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http://dx.doi.org/10.3365/KJMM.2012.50.2.152

Effective Cu Filling Method to TSV for 3-dimensional Si Chip Stacking  

Hong, Sung Chul (Dept. of Materials Sci. and Eng., University of Seoul)
Jung, Do Hyun (Dept. of Materials Sci. and Eng., University of Seoul)
Jung, Jae Pil (Dept. of Materials Sci. and Eng., University of Seoul)
Kim, Wonjoong (Dept. of Materials Sci. and Eng., University of Seoul)
Publication Information
Korean Journal of Metals and Materials / v.50, no.2, 2012 , pp. 152-158 More about this Journal
Abstract
The effect of current waveform on Cu filling into TSV (through-silicon via) and the bottom-up ratio of Cu were investigated for three dimensional (3D) Si chip stacking. The TSV was prepared on an Si wafer by DRIE (deep reactive ion etching); and its diameter and depth were 30 and $60{\mu}m$, respectively. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. The current waveform was varied like a pulse, PPR (periodic pulse reverse) and 3-step PPR. As experimental results, the bottom-up ratio by the pulsed current decreased with increasing current density, and showed a value of 0.38 on average. The bottom-up ratio by the PPR current showed a value of 1.4 at a current density of $-5.85mA/cm^2$, and a value of 0.91 on average. The bottom-up ratio by the 3-step PPR current increased from 1.73 to 5.88 with time. The Cu filling by the 3-step PPR demonstrated a typical bottom-up filling, and gave a sound filling in a short time.
Keywords
electronic materials; plating; defects; scanning electron microscopy (SEM); bottom-up ratio;
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  • Reference
1 Y. K. Tsuiand and S. W. Ricky, IEEE Trans. Adv. Pack. 28, 413 (2004).
2 Y. N. Kim, J. M. Koo, S. K. Park, and S. B. Jung, J. Kor. Inst. Met. & Mater. 46, 33 (2008).
3 K. Takahashi, M. Umemoto, N. Tanaka, K. Tanida, Y. Nemoto, Y. Tomita, M. Tago, and M. Bonkohara, Microelectron. Reliab. 43, 1267 (2003).   DOI   ScienceOn
4 R. Hon, S. W. Ricky Lee, Shawn X. Zhang, and C. K. Wong, IEEE 2005 Elec. Pack. Tech. Conf. 384 (2005)
5 L. J. Ladani, Microelectron. Eng. 87, 208 (2010).   DOI   ScienceOn
6 X. Gagnard and T. Mourier, Microelectron. Eng. 87, 470 (2010).   DOI   ScienceOn
7 T. Kobayashi, J. Kawasaki, K. Miura, and H. Honma, Electrochem. Acta 47, 85 (2001).   DOI   ScienceOn
8 M. Lefebvre, G. Allardyce, M. Seita, H. Tsuchida, M. Kusaka, and S. Hayashi, Circuit World 29, 9 (2003).   DOI   ScienceOn
9 C. Lee, S. Tsuru, Y. Kanda, S. Ikeda, and M. Matsumura, J. Electrochem. Soc. 156, D543 (2009).   DOI   ScienceOn
10 K. Y. K. Tsui, S. K. Yau V. C. K. Leung, P. Sun, and D. X. Q. Shi, Proceed. Intl Conf. on Electronic Pack. Tech. & High Density Pack. (ICEPT-HDP), p. 23, IEEE, Beijing, (2009).
11 A. Pohjoranta and R. Tenno, J. Electrochem. Soc., 154, D502 (2007).   DOI   ScienceOn
12 Z. Wang, O. Yaegashi, H. Sakaue, T. Takahagi, and S. Shingubara, J. Electrochem. Soc. 151, C781 (2004).   DOI   ScienceOn
13 S. Shingubara, Z. Wang, O. Yaegashi, R. Obata, H. Sakaue, and T. Takahagi, Electrochemical and Solid-State Letters 7, C78 (2004).   DOI   ScienceOn
14 S. L. Ko, J. Y. Lin, Y. Y. Wang, and C. C. Wan, Thin Solid Films 516, 5046 (2008).   DOI   ScienceOn
15 W. P. Dow, M. Y. Yen, W. B. Lin, and S. W. Ho, J. Electrochem. Soc. 152, C769 (2005).   DOI   ScienceOn
16 M. E. Huerta Garrido and M. D. Pritzker, J. Electrochem. Soc. 155, D332 (2008).   DOI   ScienceOn
17 R. Beica, C. Sharbono, and T. Ritzdorf, Electronic Components and Technology Conference, p. 577-583 (2008).
18 J. Mendez, R. Akolkar, and U. Landau, J. Electrochem. Soc. 156, D474 (2009).   DOI   ScienceOn
19 R. Kim, J. K. Park, Y. C. Chu, and J. P. Jung, Korean J. Met. Mater. 48, 667 (2010).
20 I. R. Kim, S. C. Hong, and J. P. Jung, Korean J. Met. Mater. 49, 388 (2011).
21 S. C. Hong, W. G. Lee, W. J. Kim, J. H. Kim, and J. P. Jung, Microelectron. Reliab. 51, 2228 (2011).   DOI   ScienceOn
22 K. S. Kim, Y. C. Lee, J. H. Ahn, J. Y. Song, C. D. Yoo, and S. B. Jung, Korean J. Met. Mater. 48, 1028 (2010)   DOI   ScienceOn
23 Y. Zhang, T. Richardson, S. Chung, C. Wang, B. Kim, and C. Rietmann, Microsystems, Packaging, Assembly and Circuits Technology, IMPACT 2007. International p. 219-222 (2007).
24 S. W. Lee, F. G. Shi, and S. D. Lopatin, J. Electron. Mater. 32, 272 (2003).   DOI   ScienceOn
25 J. M. Lim and C. M. Lee, Solid-State Electron. 45, 2083 (2001).   DOI   ScienceOn
26 J. P. Jung, W. G. Lee. S. C. Hong, D. H. Jung, and J. H. Kim, Korean. Patent, 10-2011-0069604 (2011).