Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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SiGe Surface Changes During Dry Cleaning with NF3 / H2O Plasma

NF3 / H2O 원거리 플라즈마 건식 세정에 의한 SiGe 표면 특성 변화

  • Park, Seran (Department of Materials Science and Engineering, Yonsei University) ;
  • Oh, Hoon-Jung (BIT Micro Fab Research Center, Yonsei University) ;
  • Kim, Kyu-Dong (ACN Co. Ltd) ;
  • Ko, Dae-Hong (Department of Materials Science and Engineering, Yonsei University)
  • 박세란 (연세대학교 신소재공학과) ;
  • 오훈정 (연세대학교 비아이티 마이크로 팹 연구소) ;
  • 김규동 ((주) ACN) ;
  • 고대홍 (연세대학교 신소재공학과)
  • Received : 2020.06.03
  • Accepted : 2020.06.18
  • Published : 2020.06.30
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Abstract

We investigated the Si1-xGex surface properties when dry cleaning the films using NF3 / H2O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H2O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H2O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.

Keywords

References

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