• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.14 no.5
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• pp.87-93
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• 2014

For n/m=qm+r, there is no simple divisibility rule for simple m=7 such that is the n multiply by m? This problem can be more complex for two or more digits of m. The Dunkels method has been known for generalized divisibility test method, but this method can not compute very large digits number that can not processed by computer. This paper suggests simple and exact divisibility method for m completely irrelevant n and m of digits. The proposed method sets $r_1=n_1n_2{\cdots}n_l(mod m)$ for $n=n_1n_2n_3{\cdots}n_k$, $m=m_1m_2{\cdots}m_l$. Then this method computes $r_i=r_{i-1}{\times}10+n_i(mod m)$, $i=2,3,{\cdots}k-l+1$ and reduces the digits of n one-by-one. The proposed method can be get the quotient and remainder with easy, fast and correct for various n,m experimental data.

• Journal of applied mathematics & informatics
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• v.28 no.3_4
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• pp.977-986
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• 2010

Let $X_1$, $X_2$, $\cdots$ be identically distributed negatively associated random variables with $EX_1\;=\;0$ and $E|X_1|^3$ < $\infty$. In this paper we prove $lim_{{\epsilon\downarrow}0}\;\frac{1}{-\log\;\epsilon}\sum\limits_{n=1}^\infty\frac{1}{n^2}ES_n^2I\{|S_n|\;{\geq}\;{\sigma\epsilon}n\}\;=\;2$ and $lim_{\epsilon\downarrow0}\;\epsilon^{2-p}\sum\limits_{n=1}^\infty\frac{1}{n^p}$ $E|S_n|^pI\{|S_n|\;{\geq}\;{\sigma\epsilon}n\}\;=\;\frac{2}{2-p}$ for 0 < p < 2, where $S_n\;=\;\sum\limits_{i=1}^{n}X_i$ and 0 < $\sigma^2\;=\;EX_1^2\;+\;\sum\limits_{i=2}^{\infty}Cov(X_1,\;X_i)$ < $\infty$. We consider some results of i.i.d. random variables obtained by Liu and Lin(2006) under negative association assumption.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.242-247
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• 1998

Hydrogenated amorphous carbon nitride[a-C:H(N)] films were deposited on p-type Si(100) at room temperature with bias voltage of 200 V by DC saddle-field plasma-enhanced chemical vapor deposition. Effects of the ratio of $N_2$ to $CH_4$($N_2/CH_4$), in the range of 0 and 4 on such properties as optical properties, microstucture, relative fraction of nitrogen and carbon, etc. of the films have been investigated. The thickness of the a-C:H(N) film was abruptly decreased with the addition of nitrogen, but at $N_2/CH_4$>0.5, the thickness of the film gradually decreased with the increase of the $N_2/CH_4$. The ratio of N to C(N/C) of the films was saturated at 0.25 with the increase of $N_2CH_4$. N-H, C≡N bonds of the films increased but C-H bond decreased with the increase of $N_2CH_4$.Optical band gap energy of the film decreased from 2.53 eV at the ratio of $N_2CH_4$=4.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.96-104
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• 2009

In order to lower a reaction temperature with high conversions for simultaneous catalytic reduction of NO and $N_2O$ over Pd-Rh supported mixed metal oxide honeycomb catalysts, $H_2$ or CO was utilized as a reductant. When using the reductants, the effects of reaction conditions were examined in NO and $N_2O$ conversions, where reaction temperatures, concentrations of the reductants and oxygen and the concentration ratio of $N_2O$ to NO were varied. In using $H_2$ reductant, larger than 50% of NO and $N_2O$ conversions was observed at the temperatures below $200^{\circ}C$ in absence of $O_2$. In using CO reductant, NO and $N_2O$ conversions increased from the temperatures higher than $200^{\circ}C$ and $300^{\circ}C$, respectively. However, in use of both reductants, NO and $N_2O$ conversions decreased with increasing oxygen concentration. As a result, $H_2$ reductant could reduce simultaneously NO and $N_2O$ at relatively lower reaction temperature than CO. Also, NO and $N_2O$ conversions were less influenced by using $H_2$ reductant than CO one. Concentration ratio between NO and $N_2O$ did not affect their conversions regardless the type of reductants. Pretreatment of the catalyst in $H_2$ was more effective in simultaneous reduction of NO and $N_2O$ at low reaction temperature than that in $O_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.75-78
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• 1996

The deposition condition Gf TiN films as electrode was studied by sheet resistance, TiN depositon Thickness X-ray diffraction. TiN was made by reactively DC magnetron sputtering with varying $N_2$/Ar mixture gas and substrate temperature. After finding The deposition condition of TiN films, The samples with the structure of Cu/Ta$_2$O$_{5}$, TiN/Ta$_2$O$_{5}$Si, Cu/TiN/Ta$_2$O$_{5}$ Si were prepared and were measured I-V, C-V. As a results, it was found that when TiN was deposited in an $N_2$a results, it was found that when TiN was deposited in an $N_2$atmosphere its Sheet resistance is lower n than n V$_2$Ar mixtureixture

• Journal of the Korea Society of Computer and Information
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• v.19 no.7
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• pp.71-76
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• 2014

There is to be virtually impossible to solve the very large digits of prime number p and q from composite number n=pq using integer factorization in typical public-key cryptosystems, RSA. When the public key e and the composite number n are known but the private key d remains unknown in an asymmetric-key RSA, message decryption is carried out by first obtaining ${\phi}(n)=(p-1)(q-1)=n+1-(p+q)$ and then using a reverse function of $d=e^{-1}(mod{\phi}(n))$. Integer factorization from n to p,q is most widely used to produce ${\phi}(n)$, which has been regarded as mathematically hard. Among various integer factorization methods, the most popularly used is the congruence of squares of $a^2{\equiv}b^2(mod\;n)$, a=(p+q)/2,b=(q-p)/2 which is more commonly used then n/p=q trial division. Despite the availability of a number of congruence of scares methods, however, many of the RSA numbers remain unfactorable. This paper thus proposes an algorithm that directly and immediately obtains ${\phi}(n)$. The proposed algorithm computes $2^k{\beta}_j{\equiv}2^i(mod\;n)$, $0{\leq}i{\leq}{\gamma}-1$, $k=1,2,{\ldots}$ or $2^k{\beta}_j=2{\beta}_j$ for $2^j{\equiv}{\beta}_j(mod\;n)$, $2^{{\gamma}-1}$ < n < $2^{\gamma}$, $j={\gamma}-1,{\gamma},{\gamma}+1$ to obtain the solution. It has been found to be capable of finding an arbitrarily located ${\phi}(n)$ in a range of $n-10{\lfloor}{\sqrt{n}}{\rfloor}$ < ${\phi}(n){\leq}n-2{\lfloor}{\sqrt{n}}{\rfloor}$ much more efficiently than conventional algorithms.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.318-323
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• 2000

The intercalated compounds of alkylsulfonates into hydrated zinc were synthesized. From the high temperature powder X-ray diffraction (HTXRD), FT-IR, and molecular size, the temperature dependence of orientation for the intercalated alkylsulfonates were determined. In the temperatures range 1, alkylsulfonates were intercalated into hexa aqua zinc layer with the bilayer structure of $32.9^{\circ}$angle for ${Zn(H_2O_4]^{2+}[C_nH_{2n+1}SO_3]_2\;^-$. In the temperatures range 2, alkylsulfonates were intercalated into tetra aqua zinc layer with the bilayer structure of $55.2^{\circ}$angle for ${Zn(C_nH_{2n+1}SO_3)_2$. In the temperatures range 3, alkylsulfonates were directly bonded to zinc ion with the bilayer structure of $76.5^{\circ}$angle for ${Zn(C_nH_{2n+1}SO_3)_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.249-249
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• 1999

GaN과 같은 III-nitride 반도체 관한 식각 기술의 연구는 blue-emitting laser diode(LD)를 위한 경면(mirror facet)의 형성뿐만아니라 새로운 display 용도의 light emitting diodes (LED), 고온에서 작동되는 광전소자 제조 등에도 그 중요성이 증대되고 있다. 최근에는 III-nitride 물질의 높은 식각속도와 미려하고 수직한 식각형상을 이루기 위하여 ECR(Electron Cyclotron Resonance)이나 ICP(Inductively Coupled Plasma)와 같은 고밀도 플라즈마 식각과 CAIBE(Chemically assisted ion beam etching)를 이용한 연구가 진행되고 있다. 현재 제조되어 지고 있는 LED 및 LD와 같은 광소자의 구조의 대부분은 p-GaN/AlGaN/InGaN(Q.W)/AlGaN/n-GaN 와 같은 여러 층의 형태로 이루어져 있다. 이중 InGaN는 광소자나 전자소자의 특성에 영향을 주는 가장 중요한 부분으로써 현재까지 보고된 식각연구는 undoped GaN에 대부분 집중되고 있고 이에 비해 소자 특성에 핵심을 이루는 InGaN의 식각특성에 관한 연구는 미흡한 상황이다. 본 연구에서는 고밀도 플라즈마원인 ICP 장비를 이용하여 InGaN를 식각하였고, 식각에는 Cl2/CH4, Cl2/Ar 플라즈마를 사용하였다. InGaN의 식각특성에 영향을 미치는 플라즈마의 특성을 관찰하기 위하여 quadrupole mass spectrometry(QMS)와 optical emission spectroscopy(PES)를 사용하였다. 기판 온도는 5$0^{\circ}C$, 공정 압력은 5,Torr에서 30mTorr로 변화시켰고 inductive power는 200~800watt, bias voltage는 0~-200voltage로 변화시켰으며 식각마스크로는 SiO2를 patterning 하여 사용하였다. n-GaN, p-GaN 층 이외에 광소자 제조시 필수적인 InGaN 층을 100% Cl2로 식각한 경우에 InGaN의 식각속도가 GaN에 비해 매우 낮은 식각속도를 보였다. Cl2 gas에 소량의 CH4나 Ar gas를 첨가하는 경우와 공정압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%Ar 플라즈마에서 공정 압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%CHF3 와 Cl2/10%Ar 플라즈마에서 공정압력을 15mTorr로 감소시키는 경우 InGaN과 GaNrks의 선택적인 식각이 가능하였다. InGaN의 식각속도는 Cl2/Ar 플라즈마의 이온에 의한 Cl2/CHF3(CH4) 플라즈마에서의 CHx radical 형성에 의하여 증가하는 것으로 사료되어 진다.

• Proceedings of the Korean Information Science Society Conference
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• 2004.10a
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• pp.58-60
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• 2004

최근에 하이퍼큐브의 망비용을 개선한 하이퍼-스타 연결망이 제안되었다. 본 논문에서는 하이퍼-스타 연결망 HS(2n, n)의 container를 이용하여 k-wide diameter가 dist(u, v)＋4이하임과 HS(2n, n)의 고장지름이 D(HS(2n, n))＋2 이하임을 보인다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.412-418
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• 2000

In this paper, we will propose that HCN(n,n) gets Hamiltonian Cycles and analyze embedding among HCN(n,n) and UFN(n,n), and HFN(n,n) and In-hypercube. Further, we will prove that HCN(n,n) can be embedded into HFN(n,n) with dilation 3 and the cost for HFN(n,n) to be embedded into HCN(n,n) will be O(n), and HW(n,n) can be embedded into 2n-hypercube with dilation 3 and the cost for In-hypercube to be embedded into HFN(n,n) will be O(n).