• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.114-119
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• 2004

Silicon Nitride thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method at $550^{\circ}C$ using alternating exposures of $SiH_2Cl_2$ and $NH_3$, and the physical and electrical propeties of the deposited films were characterized. The thickness of the films was linearly increased with the number of deposition cycles, and the growth rate of the films was 0.13 nm/cycle with the reactant exposures of $3.0\times10^{9}$ L. The silicon nitride thin films deposited by Alf exhibited similar physical properties with the silicon nitride thin films deposited by low-pressure chemical vapor deposition (LPCVD) method in terms of refractive index and wet etch rate, lowering deposition temperature by more than 200 $^{\circ}C$. The ALD films showed the leakage current density of 0.79 nA/$\textrm{cm}^2$ at 3 MV/cm, which is lower than 6.95 nA/$\textrm{cm}^2$ of the LPCVD films under the same condition.

• Journal of the Semiconductor & Display Technology
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• v.8 no.2
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• pp.55-58
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• 2009

Density functional theory was used to investigate the adsorption and reaction of $HfCl_4$ with two hydroxyls on Si (001)-$2{\times}1$ surface in atomic layer deposition (ALD) process. We prepared a reasonable Si substrate which consisted of six inter-dimer dissociated $H_2O$ molecules and two intra-dimer dissociated $H_2O$ molecules. The $HfCl_4$must react with two hydroxyls to be a bulk-like structure. When $HfCl_4$ was adsorbed on a hydroxyl, there was energy benefit of -0.55 eV. Though there was energy loss for $HfCl_4$ to react with H of hydroxyl, thermal energy of ALD chamber would be enough to pass the energy barriers. There were five reaction pathways for $HfCl_4$ to react with two hydroxyls; inter-dimer, intra-dimer, cross-dimer, inter-row, and cross-row. Inter-row, inter-dimer and intra-dimer were relatively favorable among the five reaction pathways based on the energy difference. The electron densities between O and Hf in these three reactions were higher than the others and they had shorter Hf-O and O-O bond lengths than the other two reaction pathways.

• Polymer(Korea)
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• v.25 no.4
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• pp.468-475
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• 2001

For copolymerization of ethylene and norbornene initiated by various metallocene catalysts such as $rac-Et(Ind)_2ZrCl_2,\;rac-Me_2Si(Ind)_2ZrCl_2,\;rac-Me_2Si(Cp)_2ZrCl_2,\;and\;(n-BuCp)_2ZrCl_2$ with modified methylaluminoxane(MMAO) cocatalyst, the ${\alpha}$-olefins such as 1-hexene(H), 1-octene and 1-decene were added as a 3rd monomer. In this situation, the effects of the polymerization condition, the catalyst structure as well as the structure and the amount of added ${\alpha}$-olefin on the catalyst activity as well as the properties and structure of polymer were examined. As results, it was found that the catalyst activity and thermal property of polymer depended on not only catalyst structure but also ${\alpha}$-olefin structure. For $rac-Et(Ind)_2ZrCl_2/MMAO$ catalyst system, it was possible to get high activity and controllable $T_g$ of polymer. Among ${\alpha}$-olefins, H as a 3rd monomer exhibited the maximum enhancement in catalyst activity.

• Elastomers and Composites
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• v.54 no.4
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• pp.286-293
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• 2019

In this study, flexible poly(ethylene-ter-1-hexene-ter-divinylbenzene) was prepared using four types of metallocene catalysts (rac-Et(Ind)₂ZrCl₂, rac-SiMe₂(Ind)₂ZrCl₂, rac-SiMe₂(2-Me-Ind)₂ZrCl₂, (C₅Me₅)TiCl₂[O-2,6-ⁱPr₂(C₆H₃)]) and two types of borate catalysts (trityl tetrakisborate and dimethylanilinium tetrakisborate). The yield, catalytic activity, molecular weight, structure, composition, and thermal properties of the terpolymers prepared using the various catalysts and cocatalyst systems were evaluated. Epoxidation of the terpolymers was successfully performed and this transformation was studied by ¹H NMR and FTIR.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.262-275
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• 1994

SiC/C functionally gradient materials (FGM) were deposited on the graphite substrate by the chemical vapor deposition method. The best deposition conditions of SiC/C FGM were $1300^{\circ}C, H_2/[SiCl_4+CH_4]=10, CH_4/[$SiCl_4+CH_4]=0.5-0.6$. Despite of discontinuous input gas ratio change, the FGM of which composition was continuously changed could be obtained and continuous structural change without definite interfaces was confirmed by the SEM observation.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.850-855
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• 2002

Silica powders were prepared from $SiCl_4$-$H_2$O system by chemical vapor deposition process, and investigated on size control of the products with reaction conditions. The products were amorphous and nearly spherical particles with 130nm~50nm in size. The size distribution became narrow with the increase of [$H_2$O]/[SiCl$_4$] concentration ratio. The particle size decreased with the increase of reaction temperature, [$H_2$O]/[SiCl$_4$] concentration ratio and total flow rate. The specific surface area measured by BET method was about three times larger than that of electron microscope method.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.90-93
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• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.109-110
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• 2008

We have performed a density functional theory study to investigate the reaction of the $HfCl_4$ molecule on $H_2O$ terminated Si (001)-$(2\times1)$ surface. The reaction of the $HfCl_4$ molecule is more favorable on OH-terminated site than H-terminated site. The first $HfCl_4$ molecule is adsorbed on a OH-terminated site with 0.21 eV energy benefit. The second $HfCl_4$ molecule is adsorbed on the most adjacent OH-terminated site of the first molecule and the energy benefit is 0.28 eV. The third and forth molecules have same tendency with the first and second ones. The adsorption energies of the fifth and sixth $HfCl_4$ molecules are 0.01 eV, -0.06 eV respectively. Therefore, we find that the saturation Hf coverage is approximately 5/8 of the available hydroxyl site, which is $2.08\times10^{14}/cm^2$. Our model is well matched with an experimental study by reference.

• Tribology and Lubricants
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• v.4 no.2
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• Journal of radiological science and technology
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• v.20 no.1
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• pp.65-69
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• 1997

[ $Mg_2SiO_4(La.Ho)$ ] thermoluminescent phosphor was made by putting the $MgCl_2.6H_2O$ and $SiO_2$ and by doping the rare earth element of $LaCl_3.7H_2O$ and $HoCl_3$. The heating rate is $10^{\circ}C/sec$ for the thermoluminescent phosphor. Two peaks are found in the measured $Mg_2SiO_4(La.Ho)$ Tl glow curve at $152^{\circ}C$ and $205^{\circ}C$ when the heating rate is $5^{\circ}C/sec$. The peak value at $205^{\circ}C$ is the most sensitive to X-ray among the glow peaks. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies for Ho and La are $0.52{\sim}1.77\;eV$ respectively.