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SiGe Surface Changes During Dry Cleaning with NF3 / H2O Plasma  

Park, Seran (Department of Materials Science and Engineering, Yonsei University)
Oh, Hoon-Jung (BIT Micro Fab Research Center, Yonsei University)
Kim, Kyu-Dong (ACN Co. Ltd)
Ko, Dae-Hong (Department of Materials Science and Engineering, Yonsei University)
Publication Information
Journal of the Semiconductor & Display Technology / v.19, no.2, 2020 , pp. 45-50 More about this Journal
Abstract
We investigated the Si1-xGex surface properties when dry cleaning the films using NF3 / H2O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H2O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H2O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.
Keywords
SiGe; Dry Cleaning; Plasma; Remote Plasma; $NF_3/H_2O$ Dry Cleaning; SiGe Cleaning;
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Times Cited By KSCI : 2  (Citation Analysis)
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