• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.97-100
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• 2018

$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.8
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• pp.6-14
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• 2006

This paper is a study about a proper method of plasma generation to cleaning method and a high frequency power equipment circuit to generation of plasma that used cleaning of chamber for TFT-LCD PECVD. The high density plasma required for cleaning causes a possibility of high density plasma more than $1{\times}10^{11}[EA/cm^3]$. It apply a ferrite core of ferromagnetic body to a existing ICP form. In case of power transfer equipment on 400[kHz] high frequency to generation of plasma it makes certain a stable switching operation in condition of plasma through using a inverter form for general purpose HB. And it demonstrates the performance of power transfer equipment using methods of measurement which use a transformer of series combination the density of plasma and the rate of dissolution of $NF_3$ in condition of $A_r\;and\;NF_3$.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4449-4459
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• 2022

In this study, an NF₃ plasma etching reaction with a cobalt oxide (Co₃O₄) films grown on the surface of inorganic compounds using granite was investigated. Experimental results showed that the etching rate can be up to 1.604 mm/min at 380 ℃ under 150 W of RF power. EDS and XPS analysis showed that main reaction product is CoF₂, which is generated by fluorination in NF₃ plasma. The etching rate of cobalt oxide films grown on inorganic compounds in this study was affected by surface roughness and etch selectivity. This study demonstrates that the plasma surface decontamination can effectively and efficiently remove contaminated nuclides such as cobalt attached to aggregate in concrete generated when decommissioning of nuclear power plants.

• Clean Technology
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• v.19 no.2
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• pp.113-120
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• 2013

The treatment of chemically stable perflourocompounds (PFCs) requires a large amount of energy. An energy efficient arc plasma system has been developed to overcome such disadvantage. $CF_4$, $SF_6$ and $NF_3$ were injected into the plasma torch directly, and net plasma power was estimated from the measurement of thermal efficiency of the system. Effects of net plasma power, waste gas flow rate and additive gases on the destruction and removal efficiency (DRE) of PFCs were examined. The calculation of thermodynamic equilibrium composition was also conducted to compare with experimental results. The average thermal efficiency was ranged from 60 to 66% with increasing waste gas flow rate, while DRE of PFCs was decreased with increasing gas flow rate. On the other hand, DRE of each PFCs was increased with the increasing input power. Maximum DREs of $CF_4$, $SF_6$ and $NF_3$ were 4%, 15% and 90%, respectively, without reaction gas at the fixed input power and waste gas flow rate of 3 kW and 70 L/min. A rapid increase of DRE was found using hydrogen or oxygen additional gases. Hydrogen was more effective than oxygen to decompose PFCs and to control by-products. The major by-product in the arc plasma process with hydrogen was hydrofluoric acid that is easy to be removed by a wet scrubber. DREs of $CF_4$, $SF_6$ and $NF_3$ were 25%, 39% and 99%, respectively, using hydrogen additional gas at the waste gas flow rate of 100 L/min and the input power of 3 kW.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.51-52
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• 2013

본 논문에서는 박막형 태양전지 및 LCD 제조공정에서 증착 공정 후 챔버 내부에 쌓이는 Si(실리콘)을 화학적으로 세정하기 위한 F(불소) RADICAL을 공급하는 원격 고밀도 플라즈마를 발생시키기 위한 고출력 Generator에 대해 소개하고자 한다. 개발되어진 Generator는 입력 직류전원을 공유하여 7kW급 단일 Power Amp Module의 상호결합 및 전력분담에 대한 편차 극복을 위한 기술과 고조파 저감비가 우수한 대전력 필터를 구현하였고, 크기 및 부피의 축소를 위하여 필터의 Q Factor의 극대화 기술이 적용되어졌다. 개발된 400kHz 30kW Generator는 NF3 60리터의 대용량 Remote Plasma Source의 리액터를 구동시킬 수 있으며, 38kW급 DC Link, 7kW급 Power Amp module, LC 필터, Controller로 구성되어 진다. 개발된 장치는 실제 플라즈마 공정에서 시험 평가한 결과를 통해 검증할 수 있었다.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.45-50
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• 2020

We investigated the Si_1-xGe_x surface properties when dry cleaning the films using NF₃ / H₂O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H₂O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H₂O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.220-225
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• 2004

Four different Fluorine-based gases ($SF_6/,NF_3, PF_5,\; and \; BF_3$) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to ~8$\mu\textrm{m}$/min were achieved with pure $SF_6$ discharges at high source power (1500 W) and pressure (35 mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order $BF_3$ < $NF_3$< $PF_5$ < $SF_6$. This is in good correlation with the average bond energies of the gases, except for $NF_3$, which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiently dissociated $NF_3$, but the etched Si surface morphologies were significantly worse with this gas than with the other 3 gases.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.156-156
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• 2001

• Clean Technology
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• v.17 no.3
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• pp.250-258
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• 2011

Thermal plasma has been presented for the decomposition of perfluorocompounds (PFCs) which are extensively used in the semiconductor manufacturing and display industry. We developed pilot-scale equipment to investigate the large scale treatment of PFCs and called it a "thermal plasma scrubber". PFCs such as $CF_4$, $C_2F_6$, $SF_6$, and $NF_3$ used in experiments were diluted with $N_2$. There were two different types of experiment setup related to the water spray direction inside the thermal plasma scrubber. The first type was that the water was sprayed directly into the gas outlet located at the exit of the reaction section. The second type was that the water was sprayed on the wall of the quenching section. More effective decomposition took place when the water was sprayed on the quenching section wall. For $C_2F_6$, $SF_6$, and $NF_3$ the maximum destruction and removal efficiency was nearly 100%, and for $CF_4$ was up to 93%.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.26-31
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• 2023

We investigated the impact of NF₃ / H₂O remote plasma dry cleaning conditions on the SiO₂ etching rate at different preparation states during the fabrication of ultra-large-scale integration (ULSI) devices. This included consideration of factors like Si crystal orientation prior to oxidation and three-dimensional structures. The dry cleaning process were carried out varying the parameters of pressure, NF₃ flow rate, and H₂O flow rate. We found that the pressure had an effective role in controlling anisotropic etching when a thin SiO₂ layer was situated between Si₃N₄ and Si layers in a multilayer trench structure. Based on these observations, we would like to provide further guidelines for implementing the dry cleaning process in the fabrication of semiconductor devices having 3D structures.