• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.35-38
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• 2003

Polymer light emitting diode (PLED) with an ITO/MEH-PPV/Al structure were prepared by spin coating method on the ITO (indium tin oxide)/glass substrates, using poly(2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene (MEH-PPV) as the light emitting material. The dependence of heat treatment on the electrical and optical properties for the prepared PLED samples were investigated. The luminance decreased greatly from 630 cd/$\m^2$ to 280 cd/$\m^2$ at 10V input voltage as the heating temperature increased from $65^{\circ}C$ to $170^{\circ}C$. In addition, the luminance efficiency was found to be about 2 lm/W for the sample heat treated at $65^{\circ}C$. These results may be related to the interface roughness and/or the formation of an insulation layer, which is caused by the reaction between electrode and MEH-PPV organic luminescent film layer.

• Journal of Magnetics
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• v.7 no.4
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• pp.147-150
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• 2002

The pinning direction, the spin flop behaviors and the magnetoresistive properties in top synthetic spin valve structure [NiFe/CoFe/Cu/CoFe (t$_{p2}$)/Ru/CoFe (t$_{p1}$)/IrMn] were investigated. The magnetoresistive and pinning characteristics of synthetic spin valves strongly depended on the differences in the two pinning layer thickness, ${\Delta}t(=t_{p2}-t_{p1})$. In contrast to the conventional spin valves, the pinning direction (P1) was canted off with respect to the growth field axis with ${\Delta}t$. We found that the canting angle ${\Phi}$ had different values according to the annealing field direction and ${\Delta}t$. When the samples were annealed at above the blocking temperature of IrMn with zero fields, the canted pinned layer could be set along the growth field axis. Because the easy axis which was induced by the growth field during deposition is still active in all ferromagnetic layers except the IrMn at $250{^{\circ}C}$, the pinning direction could be aligned along the growth field axis, even in 0 field annealing.

• Journal of Magnetics
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• v.17 no.1
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• pp.6-8
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• 2012

M$\ddot{o}$ssbauer spectra of hexagonal $BaFe_{12}O_{19}$ single crystals were studied at various temperatures (4-300 K). It was found that the spin states in Fe atoms were parallel to the ${\gamma}$-ray's direction into a single crystal along the caxis. The location of the Fe ion in the 2b site is unusual in an oxide structure and has strong anisotropic lattice vibrations. Moreover, at room temperature, the zero absorption lines of the Fe ions at the 2b site were observed due to fast diffusion motion in a double well atomic potential. The two Fe ions of the single crystal mainly enter into the sites in the mirror plane of the trigonalbipyramidal structure.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.171-176
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• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.236-241
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• 2011

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

• Polymer(Korea)
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• v.35 no.2
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• pp.130-135
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• 2011

Along with the fast development of electronics, the demands of portable electronics and wireless sensors are growing rapidly. The need for self-powering materials capable of powering the electrical devices attached to them is increasing, The piezoelectric effect of polyvinylidene fluoride (PVDF) can be used for this purpose. PVDF has a special crystal structure consisting of a ${\beta}$-phase that can produce piezoelectricity. In this paper, multilayer PVDF films were fabricated to increase the ${\beta}$-phase content. A solution of 10% concentration N;N-dimethylacetamide (DMAc) in PVDF (PVDF/DMAc) was used to fabricate the films via spin coating technique with the following optimum process parameters: a spin rate of 850 rpm, spin time of 60 s, drying temperature of $60^{\circ}C$, and drying time of 30 min, Compared with single-layer PVDF films, the multilayer films exhibited higher ${\beta}$-phase content. The ${\beta}$-phase content of the films increased gradually with increasing number of layers until 4, Maximum ratio of ${\beta}$-phase content was 7.72.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.22-25
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• 2007

In this research, magnetic properties of spin valve structures using IrMn layers as antiferromagnetic were studied depending on the thickness of the pinned layer. The spin valve structure was Si substrate/$SiO_2(2,000\;{\AA})/Mo(17\;{\AA})NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(t\;{\AA})/Ta(25\;{\AA})$. Also, Mo film was deposited on Si substrates and the thermal annealing effect was analyzed. The resistivity of the Mo film was increased as an annealing temperature was increased up to $600^{\circ}C$. The variations of MR ratio were related with magnetic exchange coupling field of the spin valve structures for various IrMn pinned layer thickness up to 130 ${\AA}$. MR ratio and $H_{ex}$ of spin valves was about 9.05% and 277.5 Oe when the thickness of the IrMn pinned layer was $32.5\;{\AA}(t=32.5\;{\AA})$. It was increased to 9.65% and 337.5 Oe for $t=65\;{\AA}$. For $t=97.5\;{\AA}$, the MR ratio and Hex decreased to 8.2% and 285 Oe, and further decrease was observed up to $t=130\;{\AA}$.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.240-244
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• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Journal of the Korean Magnetics Society
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• v.27 no.4
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• pp.115-122
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• 2017

The antiferromagnet IrMn based four different GMR-SV multilayers on Corning glass were prepared by using ion beam deposition and DC magnetron sputtering system. The magnetoresistance (MR) properties for single-type and dual-type GMR-SV multilayer films were investigated through the measured major and minor MR curves. The exchange bias coupling field ($H_{ex}$) and coercivity ($H_c$) of pinned layer, the $H_c$ and interlayer exchange coupling field ($H_{int}$) of free layer for the dual-type structure GMR-SV multilayer films consisted of top IrMn layer were 410 Oe, 60 Oe, 1.6 Oe, and 7.0 Oe, respectively. The minor MR curve of two free layers was performed the squarelike feature having a MR ratio of 8.7 % as the sum of 3.7 % and 5.0 %. The value of average magnetic field sensitivity (MS) was maintained at 2.0 %/Oe. Also, the magnetoresistance properties of the single-type and dual-type structure GMR-SV multilayer films consisted of bottom IrMn layer were decreased more than those of top IrMn layer. Two antiparallel states of magnetization spin arrays of the pinned and free layers in the dual-type GMR-SV multilayer films occurred the maximum MR value by the effect of spin dependence scattering.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.28-33
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• 2006

La substituted perovskite $BiFeO_3$ have been prepared by a sol-gel method. Magnetic and structural properties of the powders were characterized with Mossbauer spectroscopy, XRD, SEM, and TG-DTA. The crystal structure is found to be a rhombohedrally distorted perovskite structure with the lattice constant $\alpha=3.985{\AA}\;and\;\alpha=89.5^{\circ}.\;Bi_{2/3}La_{1/3}FeO_3$ powders that were annealed at and above $600^{\circ}C$ have a single-phase perovskite structure. However, powders annealed at $900^{\circ}C$ have a typical perovskite structure with small amount of $Bi_2O_3$ phase. The Neel temperature of $Bi_{2/3}La_{1/3}FeO_3$ is found to be $680\pm3K$. The isomer shift value at room temperature is found to be 0.27 mm/s relative to the Fe metal, which is consistent with high-spin $Fe^{3+}$ charge states. Debye temperature far$Bi_{2/3}La_{1/3}FeO_3$ is found to be $305\pm5K$. The average hyperfine field $H_{hf}(T)$ of the $Bi_{2/3}La_{1/3}FeO_3$, shows a temperature dependence of $[H_{hf}(T)-H_{hf}(0)]/H_{hf}(0)=-0.42(T/T_N)^{3/2}-0.13(T/T_N)^{5/2}$ for $T/T_N<0.7$ indicative of spin-wave excitation.