• Journal of IKEEE
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• v.24 no.2
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• pp.409-418
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• 2020

In this paper, an integrated optical, evanescent-wave biosensor utilizing a multimode interferometer based on a Si₃N₄ rib-optical waveguide consisting of the Si/SiO₂/Si₃N₄/SiO₂ stacked structure was described. The theoretical background of the multimode interferometer was reviewed, and the structure and design process were presented through numerical computational analysis. We analyzed how the dimension (length, width) of the multimode interferometer affected the sensor performance. It has been confirmed through computational analysis that the changes in the refractive index of an analyte greatly affect the mode pattern formation position and output optical power of a multimode interferometer, and proved that this principle could be applied to integrated-optic biosensor.

• Journal of the Korean institute of surface engineering
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• v.38 no.3
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• pp.89-94
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• 2005

We investigate the reaction stability of cobalt and nickel with side-wall materials of $SiO_2\;and\;Si_3N_4$. We deposited 15nm-Co and 15nm-Ni on $SiO_2(200nm)/p-type$ Si(100) and $Si_3N_4(70 nm)/p-type$ Si(100). The samples were annealed at the temperatures of $700\~1100^{\circ}C$ for 40 seconds with a rapid thermal annealer. The sheet resistance, shape, and composition of the residual materials were investigated with a 4-points probe, a field emission scanning electron microscopy, and an AES depth profiling, respectively. Samples of annealed above $1000^{\circ}C$ showed the agglomeration of residual metals with maze shape and revealed extremely high sheet resistance. The Auger depth profiling showed that the $SiO_2$ substrates had no residual metallic scums after $H_2SO_4$ cleaning while $Si_3N_4$ substrates showed some metallic residuals. Therefore, the $SiO_2$ spacer may be appropriate than $Si_3N_4$ for newly proposed Co/Ni composite salicide process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.301-307
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• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1102-1107
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• 1999

SiC-Si3N4 composites were prepared by mixing $\alpha$-Si3N4 powder to $\alpha$-SiC powder in the range of 10 to 30 vol% with 10vol% interval. 6wg% Al2O3 and 6wt% Y2O3 were respectively added as sintering aids. Hot pressing was performed at 1,80$0^{\circ}C$ for 1 hour with 25 MPa pressure. In the case of adding 20vol% of $\alpha$-Si3N4 powder the relative density to theoretical value and the flexural strength were 99.1% and 34,420 MPa respectively and the worn amount was 2.09$\times$10-3 mm2 which were the highest values in the all range of he composition. Although the composite containig 10 vol% of $\alpha$-Si3N4 powder showed the highest fracture toughness(KIC) of 4.65MN/m3/2 the reduction of the wear resistance in this composite is likely to be affected by the homogeneity and the uniformity of the grain coalescence and growth during the sintering process.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.69-73
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• 1994

Si3N4 ceramics could be densified above 3.2g/㎤ with pressureless sintering at below 178$0^{\circ}C$ by coating Si3N4 and Y2O3 powder with an alumina sol. Substitution a portion of Al2O3 with AlN improved densification. Additional milling of the coated powder in large improvement in bending strength greater than 800 MPa (4-point).

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.699-705
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• 1995

Effect of the grain boundary phases in Si$_3$N$_4$ ceramics on the fracture tonghness has been investigated. The Si$_3$N$_4$-Y$_2$O$_3$-SiO$_2$, (YS) and Si$_3$N$_4$-Y$_2$O$_3$-Al$_2$O$_3$(YA) systems were Can/HIP treated at 1750$^{\circ}C$ and then heat-treated at 1800∼2000$^{\circ}C$. The fracture toughness of the YA system, the grain boundary phase was only glass phase after heat-treatement, was increased. That of the YS system, however, the grain boundary phase was changed from crystalline and glass to glass phase after the heat -treatement above 1900$^{\circ}C$, was abruptly decreased. The reason of the sudden drop of the fracture toughness of the YS system was believed that the change of the grain boundary phases from crystalline and glass to glass phase effected un the fracture behavior.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.240-245
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• 2007

AlN thin film for SAW filter application was deposited on (100) silicon, sapphire, $Si_{3}N_{4}$/Si, and $Al_{2}O_{3}$/Si substrates by reactive magnetron sputtering method, respectively. The structural characteristics were dependent on the structure of substrates. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD) and Atomic Force Microscope (AFM) have been used to analyze structural properties and preferred orientation of AlN thin films. Preferred orientation and SAW characteristic of AlN were improved by insertion of $Al_{2}O_{3}$ buffer layer. Insertion loss of SAW devices using AlN/Si and AlN/$Al_{2}O_{3}$/Si were about 33.27 dB and 30.20 dB, respectively.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.22-27
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• 2001

$\beta$-Si$_3$N$_4$종자입자 첨가가 소결조제로 Y-Mg-Si-Al-O-N계 oxynitride glass를 사용하여 일축가압 소결을 행한 SiC-Si$_3$N$_4$복합재료의 미세구조와 기계적 특성에 미치는 영향을 고찰하였다. 길게 자란 $\beta$-Si$_3$N$_4$입자들과 등방성의 $\beta$-SiC 입자들이 균일하게 분포된 미세구조를 얻었다. $\beta$-Si$_3$N$_4$종자입자 함량이 증가함에 따라 SiC-Si$_3$N$_4$복합재료의 강도와 파괴인성이 증가하였고, 이는 복합화에 기인하는 결함크기의 감소와 길게 자란 $\beta$-Si$_3$N$_4$입자에 의한 균열가교 및 균열회절 등에 기인하였다. SiC-70 wt% Si$_3$N$_4$복합재료의 대표적인 강도와 파괴인성은 각각 770 MPa과 6.2 MPa.m$^{1}$2/ 이었다.

• Membrane Journal
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• v.14 no.4
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• pp.312-319
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• 2004

The porous SiO$_2$-B$_2$O$_3$ membrane was prepared from Si(OC$_2$$H_5$)$_4$-($CH_3$O)$_3$B-C$_2$$H_5$OH-$H_2O$ system by sol-gel method. In order to investigate the characteristics of this membrane, we examined that using BET, IR spectrophotometer, X-ray diffractometer, SEM and TEM. At $700^{\circ}C$, the surface area of SiO$_2$-B$_2$O$_3$ membrane was 354.398 $m^2$/, the median pore diameter was 0.0048 ${\mu}{\textrm}{m}$, and the particle size of SiO$_2$-B$_2$O$_3$ membrane was 7 nm. The separation properties of the gas mixture ($H_2$/$N_2$) through the SiO$_2$-B$_2$O$_3$ membrane was studied as a function of pressure. The real separation factor($\alpha$) of SiO$_2$-B$_2$O$_3$ membrane for $H_2$/$N_2$ gas mixture was 4.68 at 155.15 cmHg and $25^{\circ}C$. The real separation factor($\alpha$), head separation factor($\beta$) and tail separation factor((equation omitted)) were increased as the pressure of permeation cell increased.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.3
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• pp.86-92
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• 2002

In this study, experiments were carried out to investigate the characteristics of grinding and wear process of diamond wheel far ceramic materials. Normal component of grinding resistance of $Al_2$O$_3$ was less then that of $Si_3 N_4$ and $ZrO_2$. This seems to be the characteristics of ceramic tools on work pieces both of high hardness. For the case of $Si_3 N_4$ and $ZrO_2$, as the mesh number of wheel increases, the surface roughness decreases. For the case of $Al_2 O_3$, the surface roughness does not decreases. Specific binding energy decreases as the material removal rate per unit time increases. For the case of $Si_3 N_4$ and $ZrO_2$, grinding is carried out by abrasive wear processes. For the case of $Al_2 O_3$, grinding is carried out by grain shedding process due to brittle fracture.