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http://dx.doi.org/10.4283/JKMS.2006.16.5.240

Magnetoresistance Properties of Spin Valves Using MoN Underlayer  

Kim, Ji-Won (School of Electronic Engineering, Soongsil University)
Jo, Soon-Chul (School of Electronic Engineering, Soongsil University)
Kim, Sang-Yoon (Dept. of Nano & Electronic Physics Kookmin University)
Ko, Hoon (Dept. of Nano & Electronic Physics Kookmin University)
Lee, Chang-Woo (Dept. of Nano & Electronic Physics Kookmin University)
Abstract
In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.
Keywords
GMR; spin valve; underlayer; MoN;
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1 H. G. Cho, Y. K. Kim, and S.-R. Lee, Journal of Magnetics, 7(4), 147 (2002)   DOI   ScienceOn
2 M. Pakala, Y. Huai, and G. Anderson, IEEE Trans. Magnetics, 36(5), 2620 (2000)   DOI   ScienceOn
3 Z. Qian, J. M. Daughton, D. Wang, and M. Tondra, IEEE Trans. Magnetics, 39(5), 3322 (2003)   DOI   ScienceOn
4 E. W. Hill, IEEE Trans. Magnetics, 36(5), 2785 (2000)   DOI   ScienceOn
5 Y.-G. Yoo, S.-C. Yu, S.-G. Min, K.-S. Kim, and P.-W. Jang, Journal of Magnetics, 6(4), 129 (2001)
6 B. Dieny, V. S. Speriosu, S. Metin, S. S. P. Parkin, B. A. Gurney, P. Baumgart, and D. R. Wilhoit, J. Appl. Phys., 69(8), 4774 (1991)   DOI