KIEE International Transactions on Electrophysics and Applications

The Korean Institute of Electrical Engineers (대한전기학회)
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Conformal $Al_2$O$_3$ Nanocoating of Semiconductor Nanowires by Atomic Layer Deposition

  • Published : 2003.04.01
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Abstract

Various semiconductor nanowires such as GaN, GaP, InP, Si$_3$N$_4$, SiO$_2$/Si, and SiC were coated conformally with aluminum oxide (Al$_2$O$_3$) layers by atomic layer deposition (ALD) using trimethylaluminum (TMA) and distilled water ($H_2O$) at a temperature of 20$0^{\circ}C$. Transmission electron microscopy (TEM) revealed that A1203 cylindrical shells conformally coat the semiconductor nanowires. This study suggests that the ALD of $Al_2$O$_3$ on nanowires is a promising method for preparing cylindrical dielectric shells for coaxially gated nanowire field-effect transistors.

Keywords

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