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http://dx.doi.org/10.4283/JKMS.2007.17.1.022

Magnetic Properties of Top-type Spin Valve Structure for Various Thickness of IrMn Antiferromagnet  

Kim, Sang-Yoon (Dept. of Nano & Electronic Physics Kookmin University)
Ko, Hoon (Dept. of Nano & Electronic Physics Kookmin University)
Choi, Kyoung-Ho (Dept. of Nano & Electronic Physics Kookmin University)
Lee, Chang-Woo (Dept. of Nano & Electronic Physics Kookmin University)
Kim, Ji-Won (School of Electronic Engineering, Soongsil University)
Jo, Soon-Chul (School of Electronic Engineering, Soongsil University)
Abstract
In this research, magnetic properties of spin valve structures using IrMn layers as antiferromagnetic were studied depending on the thickness of the pinned layer. The spin valve structure was Si substrate/$SiO_2(2,000\;{\AA})/Mo(17\;{\AA})NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(t\;{\AA})/Ta(25\;{\AA})$. Also, Mo film was deposited on Si substrates and the thermal annealing effect was analyzed. The resistivity of the Mo film was increased as an annealing temperature was increased up to $600^{\circ}C$. The variations of MR ratio were related with magnetic exchange coupling field of the spin valve structures for various IrMn pinned layer thickness up to 130 ${\AA}$. MR ratio and $H_{ex}$ of spin valves was about 9.05% and 277.5 Oe when the thickness of the IrMn pinned layer was $32.5\;{\AA}(t=32.5\;{\AA})$. It was increased to 9.65% and 337.5 Oe for $t=65\;{\AA}$. For $t=97.5\;{\AA}$, the MR ratio and Hex decreased to 8.2% and 285 Oe, and further decrease was observed up to $t=130\;{\AA}$.
Keywords
GMR; spin valve; IrMn; Mo underlayer;
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