• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.29-34
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• 1992

Phase transition, dielectric properties, and leakage current characteristics of Ta2O5 thin film fabricated by sol-gel process with tantalum penta-n-butoxide were studied as a function of annealing temperature in O2 atmoshpere. Although Ta2O5 thin film annealed at temperatures below 700$^{\circ}C$ for 1 hr was amorphous, it was crystallized to ${\beta}$-Ta2O5 of orthorhombic phase by annealing at temperatures higher than 750$^{\circ}C$. With increasing annealing temperature from 500$^{\circ}C$ to 900$^{\circ}C$, dielectric constant of sol-gel processed Ta2O5 thin film was changed from 17.6 to 15.3 due to the increase of SiO2 thickness at Ta2O5/Si interface. For Ta2O5 thin film annealed at 500$^{\circ}C$ to 800$^{\circ}C$ for 1 hr in O2 atmosphere, leakage current was remarkably reduced and breakdown strength was increased with higher annealing temperature. For Ta2O5 film annealed at 800$^{\circ}C$, breakdown did not occur even at electric field strength of 30${\times}$105V/cm and leakage current was maintained lower than 10-8A/$\textrm{cm}^2$.

• Proceedings of the KIEE Conference
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• 2008.05a
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• pp.175-176
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• 2008

In this study, the sintering properties and structural properties of the $Mg_5Ta_4O_{15}$cation-deficient perovskite ceramics with $Li_2CO_3$ additions are investigated. The cation-deficient perovskite ceramics are prepared through the solid-state route. According to the XRD pattern, $Mg_4Ta_2O_9$, $MgTa_2O_6$ and $Mg_5Ta_4O_{15}$ phase existed in sintered pure $Mg_5Ta_4O_{15}$ ceramics. With $Li_2CO_3$, additions, the peak intensities of $Mg_4Ta_2O_9$ and $MgTa_2O_6$ phase were reduced. Also, diffraction intensity of the $Mg_5Ta_4O_{15}$ phase was increased with increments of $Li_2CO_3$ additions. The bulk densities were increased with increasing of $Li_2CO_3$ amount and approach the theoretical density of the $Mg_5Ta_4O_{15}$ ceramics, more and more. Microstructure of the $Mg_5Ta_4O_{15}$ ceramics were densified more and more by additions of $Li_2CO_3$. The bulk density of $Mg_5Ta_4O_{15}$+5wt% $Li_2CO_3$ ceramics sintered at $1500^{\circ}C$ for 10 hours was $5.88g/cm^3$.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.863-870
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• 2002

The Single phase $Pb(Fe_{1/2}Ta_{1/2})O_3$ (x=0.0∼1.0) solid solutions were successfully synthesized and their ordering structures as well as dielectric properties were investigated ${{r(Nb^{5+})=r(Ta^{5+})=0.78 {\AA},\;AW(Nb^{5+})=92.91,\;AW(Ta^{5+})=180.95}}$. While $Pb(Fe_{1/2}Ta_{1/2})O_3$ showed typical relaxor ferroelectric characteristics such as dielectric relaxation and diffuse phase transition, the sharpeness of the phase transition increased as $Ta^{5+}$ was replaced by $Nb^{5+}$ and finally $Pb(Fe_{1/2}Nb_{1/2})O_3$ showed normal ferroelectric characteristics with no dielectric relaxation. By using Raman spectroscopy, it was revealed that the $Fe^{3+}\;and\;Ta^{5+}\;of\;Pb(Fe_{1/2}Ta_{1/2})O_3$ were stoichiometrically 1:1 ordered within the short range which can be hardly probed even by TEM. Also, The degree of ordering in $Pb(Fe_{1/2}Ta_{1/2})O_3$ decreased as $Ta^{5+}$ was replaced by $Nb^{5+}$ and finally $Fe^{3+}\;and\;Nb^{5+}\;of\;Pb(Fe_{1/2}Nb_{1/2})O_3$ were completely disordered. The relaxor ferroelectric characteristics of $Pb(Fe_{1/2}Ta_{1/2})O_3$ could be correlated with the stoichiometric 1:1 ordering of B-site cations within the short range which can be hardly probed even by TEM. Also, the decrease of the relaxor ferroelectric characteristics with the replacement of $Ta^{5+}\;by\;Nb^{5+}$ could be correlated with the weakening of the ordering and the normal ferroelectric characteristics of $Pb(Fe_{1/2}Nb_{1/2})O_3$ could be correlated with the complete disordering of B-site cations.

• Korean Journal of Materials Research
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• v.12 no.10
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• pp.814-819
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• 2002

TiN and TaN films as electrode materials of reactive sputtered $Ta_2$$O_{5}$ were prepared by sputtering to compare their thermal stabilities with $Ta_2$$O_{5}$ The microstructural change of $Ta_2$$O_{5}$ films with annealing was also investigated. As- deposited $Ta_2$$O_{5}$ film on $SiO_2$ was amorphous and annealing of 80$0^{\circ}C$ for 30 min made it transform to $\beta$-Ta$_2$O$_{5}$ crystalline which contains amorphous particles with the size of a few nm. Crystallization temperature of Ta$_2$Ta_2$$O_{5}$ on TaN is higher than that on TiN electrode. The interface between TaN and Ta$_2$O$_{5}$ maintained stably even after vacuum annealing up to $800^{\circ}C$ for 1 hr, but TiN interacted with $Ta_2$$_O{5}$ and so interdiffusion between TiN and $Ta_2$$O_{5}$ occurred by vacuum annealing of 80$0^{\circ}C$ for 1 hr. It indicates that TaN is thermally more stable with $Ta_2$$O_{5}$ than TiN.N.

• Korean Journal of Metals and Materials
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• v.50 no.11
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• pp.823-828
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• 2012

Direct reduction of $Ta_2O_5$ using liquid calcium was investigated. The experiment was conducted in a closed stainless steel chamber in an Ar atmosphere for 5-120 minutes. Most of $Ta_2O_5$ was reduced to ${\alpha}-Ta$ in 30 minutes above 1173 K and at a molar ratio of Ca and $Ta_2O_5$ above 10. The particles size increased with the reaction temperature, but it did not change much above 1223 K. The oxygen content of metal Ta was about 1 wt%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.256-257
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• 2014

The effects of the preparation conditions of ZnO-modified TaON on the photocatalytic activity for degradation of rhodamine B dye (Rh. B) under simulated solar light were investigated. The ZnO/TaON nanocomposite were prepared by loading particulate $Ta_2O_5$ with ZnO using different ZnO contents, followed by thermal nitridation at 1123 K for 5 h under $NH_3$ flow (20 ml min.1). The asprepared samples were characterized by XRD, UV-Vis-DRS, and SEM-EDX. The results revealed that the band gap energy absorption edge of as prepared nanocomposite samples was shifted to a longer wavelength as compared to ZnO and $Ta_2O_5$, and the 60 wt% ZnO/TaON nanocomposite exhibited the highest percentage (99.2 %) of degradation of Rh. B and the highest reaction rate constant ($0.0137min^{-1}$) in 4 h which could be attributed to the enhanced absorption of the ZnO/TaON nanocomposite photocatalyst. Hence, these results suggest that the ZnO/TaON nanocomposite exhibits enhanced photocatalytic activity for the degradation of rhodamine B under simulated solar light irradiation in comparison to the commercial ZnO, $Ta_2O_5$, and TaON.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.283.2-283.2
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• 2013

The variation of chemical and interfacial state during the growth of Ta2O5 films on the Si substrate by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor Ta(NtBu)(dmamp)2Me was used as the metal precursor, with Ar as a purging gas and H2O as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of Ta2O5 growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the Ta5+ state, which corresponds with the stoichiometric Ta2O5, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between Ta2O5 and Si. The measured valence band offset value between Ta2O5 and the Si substrate was 3.08 eV after 2.5 cycles.