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Low Cost Via-Hole Filling Process Using Powder and Solder

파우더와 솔더를 이용한 저비용 비아홀 채움 공정

  • Hong, Pyo-Hwan (School of Electronics Engineering, Kyungpook National University) ;
  • Kong, Dae-Young (School of Electronics Engineering, Kyungpook National University) ;
  • Nam, Jae-Woo (School of Electronics Engineering, Kyungpook National University) ;
  • Lee, Jong-Hyun (School of Electronics Engineering, Kyungpook National University) ;
  • Cho, Chan-Seob (School of Electrical Engineering, Kyungpook National University) ;
  • Kim, Bonghwan (Department of Electronics Engineering, Catholic University of Daegu)
  • 홍표환 (경북대학교 전자전기컴퓨터학부) ;
  • 공대영 (경북대학교 전자전기컴퓨터학부) ;
  • 남재우 (경북대학교 전자전기컴퓨터학부) ;
  • 이종현 (경북대학교 전자전기컴퓨터학부) ;
  • 조찬섭 (경북대학교 산업전자전기공학부) ;
  • 김봉환 (대구가톨릭대학교 전자공학과)
  • Received : 2012.12.07
  • Accepted : 2013.03.07
  • Published : 2013.03.31

Abstract

This study proposed a noble process to fabricate TSV (Through Silicon Via) structure which has lower cost, shorter production time, and more simple fabrication process than plating method. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process. The via hole was $100{\mu}m$ in diameter and $400{\mu}m$ in depth. A dielectric layer of $SiO_2$ was formed by thermal oxidation on the front side wafer and via hole side wall. An adhesion layer of Ti and a seed layer of Au were deposited. Soldering process was applied to fill the via holes with solder paste and metal powder. When the solder paste was used as via hole metal line, sintering state and electrical properties were excellent. However, electrical connection was poor due to occurrence of many voids. In the case of metal powder, voids were reduced but sintering state and electrical properties were bad. We tried the via hole filling process by using mixing solder paste and metal powder. As a consequence, it was confirmed that mixing rate of solder paste (4) : metal powder (3) was excellent electrical characteristics.

Keywords

References

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