• 한국표면공학회지
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• 제49권1호
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• pp.75-80
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• 2016

$In_2O_3$ nanowires were coated with $Co_3O_4$ nanoparticles to investigate the improvement of ethanol gas sensing performance compared with as-synthesized $In_2O_3$ nanowires. Scanning electron microscopy showed that the nanowires synthesized by VLS mechanism had diameters and lengths of approximately 50-100 nm and a few micrometers, respectively. $Co_3O_4$ nanoparticles produced by hydrothermal method was in the size range of a few to a few tens nm. As-synthesized and $Co_3O_4$ nanoparticles coated $In_2O_3$ nanowires sensors exhibited responses of 1.96% and 4.57%, respectively for the ethanol gas concentration of 200 ppm at $200^{\circ}C$. The underlying mechanism for the improved responses of $Co_3O_4$ nanoparticles coated $In_2O_3$ nanowires sensors is discussed.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.59-63
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• 2012

Ga2O3-core/CdO-shell nanowires were synthesized by a two step process comprising thermal evaporation of GaN powders and sputter-deposition of CdO. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses revealed that the cores and the shells of the annealed coaxial nanowires were single crystal of monoclinic Ga2O3 and FCC CdO, respectively. As-synthesized Ga2O3 nanowires showed a broad emission band at approximately 460 nm in the blue region. The blue emission intensity of the Ga2O3 nanowires was slightly decreased by CdO coating, but it was significantly increased by subsequent thermal annealing in a reducing atmosphere. The major emission peak was also shifted from ~500 nm by annealing in a reducing atmosphere, which is attributed to the increases in the Cd interstitial and O vacancy concentrations in the cores.

• 한국표면공학회지
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• 제48권6호
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• pp.303-308
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• 2015

Pd-functionalized ${\beta}-Bi_2O_3$ nanowires are synthesized by thermal evaporation of Bi powder using VLS mechanism followed by Pd coating and annealing. In this study, sensing properties of Pd-functionalized ${\beta}-Bi_2O_3$ nanowires sensor to selected concentrations of $NO_2$ gas were examined. Scanning electron microscopy showed that the nanowires with diameters in a range of 100 - 200 nm and lengths of up to a few tens of micrometers. Transmission electron microscopy and X-ray diffraction confirmed that the products corresponded to the nanowires of ${\beta}-Bi_2O_3$ crystals and Pd nanoparticles. Pd-functionalized ${\beta}-Bi_2O_3$ nanowires sensor showed an enhanced sensing performance to $NO_2$ gas compared to as-synthesized ${\beta}-Bi_2O_3$ nanowires sensor. As synthesized and Pd-functionalized ${\beta}-Bi_2O_3$ nanowire sensors showed responses of 178% - 338% and 196% - 535% at $300^{\circ}C$, respectively, to 0.05 - 2 ppm $NO_2$. In addition, the underlying mechanism of the enhancement of the sensing properties of ${\beta}-Bi_2O_3$ nanowires by Pd-functionalization is discussed.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.113-119
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• 2004

Structural and optical properties of as-synthesized, Ga$_2$O$_3$-coated, and Al$_2$O$_3$-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH$_3$ atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2nm-thick Ga$_2$O$_3$ layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al$_2$O$_3$ by atomic layer deposition technique. Our study suggests that the Al$_2$O$_3$-coating passivates some of surface states in the GaN nanowires.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.156-159
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• 2013

The electrical properties of ZnO nanowire field effect transistors (FETs) have been investigated depending on various diameters of nanowires. The ZnO nanowires were synthesized with an Au catalyst on c-plane $Al_2O_3$ substrates using hot-walled pulsed laser deposition (HW-PLD). The nanowire FETs are fabricated by conventional photo-lithography. The diameter of ZnO nanowires is simply controlled by changing the thickness of the Au catalyst metal, which is confirmed by FE-SEM. It has been clearly observed that the ZnO nanowires showed different diameters simply depending on the thickness of the Au catalyst. As the diameter of ZnO nanowires increased, the threshold voltage of ZnO nanowires shifted to the negative direction systematically. The results are attributed to the difference of conductive layer in the nanowires with different diameters of nanowires, which is simply controlled by changing the catalyst thickness. The results show the possibility for the simple method of the fabrication of nanowire logic circuits using enhanced and depleted mode.

• 한국표면공학회지
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• 제48권5호
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• pp.238-244
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• 2015

$TiO_2$ nanowires were synthesized by hydrothermal method for the application to ethanol gas sensor. $TiO_2$ nanowires were decorated with Au nanoparticles to improve the sensitivity to ethanol gas. Scanning electron microscopy and Transmission electron microscopy revealed that the synthesized nanowires had diameters and lengths of approximately 100 - 200 nm and a few micrometers, respectively. Size of the Au nanoparticles decorated on the $TiO_2$ nanowires was observed to be in the range of 10 - 20 nm. X-ray diffraction confirmed that the decorated nanowires were composed of anatase-, rutile-$TiO_2$, and Au. The sensitivities of $TiO_2$ nanowires sensors decorated with Au were approximately 1.1 - 3.65 times as high as those of as-synthesized $TiO_2$ sensors for the ethanol concentration of 5 - 100 ppm at $200^{\circ}C$. The mechanism of the improved ethanol gas sensing of the $TiO_2$ nanowires decorated with Au nanoparticles is discussed.

• ETRI Journal
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• 제28권6호
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• pp.787-789
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• 2006

In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-$Al_2O_3$ substrates. However, pre-growth annealing of the Au thin layer on c-$Al_2O_3$ resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.37-40
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• 2003

Amorphous $Al_2O_3$ nanotubes have been fabricated by utilizing the ZnO nanowires as template with wet etching method. ZnO nanowires synthesized by thermal evaporation are conformally coated with $Al_2O_3$ by atomic-layer deposition(ALD) method. The $Al_2O_3$-coated ZnO nanowires are of core-shell structure; ZnO core nanowires and $Al_2O_3$ shells. When the $ZnO/Al_2O_3$ core-shell structure is dipped in $H_3PO_4$ solution at $25^{\circ}C$ for a 6 min, the core ZnO materials are completely etched, and only $Al_2O_3$ nanotubes are remained. This nanotube fabrication is technically easier than others, and simply approachable. Transmission electron microscopy shows that the $Al_2O_3$ nanotubes have various thicknesses that can be controlled.

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.78-81
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• 2015

Pure ZnO and ZnO nanowires doped with 3 wt.% Ga (‘3GZO’) were grown by pulsed laser deposition in a furnace system. The doping of Ga in ZnO nanowires was analyzed by observing the optical and chemical properties of the doped nanowires. The diameter and length of nanowires were under 200 nm and several ${\mu}m$, respectively. Changes of significant resistance were observed and the sensitivities of ZnO and 3GZO nanowires were compared. The sensitivities of ZnO and 3GZO nanowire sensors measured at 300℃ for 1 ppm of ethanol gas were 97% and 48%, respectively.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권2호
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• pp.66-69
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• 2003

Various semiconductor nanowires such as GaN, GaP, InP, Si$_3$N$_4$, SiO$_2$/Si, and SiC were coated conformally with aluminum oxide (Al$_2$O$_3$) layers by atomic layer deposition (ALD) using trimethylaluminum (TMA) and distilled water ($H_2O$) at a temperature of 20$0^{\circ}C$. Transmission electron microscopy (TEM) revealed that A1203 cylindrical shells conformally coat the semiconductor nanowires. This study suggests that the ALD of $Al_2$O$_3$ on nanowires is a promising method for preparing cylindrical dielectric shells for coaxially gated nanowire field-effect transistors.