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Characteristics of AlN thin films for SAW filters based on substrates

기판의 종류에 따른 SAW 필터용 AlN 박막의 특성

  • 고봉철 (현대자동차) ;
  • 남창우 (울산대학교 전기전자정보시스템공학부)
  • Published : 2007.05.31

Abstract

AlN thin film for SAW filter application was deposited on (100) silicon, sapphire, $Si_{3}N_{4}$/Si, and $Al_{2}O_{3}$/Si substrates by reactive magnetron sputtering method, respectively. The structural characteristics were dependent on the structure of substrates. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD) and Atomic Force Microscope (AFM) have been used to analyze structural properties and preferred orientation of AlN thin films. Preferred orientation and SAW characteristic of AlN were improved by insertion of $Al_{2}O_{3}$ buffer layer. Insertion loss of SAW devices using AlN/Si and AlN/$Al_{2}O_{3}$/Si were about 33.27 dB and 30.20 dB, respectively.

Keywords

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