp.152-158
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    • 2012
  • The effect of current waveform on Cu filling into TSV (through-silicon via) and the bottom-up ratio of Cu were investigated for three dimensional (3D) Si chip stacking. The TSV was prepared on an Si wafer by DRIE (deep reactive ion etching); and its diameter and depth were 30 and $60{\mu}m$, respectively. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. The current waveform was varied like a pulse, PPR (periodic pulse reverse) and 3-step PPR. As experimental results, the bottom-up ratio by the pulsed current decreased with increasing current density, and showed a value of 0.38 on average. The bottom-up ratio by the PPR current showed a value of 1.4 at a current density of $-5.85mA/cm^2$, and a value of 0.91 on average. The bottom-up ratio by the 3-step PPR current increased from 1.73 to 5.88 with time. The Cu filling by the 3-step PPR demonstrated a typical bottom-up filling, and gave a sound filling in a short time.

1990년대에 패션의 복고풍에 관한 고찰 -1960년대 Mode의 재현을 중심으로- (A Study on Retro-look Fashion Appeared in 1990′s -With Special Reference to The Revival of 1960′s Mode-)

  • 류숙희;박종희
    • 복식문화연구
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    • 제4권2호
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    • pp.247-263
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    • 1996
  • This study focuses on a comparative study of 1960s'retro look mode in terms of the past and present in order to find out in detail how it in the past is readjusted after it was appeared in the present. For such a study, in the first place the contents of the dress and its ornament of a retro-look fashion was refined through some literature, and then, some works of the dress and its ornament of a retro-look fashion was refinded through some literature, and then, some works of eh dress and its ornament revived in 1960's mode were analysed, based on some fashion magazines at home and abroad like Bazaar, Fashion etc News in 1990s. After 1960s'retro-look mode which reappeared in 1990s was researched in terms of silhouette, detail, texture, color, and pattern, differences between those tow periods of 1960s and 1990s and their causes are summarized as follows: 1. In the aspect of silhouette, it appears that the silhouette in 1960s is that of somewhat stiff, charming image in which Body is excluded and the silhouette in 1990s is that of an soft, feminie image in which Body is emphasized. It was understood that the cause of such a delicate difference comes from the influences of the change in aesthetic senses or awareness, naturalism and neo-feminism. 2. In the aspect of detail, it appears that the detail in 1990s is of an attempt to express in diverse images, compared to that in 1960s, and new images are created new image in 1990s by means of presenting entirely ill-matched images. The major cause of that is because of Antistandard fashion. 3. In the aspect of textures, it appears that a great feature is that the texture in 1990s is of that introduced, being changed in natural and high-class looks, compared to that of 1960s. It was reviewed that the major cause of this is because of a result from the influence of naturalism and the technical growth in various fields which has brought the development of dress material. 4. In the aspect of color, it appears that the color in 1990s is of an image of primary color which is far more sensual and feminie than that of 1960s. It was studied that the major cause of ti comes from the influence of neo-feminism, etc. 5. In the aspect of pattern, it appears that the pattern in 1990s is of that of symbolism, transposition, and the ecletic feature of various modes which appear more deeply than that of 1960s. It was studied that the major cause of such changes is because of a trend of postmodernism which has brought the change of the spiritual structure different from that in the age of modernism. In conclusion, it was understood that the retro-look fashion is of an expression technic of dress and its ornament in that o dress in the pst is simply imitate, but new reconstitution is done by using the elements in the past. at the same time, ti was clarified that even though the elements in the past are revived as they were, dress and its ornament is governed by the social and cultural environments of he day, and with this proof it can be said that the fashion in each age is of a reflection of social phenomena of that age.

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코팅된 무색 합성 모이사나이트의 특징 (Characterization of coated colorless synthetic moissanite)

  • 최현민;김영출;장한수;석정원
    • 한국결정성장학회지
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    • 제32권1호
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    • pp.7-11
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    • 2022
  • 한미보석감정원은 최근에 5개의 투명한 합성 모이사나이트를 검사했다. 그 샘플들은 라운드 브릴리언트 컷의 무색, 핑크, 황색, 청색, 적색 컬러와 0.93~0.96 ct 중량을 가지고 있었다. FT-IR과 Raman 분석 결과 합성 모이사나이트임을 확인하였고, 확대검사 결과 무색을 제외한 나머지 샘플에서 코팅의 흔적이 발견되었다. EDXRF 분석 결과 무색 샘플을 제외한 모든 샘플의 코팅부분에서 Ca, Ti, Co의 미량원소가 검출되었다. 무색 샘플의 Raman 분석에서 탄소 원자의 sp3 bonding에 의해 생성되는 1332 cm-1 또는 graphite와 관련된 sp2 bonding에 의해 생성되는 ~1550 cm-1는 발견되지 않았다. 무색 샘플의 SEM 이미지에서도 코팅의 흔적은 발견되지 않았으나, TEM 이미지에서 3~8 nm의 코팅층의 존재가 발견됐다. EDX line 프로파일과 EDX elements map을 통해 무색 샘플의 코팅층을 구성하는 원소는 C, Si, O로 추정된다.

Interface Control to get Higher Efficiency in a-Si:H Solar Cell

  • Han, Seung-Hee;Kim, En-Kyeom;Park, Won-Woong;Moon, Sun-Woo;Kim, Kyung-Hun;Kim, Sung-Min
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.193-193
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    • 2012
  • In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

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임상가를 위한 특집 2 - 티타늄 임플란트 표면처리에서의 나노테크놀로지 (Nanotechnology in the Surface Treatment of Titanium Implant.)

  • 오승한
    • 대한치과의사협회지
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    • 제48권2호
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    • pp.106-112
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    • 2010
  • 아직까지 나노관련 기술이 티타늄 임플란트에 직접적으로 사용되는 부분이 상당히 미약하다. 하지만, 수직으로 정렬된 구조를 가지는 티타니아 나노튜브는 생체 내 대부분의 임플란트 재료로 사용되는 티타늄의 차세대 개발에 있어서 가장 중요한 영향을 미칠 것이다. 본문에 설명되어 있는 내용들 뿐 만이라, 티타니아 나노튜브는 파골세포의 골 흡수성 방지, 줄기세포의 특정 성체세포로의 분화, 연골세포의 재분화, 간세포를 이용한 생물 반응기(bio-reactor) 개발 등 생체재료의 여러 분야에서 많이 연구되고 있다. 특히, 줄기세포에 관한 연구는 차세대 임플란트 개발에 있어서 가장 중요한 연구 분야 중의 하나로서, 골을 형성하는 조골세포와 골을 파괴하는 피골세포 모두 줄기세포 로부터 만들어진다는 것을 유념해야 할 것이다. 만약, 티타니아 나노튜브의 독특한 나노구조를 이용하여 줄기세포의 조골세포로의 직접 분회를 제어하는 기술이 개발되어 상업화된다면, 이 기술을 기반으로 하여 현 재까지 개발된 모든 표면 증착 및 코팅 기술을 새롭게 이용하는 차세대 티타늄 임플란트의 개발을 위한 초석이 되리라고 본다.

NbOx 박막의 결정도에 따른 Threshold Switching 특성 변화 연구

  • 김종일;김종기;이규민;김영재;손현철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.353-353
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    • 2014
  • 본 연구에서는 Sputter를 이용하여 Room Temp.에서 증착된 NbOx 박막의 열처리에 따른 결정도를 분석하고, 이러한 결정도의 변화가 Metal Insulator Transition특성에 의한 Threshold switching에 어떠한 영향을 미치는 지에 대하여 연구하였다. NbOx 박막의 threshold switching 특성 분석을 위해, 1.4um의 TiN 위에 15nm의 NbOx를 증착하고 Top Electrode로 Pt를 증착하여 측정하였다. 증착된 NbOx는 Nb metal target으로 Reactive Sputter를 이용하여 Room Temp.에서 증착하였으며, 조성은 Partial Oxygen Pressure를 이용하여 조절하였다. 증착된 박막의 결정도는 TEM 및 XRD를 통하여 분석하였고 조성은 XPS를 이용하여 분석하였다. Sputter로 NbOx 증착 시 Partial Oxygen Pressure에 따른 조성을 XPS로 확인한 결과, Partial Oxygen Pressure 2%에서 NbOx의 조성을, 5%이상일 경우, Nb2O5의 조성을 가지는 것으로 확인되었다. Partial Oxygen Pressure 2%에서 증착한 NbOx 박막의 열처리에 따른 결정도를 분석한 결과, As-Dep상태에서는 amorphous상태였다가 600'C이상으로 1분간 열처리를 하였을 때 NbOx의 결정도가 증가함을 확인하였다. I-V 특성 측정 결과, 열처리 온도가 증가함에 따라 initial current가 점진적으로 증가하는 경향을 보이는데, 이는 열처리 시 amorphous상에서 poly-crystalline으로 미세구조의 변화가 일어나면서 grain boundary가 생성되며 생성된 grain boundary를 통해 leakage current가 증가하는 것으로 추측된다. 또한, 결정도가 증가함에 따라 electro-forming voltage가 감소하는 경향을 보이며 안정된 threshold switching 특성을 보이고 있다. 특히, 700'C 1분간 열처리 시에는 electro-forming 과정이 없이 threshold switching이 나타나는 현상이 관찰되었다. 이로 미루어 보아, threshold switching에서 나타나는 forming 현상은 local joule heating에 의해 박막이 결정화 되는 과정으로 추측된다. 결론적으로, 박막의 결정도가 initial current 및 Threshold switching 특성에 큰 영향을 미치는 것으로 예상된다.

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전기화학적인 방법에 의한 반응성 염료폐수의 처리 (Treatment of reactive dyes wastewater by electrochemical method)

  • 유재정;전성환;박정민;정제호;박상정;민경석
    • 한국물환경학회지
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    • 제18권3호
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    • pp.245-251
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    • 2002
  • Reactive dyes waste water, a toxic and refractory pollutant, was treated by an electrochemical method using $Ti/IrO_2$ as anode and Stainless Steel 316 as cathode. In this technique, sodium chloride as an electrolyte was added. A number of experiments were run in a batch system. Artificial samples (reactive blue 19, red 195, yellow 145) were used. Operation parameters, such as supporting electrolyte concentration, current density, pH and sample concentration have been investigated for their influences on COD and color removal efficiencies during electrolysis. After 5 and 90 minites of eletrolysis, color was reduced by 51.5% and 98.9% respectively. Under the condition of current density $10A/dm^2$, NaCl concentration 12mg/l and pH 3, 62.9% of $COD_{Cr}$ was removed after electrolysis for 90 minites. The optimum condition of color removal and COD reduction in this work was found to be the following : pH 3, sodium chloride concentration 20g/l, current density $10A/dm^2$. As a result, we confirmed to be effective to color removal and reduction of refractory organic material.

파우더와 솔더를 이용한 저비용 비아홀 채움 공정 (Low Cost Via-Hole Filling Process Using Powder and Solder)

  • 홍표환;공대영;남재우;이종현;조찬섭;김봉환
    • 센서학회지
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    • 제22권2호
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    • pp.130-135
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    • 2013
  • This study proposed a noble process to fabricate TSV (Through Silicon Via) structure which has lower cost, shorter production time, and more simple fabrication process than plating method. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process. The via hole was $100{\mu}m$ in diameter and $400{\mu}m$ in depth. A dielectric layer of $SiO_2$ was formed by thermal oxidation on the front side wafer and via hole side wall. An adhesion layer of Ti and a seed layer of Au were deposited. Soldering process was applied to fill the via holes with solder paste and metal powder. When the solder paste was used as via hole metal line, sintering state and electrical properties were excellent. However, electrical connection was poor due to occurrence of many voids. In the case of metal powder, voids were reduced but sintering state and electrical properties were bad. We tried the via hole filling process by using mixing solder paste and metal powder. As a consequence, it was confirmed that mixing rate of solder paste (4) : metal powder (3) was excellent electrical characteristics.

광촉매공정 적용시 축산폐수의 처리특성 및 최적화 (Optimization and Characteristics of Removal Condition of Livestock Wastewater Using a Photocatalytic Process)

  • 박재홍
    • 청정기술
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    • 제13권3호
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    • pp.222-227
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    • 2007
  • 축산폐수처리에 광촉매공정을 적용하였을 때 운전변수 중 자외선 조사거리, 반응면적, 부유고형물(SS)농도, 컬럼직경이 처리율에 미치는 영향을 실험실 규모의 광촉매반응기를 사용하여 실험하였다. 최적운전조건은 자외선 조사거리 3 cm (7 cm 이하 권장), 반응면적 $3.6\;m^2$, SS농도 40 mg/L (300 mg/L이하 권장), 컬럼직경 5 mm (10 mm 이하 권장)로서 COD, 색도, coliform 제거율이 반응시간 300 min에서 각각 49%, 53% 100%로 나타났다. 최적운전조건에서 난분해성 COD의 제거율은 57%로 나타나 광촉매반응이 난분해성 유기물제거에 어느 정도 효과가 있는 것으로 나타났다.

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